MARKING CODE R7 RF TRANSISTOR Search Results

MARKING CODE R7 RF TRANSISTOR

Abstract: transistor B 764 NPN transistor marking W4s marking transistor RF
Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

IEC-134

Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking
Contextual Info: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,

sot marking code ZS

Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Contextual Info: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

MARKING CODE R7 RF TRANSISTOR

Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 1 a wide range of wireless applications up to 10 GHz and more 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: 35E D Bi Ö23tj320 001703b 5 WkSIP. NPN Silicon RF Transistor oj _ SIEMENS/ SPCL-, SEMICONDS _/a B F R 106 _ _ • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions!

Ceramic RF Power and HV Capacitors

Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

BFR740L3

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

Mixers

Abstract: PE4140
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

617DB-1024

Abstract: PE4140G-06DFN balun diode mixer ETC1,6-4-2-3 ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK 4239 mosfet
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

13N50

Abstract: 8140115 nxp marking code M2
Contextual Info: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

617DB-1024

Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

marking code 8 lead msop package analog devices

Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

Contextual Info: Technical Data MMM5062/D Rev. 3, 9/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/

DP358

Abstract: AP358 BI-QUAD RC Active Bandpass Filter AP358S Operational Amplifiers cross reference marking R4 ap358 pin diagram R/Detector/"Detector IC"/"CD"/DP358
Contextual Info: AP358 LOW POWER DUAL OPERATIONAL AMPLIFIERS Features • • • • • • • • • • General Description Internally frequency compensated for unity gain Large dc voltage gain: 100 dB Very low supply current drain 500µA -essentially independent of supply voltage

PE4141

Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

Marking C4 SOT23-5

Abstract: D06A marking code ce SOT23 MARKING CODE R7 DIODE LM3460 MA05B SHUNT REGULATOR marking "7A" MARKING CODE R7 RF TRANSISTOR
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

D06A

Abstract: LM3460 MF05A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

D06A

Abstract: LM3460 MF05A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.

Yaesu

Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable

D44H8

Abstract: 2N3906 AN-450 D06A LM3460 MF05A
Contextual Info: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.