MARKING D45 Search Results

T85/55

Abstract: 6c marking 24vdc 125v 15a led matrix 8 8 one colour KG41 KG44 Si 6823
Contextual Info: KG series Power rocker switches Distinctive features and specifications ❑ Illuminated or non-illuminated ❑ Protected rocker ❑ Sealed to IP 65 ❑ Laser marking ❑ VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS D MATERIALS • Currrent/voltage rating :

t85/55

Abstract: KG35 marking code KG35 KG44-1R 24vdc to 12vdc LED driver KG44 KG41 led matrix 8 8 one colour KG49 KG46
Contextual Info: KG series Power rocker switches Distinctive features and specifications ❑ Illuminated or non-illuminated ❑ Protected rocker ❑ Sealed to IP 65 ❑ Laser marking ❑ VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS D MATERIALS • Currrent/voltage rating :

Contextual Info: Pomona Model 4590 Mounting Base, Triple Banana Jack For Standard Banana Jack MATERIALS: Body: Polycarbonate Color: Black Marking : Pomona Electronics RATINGS: Operating Temperature: +115° C. +239° F. Max. ORDERING INFORMATION: Model 4590-* *=Color, -0 Black

D4555

Contextual Info: Pomona Model 4555 Do-It-Yourself Minigrabber® Test Clip MATERIALS: Body: Contact – Gold Plated Beryllium Copper, Spring – Stainless Steel Insulation: Glass filled nylon. Marking: “Pomona 4555” RATINGS: Voltage: Hand-held testing: 30VAC/60VDC Max.

D4555

Abstract: minigrabber
Contextual Info: Pomona Model 4555 Do-It-Yourself Minigrabber® Test Clip MATERIALS: Body: Contact – Gold Plated Beryllium Copper, Spring – Stainless Steel Insulation: Glass filled nylon. Marking: “Pomona 4555” RATINGS: Voltage: Hand-held testing: 30VAC/60VDC Max.

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

Contextual Info: 07 Q E s — • O3 fU <— i O U m- Operating Point Ruhestellung Rest Position Zulassige Endstellung: Gehauseoberkante, keine Auflagekraft zulassig. D £ O • O (D c e Approved end position: Upper edge of case, no supporting force allowed. Aufschrift Marking

C10-A10FX

Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
Contextual Info: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays

Contextual Info: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 45A 品名 Type No. • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 80 0264 ∼ ∼ 27 ∼ −

Contextual Info: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT160 Unit : mm Weight : 22g typ. Package TSB-5PIN 1600V 45A • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 160 0264 ∼ ∼ 27 ∼ − 管理番号（例）

D45X

Abstract: 330 marking diode SHINDENGEN DIODE SHINDENGEN
Contextual Info: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422

D45X

Abstract: J534 D45XT80 SHINDENGEN DIODE D45Xt-80
Contextual Info: 大容量 シングルインライン型 3 Phase Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D45XT80 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 800V 45A 特長 品名 Type No. • ３相ブリッジ • 薄型 SIP パッケージ

D45H11

Abstract: D45H11J3
Contextual Info: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2006.04.07 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics • Pb-free package

D45H11

Abstract: D45H11J3 C607J3
Contextual Info: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 BVCEO IC RCESAT -80V -8A 75mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics

Contextual Info: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422

Contextual Info: D45C12 PNP , D44C12 (NPN) Complementary Silicon Power Transistor . . . for general purpose driver or medium power output stages in CW or switching applications. • Low Collector−Emitter Saturation Voltage — 0.5 V (Max) • High ft for Good Frequency Response

D44VH10/D45VH10

Contextual Info: , One. 20 STERN AVE. TELEPHONE: 973 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 U.S.A. FAX: (973) 376-8960 D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulator's and

D44H8G

Abstract: D45H11G D44H11G D45H8G D44H D44H11 D44H8 D45H D45H11 D45H8
Contextual Info: D44H Series NPN , D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as Ăgeneral purpose power amplification and switching such as output or driver stages in applications such as switching regulators,

D44VH10G

Abstract: D44VH10 D45VH10 D45VH10G
Contextual Info: D44VH10 NPN , D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers

Contextual Info: D44H11FP D45H11FP Complementary power transistors Preliminary data Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 1 3 TO-220 Description The devices are manufactured in low voltage multi

D44H8

Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi

D44H11FP

Contextual Info: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

Contextual Info: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description These low voltage transistors are housed in fully