MARKING GFS Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

LBSS123LT1G

Abstract: LBSS123LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

intersil DATE CODE MARKING

Contextual Info: U401/SST401 Series Ordering and Part Marking Information 3/22/11 SUBJECT: U401/SST401 Series Ordering and Part Marking Information The U401/SST401 Series Dual N-Channel JFET Amplifiers are offered in a TO-71, 6 lead package and includes the following part numbers: U401, U402, U403, U404, U405, U406

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Q62702-F1372

Contextual Info: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

STK730FC

Abstract: KST-H014-000 STK730 AUK auk stk730
Contextual Info: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730

STK730F

Abstract: KST-H037-000
Contextual Info: STK730F . Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. STK730F Marking STK730 Outline Dimensions

2N4416A

Contextual Info: 2N4416 2N4416A Central TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber

smcj15a

Abstract: 710 gee marking GFQ marking code GDD SMCJ8.5A 218 GFM 218 Gex GEX 610
Contextual Info: 3DT ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Type Modified "J" Bend Lead Device Marking Code Breakdown Voltage (Volts) (Note 1) (MIN / MAX) SMCJ5.0 SMCJ5.0A SMCJ6.0 SMCJ6.0A SMCJ6.5 SMCJ6.5A SMCJ7.0 SMCJ7.0A SMCJ7.5 SMCJ7.5A SMCJ8.0

2n4416 transistor

Abstract: 2N4416A TM2N4416 300300 5007 5MA1 2N4416 "N-Channel JFET"
Contextual Info: 2N4416 2N4416A Central TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber

sot143 sot343

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

BF2040

Abstract: BF2040R BF2040W sot143 sot343
Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

2N7002ESPT

Abstract: 2N7002ES 2N70 pK1 TRANSISTOR ISS101
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002ESPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.300 Ampere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 MARKING .055 1.40 .047 (1.20)

p 1S marking SOT143

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM1273PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE MARKING .066 1.70

BF2040W

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

mosfet marking code gg

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

Contextual Info: STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking STK630F STK630 Outline Dimensions

STK630

Contextual Info: STK630FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA Max. @ VDS=200V. Low RDS(ON) : 0.30Ω(Typ.) Ordering Information Type NO. Marking

BF2040

Abstract: BF2040R BF2040W 1V66
Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

STK730

Abstract: STK730 AUK auk stk730
Contextual Info: STK730F . Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=400V. • Low RDS(ON) : 0.7Ω(Typ.) Ordering Information Type NO. STK730F Marking STK730 Outline Dimensions