MARKING EA MOSFET Search Results

Contextual Info: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y6 1.4

Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4

Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6

14538

Contextual Info: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15

Contextual Info: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6

Contextual Info: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6

Contextual Info: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14216 Revision. 3 Product Standards MOS FET SK8603180L SK8603180L Silicon N-channel MOSFET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 18 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 6.7 m  (VGS = 4.5 V)

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

MARKING G3 Transistor

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

125OC

Abstract: VN2222NC B11120
Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

pl1520

Abstract: K3192
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm • Features 5.0±0.2 (0.7) 15.0±0.3 φ 3.2±0.1 M Di ain sc te on na tin nc ue e/ d 21.0±0.5 (3.2) 11.0±0.2 15.0±0.2 • Avalanche energy capability guaranteed

MP2360DG-LF-Z

Abstract: MP2360DG MP2360DG-lf k mps wurth 24v A916CY-4R7M B230A BAT54 DR73-4R7 EV2360DG-00B
Contextual Info: TM MP2360 1.8A, 24V, 1.4MHz Step-Down Converter The Future of Analog IC Technology TM DESCRIPTION The MP2360 is a monolithic step-down switch mode converter with a built-in internal power MOSFET. It achieves 1.8A continuous output current over a wide input supply range with

schematic diagram converter input 24v to 12v

Abstract: converter circuit dc to Dc 2V to 24V schematic diagram converter 12v to 24v 24v to 12v converter CIRCUIT DIAGRAM MPS TOP MARKING QFN8
Contextual Info: TM MP28368 1.8A, 24V, 1.4MHz Step-Down Converter The Future of Analog IC Technology TM DESCRIPTION FEATURES The MP28368 is a monolithic step-down switch mode converter with a built-in internal power MOSFET. It achieves 1.8A continuous output current over a wide input supply range with

MP2371DG-LF

Abstract: diagram Converter 24v to 12v pcb layout marking 18A 12V DC to 24V dC converter schematic diagram MPS TOP MARKING QFN8 mp2371
Contextual Info: MP2371 1.8A, 24V, 700KHz Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2371 is a monolithic step-down switch mode converter with a built-in internal power MOSFET. It achieves 1.8A continuous output current over a wide input supply range with

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3723 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching

AT1730

Abstract: AT1730P TSSOP16 MARKING EA MOSFET
Contextual Info: AT1730 Preliminary Product Information 2-Channel PWM Controller for LCD Bias Features General Description • Low input voltage: 2.4V to 6V • 2-Channels PWM Control: Nch-MOSFET driving CH1 Nch/Pch-MOSFET driving(CH2) • Adjustable Soft start time and maximum duty

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit: mm For switching 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating

2SJ0536

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 • Features

k3731

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching

k365

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 φ 3.2±0.1 Unit 230 V Gate-source surrender voltage VGSS ±30 V ID 50 A IDP 200 A EAS 2 200 mJ PD 100 W

k3995

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive