MARKING G5S Search Results

MARKING G5S Result Highlights (5)

Part	Manufacturer	Description	Download
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)	PDF
MG80C186-10/BZA	Rochester Electronics LLC	80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA)	PDF
54ACT244/B2A	Rochester Electronics LLC	54ACT244/B2A - Dual marked (5962-8776001B2A)	PDF
ICM7555MTV/883	Rochester Electronics LLC	ICM7555MTV/883 - Dual marked (5962-8950303GA)	PDF
MQ80186-8/BYC	Rochester Electronics LLC	80186 - Microprocessor, 16-Bit - Dual marked (8501001YC)	PDF

MARKING G5S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING 68W SOT-23 Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06	Original	25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23	PDF
transistor Bc 540 Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89 Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W	Original	0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89	PDF
transistor C639 Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W	Original	3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor	PDF
transistor A1267 Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561 Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration	Original	3-04W 3-05W VSO05561 3-06W Q62702-A1261 OT-323 Q62702-A1267 transistor A1267 A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561	PDF
Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration	OCR Scan	3-04W 3-05W 3-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 OT-323	PDF
Pin diode G4S Abstract: BAR63 BAR63-05 A2 SOT23 BAR63-06 BAR63-04 c2 sot23 Contextual Info: BAR63. Silicon PIN Diodes 3 PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance 2 For frequencies up to 3 GHz 1 BAR63-04 BAR63-05 BAR63-06 3 3 3 1 2 1 2 EHA07005 1 VPS05161 2 EHA07006 EHA07004 Type Marking	Original	BAR63. BAR63-04 BAR63-05 BAR63-06 VPS05161 EHA07005 EHA07006 EHA07004 Pin diode G4S BAR63 BAR63-05 A2 SOT23 BAR63-06 BAR63-04 c2 sot23	PDF
Contextual Info: BAR 63. Silicon PIN Diodes 3 PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance 2 For frequencies up to 3 GHz 1 BAR 63-04 BAR 63-05 BAR 63-06 3 3 3 1 2 VPS05161 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking	Original	VPS05161 EHA07005 EHA07006 EHA07004 OT-23 EHD07138 100MHz EHB07147	PDF
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes _ FEATURES_ Case Stvle GBU ♦ Plastic package has Underwriters Laboratory Flammability	OCR Scan	G5SBA20 G5SBA60 E54214	PDF
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes _ FEATURES_ Case Stvle GBU ♦ Plastic package has Underwriters Laboratory Flammability	OCR Scan	G5SBA20 G5SBA60 E54214 prefe/24/99	PDF
g5sba60 Contextual Info: G5SBA20 and G5SBA60 Glass Passivated Single-Phase Bridge Rectifier ct Case Type GBU du o r P New 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER Features 9o TYP. 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8)	Original	G5SBA20 G5SBA60 125OC 50mVp-p g5sba60	PDF
Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Reverse Voltage 200 and 600 V Forward Current 6.0 A Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)	Original	G5SBA20 G5SBA60 E54214 50mVp-p 12-May-04	PDF
G5SBA20 Abstract: G5SBA60 Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes FEATURES Case Style GBU 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)	Original	G5SBA20 G5SBA60 300ms 50mVp-p G5SBA60	PDF
Contextual Info: G5SBA20 and G5SBA60 Glass Passivated Single-Phase Bridge Rectifier ct Case Type GBU du o r P New 0.020 R TYP. 0.125 (3.2) x 45o CHAMFER 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) Reverse Voltage 200 and 600 V Forward Current 6.0 A 0.140 (3.56) 0.130 (3.30)	Original	G5SBA20 G5SBA60 E54214 125OC 50mVp-p	PDF
Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP.	Original	G5SBA20 G5SBA60 E54214 50mVp-p 08-Jul-02	PDF

G5SBA20 Abstract: G5SBA60 Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP. 0.160 (4.1)	Original	G5SBA20 G5SBA60 E54214 50mVp-p 07-Oct-02 G5SBA60	PDF
Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP. 0.160 (4.1)	Original	G5SBA20 G5SBA60 E54214 str100 50mVp-p 21-Feb-03	PDF
Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFE R 0.160 (4.1) 0.140 (3.5)	Original	G5SBA20 G5SBA60 E54214 dielec100 50mVp-p 21-Feb-03	PDF
marking G5s Abstract: BAR63-02L BAR63-02V Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05	Original	BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 marking G5s BAR63-02L BAR63-02V	PDF
Pin diode G4S Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101	Original	BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L Pin diode G4S BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W	PDF
BAR63-02V Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05	Original	BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L BAR63-02V	PDF
BAR63-05 Abstract: BAR63-02L BAR63-02V Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05	Original	BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02L BAR63-02V	PDF
BAR63-02V Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)	Original	BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-02L* BAR63-02V BAR63-02V	PDF
BAR63-02W Abstract: BAR63-02L BAR63-02V Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)	Original	BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02W BAR63-02L BAR63-02V	PDF
Pin diode G4S Abstract: marking g4s Q62702-A1261 Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>	OCR Scan	3-04W 3-05W 3-06W eHA0718> 3-04W 3-05W Q62702-A1261 Q62702-A1267 Q62702-A1268 Pin diode G4S marking g4s	PDF

MARKING G5S Search Results

MARKING G5S Result Highlights (5)

MARKING G5S Datasheets Context Search

MARKING 68W SOT-23

transistor Bc 540

transistor C639

transistor A1267

Pin diode G4S

g5sba60

G5SBA20

G5SBA20

marking G5s

Pin diode G4S

BAR63-02V

BAR63-05

BAR63-02V

BAR63-02W

Pin diode G4S