MARKING GVT Search Results

siemens sirius 3r

Abstract: Sprecher Schuh CT 3-12 plotter ip-220 Transformer zkb Sirius 3SB3 sti es 1682 IP220 Legrand symbol electric manual legrand
Contextual Info: Terminal Markers 4 Terminal Markers Almost any marking task involving any type of terminal block can be tackled using the Weidmüller range of terminal markers. Whether a clamping point needs multicharacter marking, ready-to-use markers with standard or custom printing, white or

RF50C

Abstract: RF16C 12w marking MARKING EU RF25 RF50 T26A T52A
Contextual Info: DPBUJOTVMBUFE
GVTJOH
SFTJTUPST EU /&8 GFBUVSFT s Functions as a resistor in normal condition s Quick fusing protects circuit from excessive overload at an abnormal time s Flame-retardant coating with non-flammable paint recognized by UL94 V-0 s Marking: Blue body color with color code marking

Contextual Info: Surface Mount Fuses Thin Film > 0402 Size > Very Fast-Acting > 435 Series Pb RoHS 435 Series Fuse ® Description
GVTFT
5IFJS
VMUSBTNBMM
TJ[F

TJ[F
NBLFT
UIFN
JEFBM
GPS

TL 435

Contextual Info: Surface Mount Fuses Thin Film > 0402 Size > Very Fast-Acting > 435 Series Pb 435 Series Fuse ® Description
GVTFT
5IFJS
VMUSBTNBMM
TJ[F

TJ[F
NBLFT
UIFN
JEFBM
GPS

marking code TS

Abstract: TL 435 marking CODE 001 MARKING CODE TL marking code 4A
Contextual Info: Surface Mount Fuses Thin Film > 0402 Size > Very Fast-Acting > 435 Series 435 Series Fuse Description
GVTFT
5IFJS
VMUSBTNBMM
TJ[F

TJ[F
NBLFT
UIFN
JEFBM
GPS

GVT71128B32

Abstract: GALVANTECH marking adv
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT71128B32 128K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 128K x 32 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family

Contextual Info: Surface Mount Fuses NANO2 > 250V > Time Lag > 443 Series 443 Series Fuse ® Description

Contextual Info: Surface Mount Fuses NANO2 > 250V > Time Lag > 443 Series 443 Series Fuse Description

Contextual Info: Surface Mount Fuses NANO2 > 250V > Time Lag > 443 Series 443 Series Fuse Description

Q65111A3112

Contextual Info: MULTILED Data Sheet Version 1.0 LRTB GVTG Das Bauteil ist speziell für den Einsatz in Vollfarb-Videoleinwänden entwickelt worden. Die 6-lead Technologie läßt eine unahängige Ansteuerung aller Chips zu und bietet dadurch eine additive Farbmischung. This device is especially designed for full color

aa11

Abstract: marking A00
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT71512D36 512K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 512K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

GVT73512A8

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT7232A8

Contextual Info: GALVANTECH, INC. GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM ASYNCHRONOUS SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT7232A8

Abstract: GALVANTECH
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT72028A4

Abstract: GVT72028A4J-10L
Contextual Info: GVT72028A4 TRADITIONAL PINOUT 256K X 4 GALVANTECH, INC. ASYNCHRONOUS SRAM 256K x 4 SRAM WITH SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • The GVT72028A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,

GVT72256A4J-10L

Abstract: 32-pin vd
Contextual Info: GALVANTECH, INC. GVT72256A4 REVOLUTIONARY PINOUT 256K X 4 ASYNCHRONOUS SRAM 256K x 4 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT72256A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,

GVT72128A9J-10L

Contextual Info: PRELIMINARY GALVANTECH, INC. GVT72128A9 REVOLUTIONARY PINOUT 128K X 9 ASYNCHRONOUS SRAM 128K x 9 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT72128A9 is organized as a 131,072 x 9 SRAM

GVT72512A8

Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 ASYNCHRONOUS SRAM 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM

GVT72512A8

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT73128A8

Abstract: 73128A8
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM

GVT73128A8

Contextual Info: GALVANTECH, INC. GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 ASYNCHRONOUS SRAM 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM

GVT72128A8

Abstract: GALVANTECH
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72128A8 is organized as a 131,072 x 8 SRAM

GALVANTECH

Abstract: GVT72024A8
Contextual Info: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT72024A8

Abstract: Galvantech
Contextual Info: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,