MARKING FR SOT323 Search Results

Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SOT-323 Plastic-Encapsulate Diode ZENER DIODE SOT—323 FEATURES： 1.25±0.05 1.01 REF Planar Die Construction 200mW Power Dissipation on FR-4 PCB General purpose, Medium Current Ideally Suited for Automated Assembly Marking: see table on page2 The first code

marking FR PNP SOT323

Abstract: BF824W
Contextual Info: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.

Contextual Info: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G

marking FR PNP SOT323

Abstract: LBC807-40WT1G LBC807-40WT3G YL marking sc70
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel LBC807-40WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device LBC807-40WT1G Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel

LBC807-40WT1G

Abstract: LBC* MARKING LBC807-40WT3G e1 IC sot323 marking FR PNP SOT323
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel LBC807-40WT1G

marking FR PNP SOT323

Abstract: TRANSISTOR BL 560 sot marking code FQ TRANSISTOR FQ 2SA1576AW 2SC4081 marking code fq sot323 transistor marking marking FR SOT323 marking code fs 1 sot 323
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=200mW z Excellent HFE Linearity. z Complements the 2SC4081. 2SA1576AW Pb Lead-free APPLICATIONS z General purpose application. SOT-323 ORDERING INFORMATION

MUN5130

Contextual Info: MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors BRT R1 = 1 kW, R2 = 1 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: Philips Sem iconductors k b 53^31 ' N A f lE R 0 0 2 5 C1 E 7 fiS ^ ^B A P X P H IL IP S /D IS C R E T E P roduct specification b7E D PNP general purpose transistor FEATURES PMSS3906 PIN CONFIGURATION • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323

Contextual Info: MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3, NSBA124XF3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2240, MMUN2240L, MUN5240, DTC144TE, DTC144TM3, NSBC144TF3 Digital Transistors BRT R1 = 47 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

marking 6H

Abstract: NSBA123EF3 marking 6H SC-88
Contextual Info: MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

NSBC124XF3

Contextual Info: MUN2234, MMUN2234L, MUN5234, DTC124XE, DTC124XM3, NSBC124XF3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

MMUN2235LT1G

Abstract: marking AA2 sot
Contextual Info: MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

marking 6l

Abstract: A6L transistor
Contextual Info: MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3, DTA124XF3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

NSBC123EF3

Contextual Info: MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

marking 6Y

Contextual Info: MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3 Digital Transistors BRT R1 = 100 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

NSVMUN2212T1G

Contextual Info: MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors BRT R1 = 22 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2240, MMUN2240L, MUN5240, DTC144TE, DTC144TM3, NSBC144TF3 Digital Transistors BRT R1 = 47 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single