MARKING FM ST Search Results

1N60P

Abstract: diode sod-123 marking code FN
Contextual Info: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS

s9018 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8

1N60P

Abstract: diode sod-123 marking code 26
Contextual Info: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8

tokin 473 5.5v

Abstract: 0,10f, 5,5v, nec tokin 0,047F 5.5v FM0H103ZF FM0H224ZF 5.5v 0.047f 25 fmr 160 FME0H473ZF FMR0V104ZF FM0V224ZF
Contextual Info: 6.2 FM Series Dimensions 10.5±0.5 T±0.5 11.5±0.5 0.4±0.1 5±1 0.5±0.1 0.4±0.1 5±0.5 （Unit：mm） Markings Negative polarity identification NT MAX operating voltage Nominal capacitance 5.5V – 473 A1 + E E ：FME type marking L ：FML type marking

Contextual Info: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking

BF 22 W

Contextual Info: BF 543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

Q62702-F1372

Contextual Info: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

Bb515

Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package

c22e

Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
Contextual Info: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code

Contextual Info: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1

marking code diode 0t

Contextual Info: FM ^^ÊÊÊjÊÊÊ^ CLL2003 HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.

mosfet bf 987

Abstract: BF 987 BF987 98-7
Contextual Info: Silicon N Channel MOSFET Triode ● For high-frequency stages up to 300 MHz, preferably in FM applications ● High overload capability BF 987 Type Marking Ordering Code BF 987 – Q62702-F35 Pin Configuration 1 2 3 D S Package1 TO-92 G Maximum Ratings Parameter

Contextual Info: Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol

transistor BF 414

Contextual Info: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

bf987

Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 987 • For high-frequency stages up to 300 MHz, preferably in FM applications • High overload capability Type Marking Ordering Code BF 987 - Q62702-F35 Pin Configuration 1 2 3 D S Package1 G TO-92 Maximum Ratings

bf999

Abstract: For high-frequency stages up to 300 MHz triode sot23 sot-23 MARKING GU
Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 999 • For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 BF 999 LB Q62702-F1132 G D Package1) S SOT-23 Maximum Ratings Parameter

SDP510WMUF

Abstract: SOT-323F
Contextual Info: SDP510WMUF Semiconductor Pin Diode Features • • • • • SMD package : SOT-323F Low capacitance : CT=0.25pF Typ. Low series resistance : rs=1.5Ω(Typ.) VHF tuner band RF attenuator application AGC for FM tuner Ordering Information Type No. Marking

KSD301

Abstract: SOT323F Diode marking CODE 5M KSD-301 MARKING SMD IC CODE SOT-323F marking CODE R SMD DIODE MARKING CODE SMD IC SMD MARKING CODE transistor SDP510WMUF
Contextual Info: SDP510WMUF Semiconductor Pin Diode Features • • • • • SMD package : SOT-323F Low capacitance : CT=0.25pF Typ. Low series resistance : rs=1.5Ω(Typ.) VHF tuner band RF attenuator application AGC for FM tuner Ordering Information Type No. Marking

UPRIGHT INDUCTOR WITH CORE

Abstract: drum core smd led datasheet coil inductor smd 5.1 smd diode marking 77 SMD INDUCTOR 100 smd transistor marking 26 marking 562 VLP4612T-150MR42
Contextual Info: 1/1 001-02 / 20030811 / e531_vlp46.fm VLP Series VLP46 Type Inductors(Coil) For Power Supply SMD SHAPES AND DIMENSIONS On the side at which the winding starts 3.0±0.20 Inductance marking 4.6±0.20 1.2max. FEATURES • This is an SMD power inductor for power supplies that has an

Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

Contextual Info: Switching Diode 3 CATHODE BAS16LT1 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current 3 Symbol Value Unit VR IF 75 200 500 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING