MARKING FHK Search Results

FHK301N

Abstract: marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139
Contextual Info: SOT-23 MOS 场效应三极管（SOT-23 MOSFET TRANSISTORS） 型号 TYPE FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK169 FHK170 FHK284P FHK301N FHK302P FHK303N FHK304P FHK336P FHK337N FHK338P FHK340P FHK357N FHK358P FHK359AN FHK360P FHK7002

9407A

Abstract: FHK9407A "Field Effect Transistor" field effect transistor
Contextual Info: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).

FHK7002

Abstract: 200A diode VDS-25V
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 ReservedMOSFET Transistors 场效应管 N-Channel Enhancement-Mode FHK7002 MAXIMUM RATINGS(Ta=25℃) 最大额定值

SOT 33M marking

Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2312 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻

pfv2

Abstract: mosfet vgs 5v SOT23
Contextual Info: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK2301 P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻

3055L

Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性

4435a

Abstract: 4435a MOSFET F 4435a FHK4435A
Contextual Info: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK4435A P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-223 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻

Contextual Info: 結型場效應管 N-Channel Enhancement-Mode MOSFET N-Channel Enhancement-Mode MOSFET 結型場效應管 FHK7002 DESCRIPTION & FEATURES 概述及特點 Low on-resistance. 低導通阻抗 Fast switching speed. 快速開關特性 Low-voltage drive.低啟動電壓

SOT-23 Marking 2302

Abstract: mosfet 20v 30A MOSFET 2302 2302 SOT-23
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2302 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻

8205 A mosfet

Abstract: 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205
Contextual Info: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET FHK8205 Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 SOT-26 DESCRIPTION & FEATURES 概述及特點 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻

9926 mosfet

Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
Contextual Info: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻

MOSFET 40A 600V

Abstract: 1N60 mosfet
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK4N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate

1N60 mosfet

Abstract: MOSFET 300V SOT-89 Power MOSFET 50V 10A FHK1N60 mosfet 300V 10A mosfet 1N60
Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK1N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 The FHK1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate

1N60 mosfet

Contextual Info: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK7N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate

DFLZ10

Abstract: DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features

marking Fhk

Abstract: DFLZ10
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features

marking Fhk

Abstract: DFLZ5V6 DFLZ10
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Features • • •

DFLZ33

Abstract: zener diode 6.2v 1w DFLZ5V6 DFLZ10
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ5V1 - DFLZ33 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features • · · 1W Power Dissipation on FR-4 PCB

DFLZ5V6

Abstract: DFLZ10
Contextual Info: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Features • • • • Mechanical Data • • 1W Power Dissipation on FR-4 PCB Lead Free Finish, RoHS Compliant Note 2 "Green" Molding Compound (No Br, Sb) Qualified to AEC-Q101 Standards for High Reliability

cu marking code zener

Abstract: DFLZ5V6 DFLZ10
Contextual Info: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Please click here to visit our online spice models database. Features • • • • Mechanical Data • • 1W Power Dissipation on FR-4 PCB Lead Free Finish, RoHS Compliant Note 2 "Green" Molding Compound (No Br, Sb)

DFLZ5V6

Abstract: DFLZ10
Contextual Info: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • • • • • • • 1W Power Dissipation on FR-4 PCB Lead-Free Finish; RoHS Compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)

DFLZ10

Contextual Info: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB   Lead-Free Finish; RoHS Compliant Notes 1 & 2   Halogen and Antimony Free. “Green” Device (Note 3)

DFLZ9V1Q

Contextual Info: DFLZ5V1Q - DFLZ39Q 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI 123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB • • Large, exposed pad and heat sink designed for superior thermal • performance Case: POWERDI123 Case Material: Molded Plastic, “Green” Molding Compound. UL

DFLZ5V6

Abstract: DFLZ10
Contextual Info: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB   Lead-Free Finish; RoHS Compliant Notes 1 & 2   Halogen and Antimony Free. “Green” Device (Note 3)