MARKING EA 3PIN Search Results

Contextual Info: High-accuracy detection voltage Low current consumption BD48XXG BD49XXG CMOS RESET IC 5 4 BD48XXG/FVE series BD49XXG/FVE series 1 2 1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin : N.C. 5pin : N.C. 3 UNIT:mm 0.2MIN BD48XXG/FVE, BD49XXG/FVE are series of high-accuracy

BD4843G

Abstract: CMOS 4039 BD4840 BD4843 bd4842g BD4840G BD4831 BD4852G UM10332 BD48XXFVE
Contextual Info: High-accuracy detection voltage Low current consumption BD48XXG BD49XXG CMOS RESET IC 5 4 BD48XXG/FVE series BD49XXG/FVE series 1 2 1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin : N.C. 5pin : N.C. 3 UNIT:mm 0.2MIN BD48XXG/FVE, BD49XXG/FVE are series of high-accuracy

Contextual Info: Zener Diodes MAZ3000 Series MA3000 Series Silicon planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 0.65 ± 0.15 3 Average forward current IF(AV) Instanious forward current IFRM Total power dissipation*1 Ptot Non-repetitive reverse surge

Contextual Info: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur

Contextual Info: 2SK1608 Switching Diodes MA1U152K Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des

Contextual Info: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des

M4D MARKING

Contextual Info: 2SK1605 Switching Diodes MA200WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 VRM Single Forward current DC Single Peak forward current Double Single Non-repetitive peak forward surge current Double Tj Storage temperature

Contextual Info: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 M Di ain sc te on na tin nc ue e/ d 2 +0.1 0.16 –0.06 0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo

Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 ● Small capacity between pins, Ct ● Cathode common connection type +0.1 2 +0.1 Short reverse recovery period trr

Contextual Info: 2SK1035 Switching Diodes MA1U157A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct ● Series connection type 0.7–0 ■ Absolute Maximum Ratings Ta= 25˚C

m4l marking

Contextual Info: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current

MA200K

Contextual Info: 2SK1406 Switching Diodes MA200K Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current

MAZW068H

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZWxxxH Series Silicon planar type For surge absorption circuit • Features M Di ain sc te on na tin nc ue e/ d ■ Package • Two elements anode-common type • SSSMini type 3-pin package

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 VRM Non-repetitive peak forwardsurge-current * IFSM Average forward current IF(AV) Junction temperature Tj Storage temperature

IEC1000-4-2

Abstract: MAZW068H MAZW082H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZWxxxH Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Features ■ Package • Two elements anode-common type • SSSMini type 3-pin package

2SC3663

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES PACKAGE DIMENSIONS in mm • Low-voltage, low-current, low-noise and high-gain @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP.

pt1017

Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAS3795E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Reverse voltage (DC)

MAS3795E

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAS3795E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Unit Reverse voltage (DC)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZW000H Series Silicon planar type Unit: mm 0.33+0.05 –0.02 For surge absorption circuit 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • Two elements anode-common type

3 pin mini mold transistor

Abstract: K 460 marking r2 UNRL110 UNRL111 UNRL113 UNRL114 UNRL115
Contextual Info: Transistors with built-in Resistor UNRL110/111/113/114/115 Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 • Features 0.60±0.05 0.20±0.03 4 ■ Resistance by Part Number R1 47 kΩ 10 kΩ 47 kΩ 10 kΩ 10 kΩ

3 pin capacitor

Abstract: B41538-A7338-M S14 K 75 CAPACITOR B41538-A7228-M MARKING 11 3PIN
Contextual Info: Aluminum Electrolytic Capacitors 3-pin capacitor Long-life grade For switch-mode power supplies with high clock frequencies Very low self-inductance Very high current handling capability despite small size; high reliability 35 î 2V Marking ol negative pole

3 pin mini mold transistor

Abstract: UNRL210 UNRL211 UNRL213 UNRL214 UNRL215 UNRL216
Contextual Info: Transistors with built-in Resistor UNRL210/211/213/214/215/216 Silicon NPN epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 • Features 0.60±0.05 0.20±0.03 4 ■ Resistance by Part Number R1 47 kΩ 10 kΩ 47 kΩ 10 kΩ

v6340r

Abstract: SA marking SOT23 V6340RSP3B 33164 V6340 TO-92 marking EA SOT23 V6340 SA marking V6340RTO3E marking E1
Contextual Info: R EM MICROELECTRONIC - MARIN SA V6340 Ultra Low Cost 3-Pin Microprocessor Reset Description Applications The V6340 monitors the supply voltage of any electronic system, and generates the appropriate Reset signal. The threshold must be chosen to the minimum allowed voltage