MARKING DIODE 6A Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:

6Y150AS

Abstract: 6Y150AS IXYS
Contextual Info: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak

Contextual Info: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

DIODE MARKING CODE B3

Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:

Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

6P060AS

Abstract: marking diode 6a
Contextual Info: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: 976nm Butterfly Packaged Diode Laser K98S14F-3.00W Key Features： Š 3W output power Š 105µm fiber core diameter Š 0.22NA Š 976nm wavelength Applications： Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by

BAS16

Abstract: bas16 a6 BAS16/S/U/W BAS16-03W a6s marking A6s sot23 BAS16 SOT23 BAS16 transistor BAS1602W a6 bas16
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ !    " # ,  BAS16-07L4 " , , ! ! ,  ! ,  Type Package Configuration Marking BAS16 BAS16S BAS16U BAS16W BAS16-02L*

Contextual Info: 785nm Fiber-Coupled Diode Laser K78S06F-1.60W Key Features： Š 1.6W output power Š 105µm or 200µm fiber core diameter Š 0.22NA Š 785nm wavelength Applications： Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking

CV marking code diode transient

Abstract: ERA82-004 a316 j
Contextual Info: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF I S t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t

Contextual Info: n ix Y S Advanced Technical Data Fast Recovery Epitaxial Diode FRED DSEI6 I vr RRM t v RSM V V RRM V Type 640 600 DSEI 6-06AS 6A 600 V 35 ns FAVM rr TO-252AA marking on product Anode Symbol 6I060AS Test Conditions ^FRM TVJ Tc = 125°C; rectangular, d = 0.5

c81-004

Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Contextual Info: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class

14538

Contextual Info: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15

Contextual Info: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ¬

6P060AS

Abstract: 6p060
Contextual Info: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM

6P060AS

Contextual Info: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Anode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM

6P060AS

Abstract: 6-06AS
Contextual Info: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V = 20 ns trr with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM

ERA82-004

Abstract: P151 T151 T810 T930 a316
Contextual Info: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na