MARKING CODE YB TRANSISTOR Search Results

AY 5 3500

Abstract: ring COUNTER marking code y6 package marking y6 AY-5-3600 "general instrument" "keyboard encoder" 40 pin a3600 x6 marking AKO+50+365
Contextual Info: Cj [ n i r a l INS! K L iM f N I AY-5-3600 -f Keyboard Encoder FEATURES DESCRIPTION The General Instrument AY-5-3600 is a Keyboard Encoder containing a 3600 bit Read Only Memory and all the logic necessary to encode single pole single throw keyboard closures

TRANSISTOR MARKING YB

Abstract: 74LVC1G38 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW
Contextual Info: 74LVC1G38 2-input NAND gate; open drain Rev. 4 — 5 October 2010 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

Contextual Info: 74LVC1G38 2-input NAND gate; open drain Rev. 6 — 2 July 2012 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

Contextual Info: 74LVC1G38 2-input NAND gate; open drain Rev. 7 — 4 October 2012 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

Contextual Info: 74LVC1G38 2-input NAND gate; open drain Rev. 6 — 2 July 2012 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

marking yb sot23

Abstract: SOT23 5 Code yb PC SOT23 3.0V marking code Yb sot-23 sot23 yb yb sot23 marking YB
Contextual Info: PRELIMINARY SPECIFICATION PI3A4628C 3.0V, SOTiny Single-Supply 0.8Ω SPST NO CMOS Analog Switch with -1.0V to 3.3V Operating Range Features Description • Analog Signal Range: -1.0V to VCC when switch is “On” PI3A4628C is a single-pole/single-throw (SPST) normally open

Contextual Info: 74LVC1G38 2-input NAND gate; open drain Rev. 5 — 6 December 2011 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

74LVC1G38

Abstract: 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW JESD22-A114E MO-203
Contextual Info: 74LVC1G38 2-input NAND gate; open drain Rev. 03 — 27 August 2007 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.

marking code YB

Abstract: 74LVC1G38GW
Contextual Info: 74LVC1G38 2-input NAND gate open drain Rev. 02 — 13 September 2006 Product data sheet 1. General description The 74LVC1G38 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this

LT133X1-104

Abstract: LVDS connector 20 pins LCD 13.3 Samsung tube tv samsung lt133x1-104 TFT LCD n 740 samsung SD5114 lt133x date code marking samsung transistor 2SK1059 DIAGRAM of samsung lcd tv power supply
Contextual Info: APPROVAL TO : DATE : SAMSUNG TFT-LCD MODEL NO. : LT133X1-104 NOTE : Agreed by : Checked by : Assit. Mgr Mgr Senr. Mgr QA Prodt. Tec. Dev. Test PREPARED BY : LCD Application Engneering Team SAMSUNG ELECTRONICS CO., LTD. Doc. No. LT133X1-104 Rev. No 002 - G - 970519

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 11 — 8 April 2013 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

100N055

Abstract: NP100N055PUH NP100N055MUH marking code Yb Transistor TRANSISTOR MARKING YB NP100N055NUH NP100N055NUH-S18 MP-25ZP NP100N055PUHE1AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MUH, NP100N055NUH, NP100N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MUH, NP100N055NUH, NP100N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

100N055

Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MDH, NP100N055NDH, NP100N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

D1881

Abstract: NP90N055PUH NP90N055MUH MP-25ZP NP90N055NUH TRANSISTOR MARKING YB NP90N055NUH-S18
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MUH, NP90N055NUH, NP90N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MUH, NP90N055NUH, NP90N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: 74LVC1G38-Q100 2-input NAND gate; open drain Rev. 1 — 27 November 2013 Product data sheet 1. General description The 74LVC1G38-Q100 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 9 — 28 November 2011 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

5252 F 1008

Abstract: transistor 1FX sd 1074 transistor SCR SN 100 folded cascode current mirror op amp FSC20000512 LMV712 MSOP-10 MSOP-10L Q-2000
Contextual Info: LMV712 Rail-to-Rail I/O, Dual Op Amp Qualification Package National’s LMV712 Dual Op Amp Offers 5V/µs Slew Rate, 5 MHz GBW LLP-10 • 0.1 µA Shutdown Current • Noise at <20 nV/√ Hz @ 1 kHz • Drives 600Ω Load @ 2.7V Actual Size 3 mm x 3 mm x .75 mm

74LVC2G38

Abstract: 74LVC2G38DC 74LVC2G38DP 74LVC2G38GM 74LVC2G38GT
Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 8 — 4 November 2010 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

Contextual Info: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA

Contextual Info: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA

Contextual Info: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA

Contextual Info: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA