MARKING DIODE 6A Search Results

diode lt 316

Abstract: marking u4 diode
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF6LD60M 600V 6A Feature • raffittì FRD • f i Vf= 1.65V • High Voltage Super FRD • 7 / IÆ - J I/ ^ • Full Molded • Œ ï i H Œ 2kV S I I • Dielectric Strength 2kV • Low V f=1 .65V Main Use • Switching Regulator

diode smd marking jy

Abstract: smd marking 9S
Contextual Info: Schottky Barrier Diode Single Diode mtmm M2FM3 o u tlin e 30V 6A Feature »/JvSÜSMD »Small SMD • Tj=150°C > V f=0.46V >Tj=150°C » Low V f=0.46V >S lR = 0 .2 m A ' Low Ir=0.2 itiA Main Use • K ï / J J —jSJÜKilt • Reverse connect protection for

Contextual Info: VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection e3 Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge

FQB6N40CF

Abstract: FQB6N40CFTM
Contextual Info: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

Si5475DDC-T1-GE3

Contextual Info: New Product Si5475DDC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6a 0.040 at VGS = - 2.5 V - 6a 0.052 at VGS = - 1.8 V a -6 Qg (Typ.) 20 nC • Halogen-free • TrenchFET Power MOSFET

6y150

Abstract: 6Y150AS 6015AS DIODE F10 6Y150AS IXYS
Contextual Info: DSS 6-015AS IFAV = 6A VRRM = 150 V V F = 0.62 V Power Schottky Rectifier VRSM VRRM V V 150 150 Type marking A TO-252 AA C on product DSS 6-015AS A 6Y150AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 160°C; rectangular, d = 0.5

GMF05LC-HS3

Contextual Info: GMF05LC-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6A Features • • • • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V ESD-immunity acc. IEC 61000-4-2

IR140F

Contextual Info: GMF05C-HS3 Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6A Features • Ultra compact LLP75-6A package • 5-line ESD-protection • Surge immunity acc. IEC 61000-4-5 IPPM > 12 A • Low leakage current IR < 1 µA • ESD-immunity acc. IEC 61000-4-2

Contextual Info: GMF05C-HS3 Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6A Features • Ultra compact LLP75-6A package • 5-line ESD-protection • Surge immunity acc. IEC 61000-4-5 IPPM > 12 A • Low leakage current IR < 1 µA • ESD-immunity acc. IEC 61000-4-2

Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 6A Slim Type Medium Load Control FTR-LY Series n FEATURES Slim 15.0mm (h) x 5.0 mm (w) x 28.0mm (l) 1 form C and right angle type available l Mounting space: 140mm2, weight: 5.0g l High insulation in small package Insulation distance (between coil and contacts): 8mm

GD3NB60HD

Abstract: STGD3NB60HD STGD3NB60HDT4
Contextual Info: STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT TYPE VCES VCE sat (Max) @25°C IC @100°C STGD3NB60HD 600 V < 2.8 V 6A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH FREQUENCY OPERATION TYPICAL SHORT CIRCUIT WITHSTAND TIME

STC6NF30V

Abstract: C6NF30V JESD97
Contextual Info: STC6NF30V N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type VDSS RDS on ID STC6NF30V 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A • Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface

6A1 diode

Contextual Info: Silicon Rectifier Formosa MS 6A05 THRU 6A10 List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 6A05 THRU 6A10 List List. 1 Package outline. 2

AP3986

Contextual Info: AP3986P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 1.4Ω ID G 6A S Description AP3986 series are specially designed as main switching devices for universal

DTV1500HD

Abstract: DTV1500HF DTV1500HFP ISOWATT220AC
Contextual Info: DTV1500Hxx CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 6A VRRM 1500 V VF (max) 1.7 V trr (max) 125 ns K FEATURES AND BENEFITS High breakdown voltage capability High frequency operation Specified turn on switching characteristics

PT570LC4

Abstract: 74118 2500VRMS 3000VA E214025 EN60947-4-1 relays schrack relay 17a 12v PT570730 miniature 12v relay schrack
Contextual Info: General Purpose Relays Industrial Relays Schrack Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode

Contextual Info: Ordering number : ENA0273B FW4604 N-Channel Power MOSFET http://onsemi.com 30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8 Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in • •

apm4048d

Abstract: APM4048D. datasheet apm*4048D APM4048 APM4048DU4 MOSFET N-CH 200V 2l TRANSISTOR SMD MARKING CODE STD-020C DSA0042784
Contextual Info: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)=37mΩ (typ.) @ VGS= -10V (3) D1

d2 diode series

Abstract: marking code DIODE R3 ulc 2003 diode Marking Code 65 marking code REC marking code diode marking CODE D2 DIODE diode marking JA MARKING CODE VF CMPD6001
Contextual Info: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process,

marking code u8

Abstract: .6A marking code
Contextual Info: VBUS054CV-HS3 Vishay Semiconductors 4-Line BUS-Port ESD-Protection Features • • • • • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection Low leakage current e3 Low load capacitance CD = 1.2 pF ESD-protection acc. IEC 61000-4-2

Contextual Info: Preliminary Data Sheet PA2373T1P Dual Drain common , N-channel MOSFET R07DS0674EJ0101 Rev.1.01 Aug 19, 2013 24V, 6A, 23.0mΩ DESCRIPTION The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source. The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.