MARKING DIODES NIHON Search Results

MA862

Abstract: NIHON marking diodes marking diodes nihon
Contextual Info: MA111 Band Switching Diodes MA862 Silicon epitaxial planer type Unit : mm For band switching +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R 0.5 Parameter Reverse voltage DC Forward current (DC) Single Double

Contextual Info: 2SK1036 Switching Diodes MA194 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 1 0.5 0.95 4 0.95 2 3 +0.1 +0.2 Unit Reverse voltage DC VR 40 V Repetitive peak reverse voltage

marking RF 98

Abstract: MA4X862 YHP4191A
Contextual Info: Band Switching Diodes MA4X862 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 0.5 R 35 V IF 100 mA 75 mA/Unit Operating ambient temperature Topr −25 to +85 °C Storage temperature

MA4X194

Contextual Info: Switching Diodes MA4X194 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 1 0.4 − 0.05 0.5 0.95 4 V 40 V + 0.1 0.16 − 0.06 40 0.1 to 0.3 0 to 0.1 VR VRRM 0.8 Unit + 0.2 Rating 1.1 − 0.1 Symbol 0.4 ± 0.2 Average forward

Contextual Info: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 0.5R 2 1 0.60+0.10 –0.05 Reverse voltage Rating Unit VR 35 V IF 100 mA Operating ambient temperature *2

MA4X862

Abstract: MA862 YHP4191A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA4X862 (MA862) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 0.5R 2 1 0.60+0.10 –0.05 Reverse voltage

MA862

Abstract: YHP4191A MA4X862
Contextual Info: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 0.5 R 35 V IF 100 mA 75 mA/Unit Operating ambient temperature Topr −25 to +85 °C Storage temperature

MA862

Abstract: MA4X862 YHP4191A NIHON marking diodes
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA4X862 (MA862) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 M Di ain sc te on na tin nc ue e/ d (0.95) (0.95) 4 1

MA194

Abstract: MA4X194
Contextual Info: Switching Diodes MA4X194 MA194 Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) For switching circuits 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage Single Forward current (Average) Double Repetitive peak

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

MA194

Abstract: MA4X194
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage

MA194

Abstract: MA4X194
Contextual Info: Switching Diodes MA4X194 MA194 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 1 0.4 − 0.05 0.5 0.95 4 V 40 V + 0.1 0.16 − 0.06 40 0.1 to 0.3 0 to 0.1 VR VRRM 0.8 Unit + 0.2 Rating 1.1 − 0.1 Symbol 0.4 ± 0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) • Features 0.5R 2 0.40+0.10 –0.05 Repetitive peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA4X862 (MA862) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 1 (0.65) (0.2) di p Pl lan nclu ea e se

MA4X1940G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X1940G Silicon epitaxial planar type For switching circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Code Mini4-G3 • Pin Name ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X194 (MA194) Unit: mm Silicon epitaxial planar type 2.90+0.20 –0.05 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.5R • Small terminal capacitance Ct

MA4X1940G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X1940G Silicon epitaxial planar type For switching circuits • Package ■ Features • Code Mini4-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

SOT89 marking GA

Abstract: 1N5817 IN5817 MA735 TC115 TC115301EMT TC115331EMT TC115501EMT TC115501
Contextual Info: TC115 PFM/PWM Step-up DC/DC Converter FEATURES GENERAL DESCRIPTION • The TC115 is a high-efficiency step-up DC/DC converter for small, low input voltage or battery powered systems. This device has a guaranteed start-up voltage of 0.9V and a typical supply current of 80 µA. Phase compensation

qs marking sot-89

Abstract: in5817 dk marking code sot-89 TC115501ECT
Contextual Info: TC115 PFM/PWM Step-Up DC/DC Converter Features Package Type • High Efficiency at Low Output Load Currents via PFM Mode • Assured Start-up at 0.9V • 80µA Typ Supply Current • 85% Typical Efficiency at 100mA • 140mA Typical Output Current @ VIN = 2.0V

step up DC DC converter out 9V

Abstract: SOT89 marking GA 1N5817 IN5817 MA735 TC115 TC115301EMT TC115331EMT TC115501EMT
Contextual Info: TC115 PFM/PWM Step-up DC/DC Converter FEATURES GENERAL DESCRIPTION • The TC115 is a high-efficiency step-up DC/DC converter for small, low input voltage or battery powered systems. This device has a guaranteed start-up voltage of 0.9V and a typical supply current of 80 µA. Phase compensation

MA4X862

Abstract: MA862 YHP4191A NIHON koshuha
Contextual Info: Band Switching Diodes MA4X862 MA862 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 1 0.60+0.10 –0.05 Forward current (DC) Single Symbol Rating Unit VR 35 V IF 100 mA 75 mA/Unit Double

PL MARKING 5PIN

Abstract: TC12550
Contextual Info: TC125 TC126 PFM STEP-UP DC/DC REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These

FZ74

Abstract: dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105 TC105303ECT
Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A

Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A