MARKING G3 TRANSISTOR Search Results

Contextual Info: DMC364A2 Tentative Total pages page DMC364A2 Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuit Marking Symbol : G3 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C Parameter

sony lcd tv circuit diagram free

Abstract: 2412 nec marking G3 nec projector lamp LCX021AM pcg-6
Contextual Info: LCX021AM 4.1cm 1.6-inch LCD Panel (with microlens) For the availability of this product, please contact the sales office. Description The LCX021AM is a 4.1cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving

2N5401

Contextual Info: 2N5401 PNP GENERAL PURPOSE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and

2N5551-NPN

Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C

Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features • · · · · High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C Mechanical Data · · ·

2N5401

Abstract: of pnp transistor 2n5401
Contextual Info: 2N5401 PNP GENERAL PURPOSE TRANSISTOR Features • · · · High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and Switch Applications E

transistor 2N5401

Abstract: 2N5401 marking xa 2N5401 vishay DS11205
Contextual Info: 2N5401 PNP GENERAL PURPOSE TRANSISTOR Features High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and Switch Applications hH TO-92 Mechanical Data

MARKING G3 Transistor

Abstract: Transistor TO-92 2N5551 2N5401 2N5551
Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic

PN2907A

Contextual Info: PN2907A PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available

2PN2907A

Abstract: PN2907A
Contextual Info: PN2907A PNP SMALL SIGNAL TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN2222A

DFN1310H4-6

Abstract: DMN2005DLP4K
Contextual Info: DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.

CR25

Abstract: LCX020BK MAC16
Contextual Info: LCX020BK 1.8cm 0.7-inch Color LCD Panel For the availability of this product, please contact the sales office. Description The LCX020BK is a 1.8cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving

572H

Abstract: CR25 LCX020BK MAC16 624h SONY lcd cross reference V90-25
Contextual Info: LCX020BK 1.8cm 0.7-inch Color LCD Panel Description The LCX020BK is a 1.8cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation.

DMN2005DLP4K-7

Contextual Info: DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.

Contextual Info: Transistors IC SMD Type Emitter common Dual Digital Transistors FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage

SC74A

Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

Contextual Info: BC847CDLP 45V DUAL NPN SMALL SIGNAL TRANSISTOR Features Mechanical Data • BVCEO > 45V  Case: X2-DFN1310-6  Low profile 0.4mm high package for thin applications  Nominal package height: 0.4mm  Ultra-Small Surface Mount Package  Case Material: Molded Plastic, “Green” Molding Compound.

E4 marking

Contextual Info: DMC2004LPK Green COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS th < 1V • • Low Input Capacitance • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020C

SC107B

Abstract: marking G3 G3 sot-353
Contextual Info: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW (2) (1) (4) (1) (4) (2) (3) (5) EMG3 (SC-107BB) SMT5 UMG3N SOT-353 (SC-88A)

Contextual Info: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW (2) (1) (4) (1) (4) (2) (3) (5) EMG3 (SC-107BB) SMT5 UMG3N SOT-353 (SC-88A)

Contextual Info: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 4.7kW IC(MAX.) R1 EMT5 UMT5 (3) (5) (1) (4) (2) (5) EMG3 (SC-107BB) with complete isolation to allow negative biasing

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes UMG3N SOT-353 General purpose transistors dual transistors FEATURES z Two DTC143T chips in a package z Mounting possible with SOT-353 automatic mounting machines. z Transistor elements are independent, eliminating interference.

MARKING CODE G3

Abstract: AF MARKING CODE marking AF marking AF SOT marking G3
Contextual Info: MMBTBC337-40 NPN Silicon Epitaxial Planar Transistor for switching, AF driver and amplifier application, especially suited for automatic insertion in thick and thin-film circuits. Marking Code: “G3” SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

Transistor MPSA13

Abstract: mpsa14
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,