MARKING CODE R7 RF TRANSISTOR Search Results

Contextual Info: 35E D Bi Ö23tj320 001703b 5 WkSIP. NPN Silicon RF Transistor oj _ SIEMENS/ SPCL-, SEMICONDS _/a B F R 106 _ _ • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFR740L3

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

617DB-1024

Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

Marking C4 SOT23-5

Abstract: D06A marking code ce SOT23 MARKING CODE R7 DIODE LM3460 MA05B SHUNT REGULATOR marking "7A" MARKING CODE R7 RF TRANSISTOR
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip

GSM/GSM module circuit diagram

Abstract: GRM36COG470J GRM36X7R103K25 Murata switchplexer motorola gsm range power amplifier module GRM36X7R104K25 142-0711-821 GRM36COG3R9J50 gsm block diagram DCS1800
Contextual Info: Advance Information MMM5063/D Rev. 0, 12/2002 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/

Marking C4 SOT23-5

Abstract: D09A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

GSM/GSM module circuit diagram

Abstract: GRM36COG470J50 Murata switchplexer DCS1800 GSM900 MMM5063 PCS1900
Contextual Info: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Advance Information MMM5063/D Rev. 0.2, 09/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.

Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

vpc3 c

Abstract: RF transistor gain 20dB vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

VPC3 C

Abstract: vpc3
Contextual Info: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This

3.5GHz BJT

Abstract: cpe wimax
Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

MARKING CODE EA1

Abstract: marking code GBW marking EA2 AP2001 VT100 36-40V
Contextual Info: AP2001 Monolithic Dual Channel PWM Controller Features General Description The AP2001 integrates Pulse-width-Modulation PWM control circuit into a single chip, mainly designs for power-supply regulator. All the functions included an on-chip 2.5V reference output, two

inductor vk200

Abstract: 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics
Contextual Info: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS

sd2942

Abstract: SD2942w SD2942 equivalent RG316-25 POWER500 marking 16
Contextual Info: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS

ASK receiver superheterodyne

Abstract: 433 mhz ask rf module A 434 RF Receiver TRANSMITTER PAIR OPA BASEBAND MHZ 0603CS MAX1471 MAX1471ATJ T2055-2
Contextual Info: 19-3272; Rev 1; 3/05 315MHz/434MHz Low-Power, 3V/5V ASK/FSK Superheterodyne Receiver Applications *0.2% BER, 4kbps, Manchester-encoded data, 280kHz IF BW Ordering Information Automotive Remote Keyless Entry RKE Tire Pressure Monitoring Systems Garage Door Openers

Two Digit up counter

Abstract: RFID PSK reader SOURCE CODE ,microchip
Contextual Info: M MCRF200 Contactless Programmable Passive RFID Device Features Package Type • One time contactless programmable • Read only data transmission after programming • 96 or 128 bits of One-Time Programmable OTP user memory (also supports 48 and 64-bit

SD2942

Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
Contextual Info: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed

Contextual Info: THS4304 www.ti.com SLOS436A – MARCH 2004 – REVISED JULY 2004 Wideband Operational Amplifier FEATURES APPLICATIONS • • • • • • • • • • Wide Bandwidth: 3 GHz High Slew Rate: 830 V/µs Low Voltage Noise: 2.4 nV/√Hz Single Supply: 5 V, 3 V

2902Y STMicroelectronics

Abstract: 2902Y KC1330 LM2902YPT STMicroelectronics date code format
Contextual Info: LM2902 Low-power quad operational amplifier Features • Wide gain bandwidth: 1.3 MHz ■ Input common-mode voltage range includes negative rail ■ Large voltage gain: 100 dB ■ Very low supply current per amplifier: 375 µA ■ Low input bias current: 20 nA

AS8444

Abstract: AS8446 CP12 DIN40839 SOIC28 pwm dc motor fet marking code P2
Contextual Info: Data Sheet AS8446 AS 8446 Programmable PWM DC Motor Driver / Controller DATA SHEET Key Features - - Programmable PWM DC Motor Driver / Controller with µP Interface Three Wire Interface Programmable Functions and Parameters for Motor Current, Voltage and Speed Regulation

Contextual Info: EVALUATION KIT AVAILABLE MAX98355A/MAX98355B PCM Input Class D Audio Power Amplifiers General Description The MAX98355A/MAX98355B are digital pulse-code modulation PCM input Class D power amplifiers that provide Class AB audio performance with Class D efficiency. These ICs offer five selectable gain settings

VP225

Abstract: pd603 AN1028 AN-1043 C3225X5R1C226M JESD22-A114 JESD22-A115 IP1206TRPBF capacitors types and values FS300
Contextual Info: PD-60319 iP1206PbF Synchronous Buck Multiphase Optimized LGA Power Block Integrated Power Semiconductors, PWM Control, & Passives Features • • • • • • • • • • • • Input voltage range of 7.5V to 14.5V Output voltage range of 0.8V to 5.5V