MARKING E4 SOT Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN203KPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E4

CHN203KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN203KGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E4

Contextual Info: DMA26401 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: E4  Basic Part Number

MA 17358

Abstract: B/TDA 16840
Contextual Info: O K I electronic components KGF1312_ Power FET for UHF-Band Frequencies Plastic Mold Type GENERAL DESCRIPTION The KGF1312, housed in an SOT-89 type plastic-mold package, is a discrete UHF band power FET that features high efficiency and high output power. The KGF1312 specifications are

AN1124

Abstract: AVAGO MARKING E4
Contextual Info: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and

AVAGO MARKING E4

Abstract: MARKING E4 "Pin Diode" marking e4 sot
Contextual Info: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is ­specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and

AVAGO MARKING E4

Abstract: AN1124 381B HSMP3810 HSMP4810 MARKING E4 "Pin Diode" e4 b09
Contextual Info: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and

AVAGO MARKING E4

Abstract: AN1124 diode piv 10 on semiconductor marking code sot Product type marking code 039 sc-70 package pcb layout diode marking code RJ marking code abc marking code e2 Microwave PIN diode spice
Contextual Info: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is ­specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and

SOT-323 package outline

Abstract: sot-23 MARKING 3l AN1124 Microwave PIN diode spice part marking ab sc-70 sc-70 package pcb layout sc70-3 PCB PAD 381B HSMP3810 HSMP4810
Contextual Info: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is ­specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and

AN1124

Abstract: AVAGO MARKING E4 Marking Code ABC Microwave PIN diode spice part marking ab sc-70 PIN DIODE MARKING CODE AB sc-70 package pcb layout sc70-3 PCB PAD 381B HSMP3810
Contextual Info: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is ­specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and

Diodes smd e4

Abstract: E4 smd SMD e5 smd marking e5 Diodes smd e5 ic e4 SMD E4 sot 2SA1256 smd ic marking e5 E5 SMD
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1256 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small NF 2.5dB typ . 0.55 High fT (230MHz typ), and small Cre (1.1pF typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Product specification 2SA1256 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small NF 2.5dB typ . 0.55 High fT (230MHz typ), and small Cre (1.1pF typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

E4 SMD TRANSISTOR

Abstract: smd transistor marking E4 Diodes smd e4 e2 smd transistor marking E2 E4 smd Transistors Diodes smd e2 SMD E4 sot 2SA122 PT-200
Contextual Info: Transistors IC SMD Type Silicon Transistor 2SA1226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low output capacitance 0.55 High gain bandwidth product +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

4nf03l

Abstract: 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST
Contextual Info: STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET II Power MOSFET Features • Type VDSS RDS on ID STN4NF03L 30 V <0.05 Ω 6.5 A 2 Low threshold drive 1 Application ■ 2 3 SOT-223 Switching applications Description This Power MOSFET is the latest development of

3NF06L

Abstract: JESD97 STN3NF06L
Contextual Info: STN3NF06L N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type VDSS @Tjmax RDS(on) max ID STN3NF06L 60 V < 0.1 Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

ZENER DIODE E1

Abstract: C2101 diode marking H2 MMBZ5221BT MMBZ5223BT MMBZ5225BT MMBZ5226BT MMBZ5227BT MMBZ5228BT MMBZ5229BT
Contextual Info: MMBZ5221BT - MMBZ5259BT 150mW SURFACE MOUNT ZENER DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Planar Die Construction General Purpose Ideally Suited for Automated Assembly Processes SOT-523 TOP VIEW B C Mechanical Data · · ·

Contextual Info: MMBZ5221BT - MMBZ5259BT 200mW SURFACE MOUNT ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Planar Die Construction General Purpose Ideally Suited for Automated Assembly Processes SOT-523 TOP VIEW B C Mechanical Data

SO3572R

Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Contextual Info: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo

JESD97

Abstract: N4NF03L STN4NF03L
Contextual Info: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

n1nf10

Abstract: JESD97 STN1NF10
Contextual Info: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature

Contextual Info: MMBZ5221BT - MMBZ5259BT 200mW SURFACE MOUNT ZENER DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Planar Die Construction General Purpose Ideally Suited for Automated Assembly Processes SOT-523 TOP VIEW B C Mechanical Data · · ·

Contextual Info: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"