MARKING G2J Search Results

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

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Abstract: mmic e3 UPG2006TB UPG2006TB-E3 GaAs MMIC SPDT Switch SOT-363
Contextual Info: PRELIMINARY DATA SHEET L,S BAND 1.8 V CONTROL VOLTAGE SPDT GaAs MMIC SWITCH UPG2006TB OUTLINE DIMENSIONS Units in mm FEATURES • LOW CONTROL VOLTAGE: 1.8 V PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.30 dB TYP at f = 1 GHz LINS = 0.45 dB TYP at f = 2.5 GHz

marking g2j

Abstract: GaAs MMIC SPDT Switch SOT-363 mmic e3 UPG2006TB UPG2006TB-E3
Contextual Info: PRELIMINARY DATA SHEET L,S BAND 1.8 V CONTROL VOLTAGE SPDT GaAs MMIC SWITCH UPG2006TB OUTLINE DIMENSIONS Units in mm FEATURES • LOW CONTROL VOLTAGE: 1.8 V PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.35 dB TYP at f = 1 GHz LINS = 0.45 dB TYP at f = 2.5 GHz

Contextual Info: Data Sheet 1.2A, 1.4MHz High Efficiency Synchronous DC-DC Buck Converter General Description Features The AP3417B is a 1.4MHz fixed frequency, current mode, PWM synchronous buck step-down DC-DC converter, capable of driving a 1.2A load with high efficiency, excellent line and load regulation. The

HS350

Abstract: UPG2006TB UPG2006TB-E3 VP215
Contextual Info: NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz NEC's UPG2006TB is a L, S-band SPDT Single Pole Double Throw switch for digital cellular or cordless telephone

HS350

Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2006TB L, S-BAND 1.8 V CONTROL VOLTAGE SPDT SWITCH DESCRIPTION The µPG2006TB is an L, S-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low

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Abstract: HS350 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 2W Wireless Power Receiver with Integrated Linear Battery Charger IDTP9026 Preliminary Datasheet Description Features •                The IDTP9026 is a high efficiency, constant current / constant voltage wireless power receiver and linear

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1