MARKING G5S Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

transistor A1267

Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration

Pin diode G4S

Abstract: BAR63 BAR63-05 A2 SOT23 BAR63-06 BAR63-04 c2 sot23
Contextual Info: BAR63. Silicon PIN Diodes 3
PIN diode for high speed switching of RF signals
Low forward resistance
Very low capacitance 2
For frequencies up to 3 GHz 1 BAR63-04 BAR63-05 BAR63-06 3 3 3 1 2 1 2 EHA07005 1 VPS05161 2 EHA07006 EHA07004 Type Marking

Contextual Info: BAR 63. Silicon PIN Diodes 3
PIN diode for high speed switching of RF signals
Low forward resistance
Very low capacitance 2
For frequencies up to 3 GHz 1 BAR 63-04 BAR 63-05 BAR 63-06 3 3 3 1 2 VPS05161 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes _ FEATURES_ Case Stvle GBU ♦ Plastic package has Underwriters Laboratory Flammability

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes _ FEATURES_ Case Stvle GBU ♦ Plastic package has Underwriters Laboratory Flammability

g5sba60

Contextual Info: G5SBA20 and G5SBA60 Glass Passivated Single-Phase Bridge Rectifier ct Case Type GBU du o r P New 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER Features 9o TYP. 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8)

Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Reverse Voltage 200 and 600 V Forward Current 6.0 A Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)

G5SBA20

Abstract: G5SBA60
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G5SBA20 AND G5SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 6.0 Amperes FEATURES Case Style GBU 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)

Contextual Info: G5SBA20 and G5SBA60 Glass Passivated Single-Phase Bridge Rectifier ct Case Type GBU du o r P New 0.020 R TYP. 0.125 (3.2) x 45o CHAMFER 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) Reverse Voltage 200 and 600 V Forward Current 6.0 A 0.140 (3.56) 0.130 (3.30)

Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP.

G5SBA20

Abstract: G5SBA60
Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP. 0.160 (4.1)

Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFER 9o TYP. 0.160 (4.1)

Contextual Info: G5SBA20 and G5SBA60 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBU Features 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFE R 0.160 (4.1) 0.140 (3.5)

marking G5s

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

Pin diode G4S

Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

BAR63-02V

Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-05

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-02V

Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

BAR63-02W

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

Pin diode G4S

Abstract: marking g4s Q62702-A1261
Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>