MARKING G3 TRANSISTOR Search Results

2N5401

Contextual Info: 2N5401 PNP GENERAL PURPOSE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and

2N5551-NPN

Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C

PN2907A

Contextual Info: PN2907A PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available

CR25

Abstract: LCX020BK MAC16
Contextual Info: LCX020BK 1.8cm 0.7-inch Color LCD Panel For the availability of this product, please contact the sales office. Description The LCX020BK is a 1.8cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving

DMN2005DLP4K-7

Contextual Info: DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.

Contextual Info: IC Transistors SMD Type Product specification FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 3 (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO

Contextual Info: Transistors IC SMD Type Emitter common Dual Digital Transistors FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage

SC107B

Abstract: marking G3 G3 sot-353
Contextual Info: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW (2) (1) (4) (1) (4) (2) (3) (5) EMG3 (SC-107BB) SMT5 UMG3N SOT-353 (SC-88A)

MARKING CODE G3

Abstract: AF MARKING CODE marking AF marking AF SOT marking G3
Contextual Info: MMBTBC337-40 NPN Silicon Epitaxial Planar Transistor for switching, AF driver and amplifier application, especially suited for automatic insertion in thick and thin-film circuits. Marking Code: “G3” SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

Contextual Info: PN2907A PNP SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN2222A KM hM TO-92

mpsa56

Contextual Info: MPSA55 / MPSA56 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Recommended for Driver and Low-Power Output Stages General Purpose Amplifier

mpsa06

Abstract: MPSA05 MPS-A06 MPSA06 transistor MPS-A05
Contextual Info: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages E A TO-92 B Mechanical Data • • • • • C Case: TO-92, Plastic

mpsa92

Abstract: MPSA42 MPSA92 PNP
Contextual Info: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR Features • · · Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 E A Mechanical Data · · · · · C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

Contextual Info: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 E A Mechanical Data • • • • • TO-92 B C Case: TO-92, Plastic

Contextual Info: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.

NSVMMBT589

Abstract: MARKING G3 Transistor
Contextual Info: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring

MMBT589LT1

Abstract: MMBT589LT1G G3 SOT23-3
Contextual Info: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C

125OC

Abstract: VN2222NC B11120
Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

Contextual Info: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector–Emitter Voltage VCEO –30

STAC2942

Abstract: STAC244 STAC2942B-I FERRITE TOROID R4270
Contextual Info: STAC2942B-I RF power transistor HF/VHF/UHF N-channel MOSFETs Custom data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

TO-243AA

Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

marking 3A sot-89

Abstract: 3V02 SIVN3205 VN3205
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with