MARKING H2 SOT363 Search Results

smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors UMH2N dual digital transistors (NPN+NPN) SOT-363 FEATURES z Two DTC144E chips in a package z Mounting possible with SOT-363 automatic mounting machines z Transistor elements are independent,eliminating interference

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBCW69LT1G LBCW70LT1G 3 COLLECTOR 1 BASE 3 Featrues 2 EMITTER Pb-Free Package is Available. 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO

TRANSISTOR MARKING YB

Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj

MARKING H2 SOT363

Abstract: UMH2N marking h2
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMH2N Features • x x x • • • Halogen free available upon request by adding suffix "-HF" Two DTC144E chips in one package

marking h2

Abstract: UMH2N
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMH2N Features x x x • • • Two DTC144E chips in one package Mounting possible with SOT-363 automatic mounting machines.

SOT 363 marking CODE 68

Abstract: H9 sot 23 .22K 250 SOT363 marking code H9 DTA114EE marking 4 npn sot23 marking 52 sot-363 H11 sot-363 H9 MARKING CODE SOT23 SOT-363 marking h2
Contextual Info: MCC TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power DissipationPd mW Output Current Io(mA) Supply Voltage -VCC(V) DC Current Gain -Gi Output VoltageVo(V) Input R1(Ω) Input R2(Ω) Transistion Frequency -Ft(MHZ) Package Polarity

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# UMH2N Features • x x x • • • Halogen free available upon request by adding suffix "-HF" Two DTC144E chips in one package

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84BxxxLT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device SOT– 23 (TO–236AB) PLASTIC CONSTRUCTION

5bt1

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LUDZS*BT1G SERIES 200 mW SOD-323 Surface Mount 1 FEATURES ƽNon-wire bonding structure improves ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOD-323 ƽSilicon epitaxial planar

LBZX84B5V1LT1G

Abstract: sot353 marking e5 LBZX84B10LT1G SC 2630 LBZX84B18LT1G LBZX84B27LT1G A5 SC-89 LBZX84B16LT1G marking J2 sot-23 ZENER marking a5 sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G Series 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar

DTC143TE

Abstract: DTC144TSA
Contextual Info: TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power Dissipation Output Current Supply Voltage Pd mW Io(mA) VCC(V) DC Output Current Voltage Gain Input Input Transistion Frequency Package Polarity Marking Code Internal Diagram Gi Vo(V)

Contextual Info: MMBZ5221BTW~MMBZ5262BTW SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die Construction • 200mW Power Dissipation • Zener Voltages from 2.4~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

MARKING d5 SOT363

Abstract: marking code e5 sot363 SOT-363 Marking H2 marking K1 sot363 SOT-363 marking 05 sot363 marking K4 MMBZ5262BTW SOT 363 marking CODE m4 marking K5 sot363
Contextual Info: MMBZ5221BTW~MMBZ5262BTW SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die Construction • 200mW Power Dissipation • Zener Voltages from 2.4~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

PEMH15

Abstract: PEMD15 PUMB15 PUMH15 PEMB15 PUMD15 marking 5f sot363 PEMB1
Contextual Info: PEMH15; PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Rev. 03 — 11 February 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN resistor-equipped transistors. Table 1: Product overview Type number Package

MARKING 5F SOT363

Abstract: PEMH15 PEMD15 PUMB15 PUMH15 PEMB15 PUMD15 MARKING H2 SOT363
Contextual Info: PEMH15; PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Rev. 04 — 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN resistor-equipped transistors. Table 1. Product overview Type number Package

PUMB15

Abstract: PUMH15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification 2003 Oct 09 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PUMB15

Abstract: PUMH15 PUMD15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Oct 9 2004 Apr 14 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;

Contextual Info: DMG56403 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

MHC650

Abstract: MARKING H2 SOT363 PEMB1 PEMH1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMH1; PUMH1 NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Product specification Supersedes data of 2001 Oct 22 2003 Oct 08 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;

nxp make resistor

Abstract: MHC650 PUMD2 PEMB1 PEMH1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMH1; PUMH1 NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Product data sheet Supersedes data of 2001 Oct 22 2003 Oct 08 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ

micro-x marking code E1

Abstract: 0004E4 SOT 86 MARKING E4
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

PEMB1

Abstract: PEMH1
Contextual Info: PEMH1; PUMH1 NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k Rev. 5 — 2 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.