MARKING CODE TOSHIBA Search Results

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

marking codes fairchild

Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

Marking r2a

Abstract: TPC6K01
Contextual Info: TPC6K01 TOSHIBA Compound Device Silicon-Diffused Type TPC6K01 Unit: mm ○ General-Purpose Rectifier Applications 0.3±0.1 4 +0.2 1.6 -0.1 Forward voltage: VFM = 1.1 V max Average forward current: IF (AV) = 0.3 A Two diodes are housed in a small, thin package suitable for

Contextual Info: U5ZA48C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA48C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Controls, Measuring Instruments,

diode zener 27c

Abstract: zener 27c Diode marking 27C U5ZA27C
Contextual Info: U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27(Z), U5ZA27C ! ! ! ! ! Unit: mm BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEMS ELECTRONIC SYSTEMS FOR USE IN AUTOMOBILES ELECTRONIC SYSTEMS FOR COMMERCIAL USE ELECTRONIC SYSTEMS FOR INDUSTRIAL USE

Contextual Info: U5ZA53C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA53C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Control, Measurement Instruments,

marking code 27c

Abstract: 27c diode toshiba toshiba marking code transistor toshiba zener 27C zener diode zener 27c U5ZA27C U5ZA27
Contextual Info: U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27(Z), U5ZA27C Unit: mm BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEMS ELECTRONIC SYSTEMS FOR USE IN AUTOMOBILES ELECTRONIC SYSTEMS FOR COMMERCIAL USE ELECTRONIC SYSTEMS FOR INDUSTRIAL USE

Contextual Info: TPC6K01 TOSHIBA Compound Device Silicon-Diffused Type TPC6K01 ○ General-Purpose Rectifier Applications Unit: mm 0.3±0.1 4 3 2.9±0.2 Characteristics Symbol Repetitive peak reverse voltage VRRM Average forward current IF AV Non-repetitive peak surge current

tpc6k01

Contextual Info: TPC6K01 TOSHIBA Compound Device Silicon-Diffused Type TPC6K01 ○ General-Purpose Rectifier Applications Unit: mm 0.3±0.1 Symbol Rating Unit Repetitive peak reverse voltage VRRM 400 V Average forward current IF AV Non-repetitive peak surge current Junction temperature

MARKING S3H TRANSISTOR

Abstract: DIODE S3H S3H MARKING S3H 02 diode TPC6108
Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPC6108 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

3-11J2A

Abstract: toshiba lead free toshiba lead free mark toshiba marking code diode
Contextual Info: U5ZA48C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA48C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Controls, Measuring Instruments,

Diode marking 27C

Abstract: 27c diode toshiba
Contextual Info: U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27(Z), U5ZA27C z z z z z BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEMS ELECTRONIC SYSTEMS FOR USE IN AUTOMOBILES ELECTRONIC SYSTEMS FOR COMMERCIAL USE ELECTRONIC SYSTEMS FOR INDUSTRIAL USE

marking 53C

Contextual Info: U5ZA53C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA53C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Control, Measurement Instruments,

Contextual Info: U5ZA48C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA48C Best Suited for Overvoltage Protection of Electronic Systems Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Controls, Measuring Instruments,

TPCT4204

Abstract: marking code SSs
Contextual Info: TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCT4204 TENTATIVE Lithium Ion Secondary Battery Applications Unit: mm • Lead(Pb)-Free • Small footprint due to small and thin package • Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.)

27c diode toshiba

Abstract: marking code 27c Diode marking 27C toshiba 27c diode Z27 Z27 toshiba marking code toshiba toshiba control code max2336 U5ZA27C
Contextual Info: U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27(Z), U5ZA27C z z z z z BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEMS ELECTRONIC SYSTEMS FOR USE IN AUTOMOBILES ELECTRONIC SYSTEMS FOR COMMERCIAL USE ELECTRONIC SYSTEMS FOR INDUSTRIAL USE

Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

S3H 02 diode

Abstract: DIODE S3H tpc6108 MARKING S3H TRANSISTOR
Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

energy absorption of diode

Abstract: U5ZA40C
Contextual Info: U5ZA40C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA40C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Control, Measurement Instruments

S3H 02 diode

Abstract: MARKING S3H TRANSISTOR DIODE S3H
Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

DIODE S3H

Abstract: S3H 02 diode tr/S3H 02 diode
Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)

Contextual Info: U5ZA40C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA40C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Control, Measurement Instruments