MARKING CODE NE SOT 23 Search Results

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

SOT23 NE

Abstract: marking code ne sot 23 sot-23 marking NE MGSF1N02ELT1
Contextual Info: MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

sot-23 marking NE

Abstract: MGSF1N02ELT1
Contextual Info: MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

MSOP-8 LTJJ

Abstract: marking code 8 lead msop package analog devices MARKING FSE sot LTSP
Contextual Info: LTC1663 10-Bit Rail-to-Rail Micropower DAC with 2-Wire Interface DESCRIPTION FEATURES n n n n n n n n n n n n Micropower 10-Bit DAC in SOT-23 Low Operating Current: 60 A Ultralow Power Shutdown Mode: 10μA 2-Wire Serial Interface Compatible with SMBus Selectable Internal Reference or Ratiometric to

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

BAV70-A4

Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

sot-23-6 led driver Marking Information

Abstract: sot-23-6 led step up driver 3w high power white led driver circuit diagram PAM2803 SOT-23-6 marking .633 power sot-23-6 Marking aa SOT-23-6 marking 633 STEP UP DC DC SOT-23-6 3W led driver thermal resistance of 3W LED
Contextual Info: PAM2803 3W High Power White LED Driver General Descriptio n Features n LED Power Efficiency: up to 90% n Current Accuracy: ± 5% V IN=3.6V to 1.8V @V F=3.7V n Low Start-Up Voltage: 0.9V(I LED=270mA) n Low Hold Voltage:0.75V(I LED=200mA) n 1MHz Switching Frequency

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

k10s

Contextual Info: 電流制御型 KU シリーズ 面実装品（SMD） TS SKUS ERI ES •外形寸法図 OUTLI NEDI MENSI ONS KU10R23NS Package：M2F Marking（ｏld） 230V100A Type No. K10S 2300 品名略号 Type No. 特 長 Date code 10S23 00 00 ② 管理番号 （例）

Contextual Info: SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK NOT FOR NEW DESIGNS Package: SOT-89 Features RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias

F34v

Abstract: LED Driver 1W mosfet "marking code 44" sot-23-6 PAM2801 sot-23-6 led driver Marking Information MBRA210LT3G power sot-23-6 Marking aa Ac to Dc led driver with pwm dimming sot-23-6 led step up driver STEP UP DC DC SOT-23-6
Contextual Info: PAM2801 1W High Power White LED Driver Features General Descriptio n n LED Power Efficiency: up to 90% n LED Current Accuracy: ± 3% V IN=3.2V to 1.1 V @V F=3.4V n Low Start-Up Voltage: 0.9V(I LED=243mA) n Low Hold Voltage:0.65V(I LED=95mA) n Internal 2A MOSFET Switch

SGC6489Z

Abstract: trace code marking SGC
Contextual Info: SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK NOT FOR NEW DESIGNS Package: SOT-89 Product Description Features Optimum Technology Matching Applied 30.0 GaAs MESFET

SGC6489Z

Abstract: EVB1 SGC-6489
Contextual Info: SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK NOT FOR NEW DESIGNS Package: SOT-89 Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

marking se sot 23-5

Abstract: U G N 3140 sensor transistor tic 2260 MARKING VA SOT-23-5 TK71635
Contextual Info: r& TO K O TK716xx LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Available in ± 2.0 % or ± 1.0 % Output Tolerance ■ Battery Powered Systems ■ Active High On/Off Control ■ Cellular Telephones ■ Very Low Quiescent Current ■ Pagers ■ Very Low Dropout Voltage

Transistor BFr 99

Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

bc 212 equivalent

Abstract: siemens CIB
Contextual Info: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 846, BC 847, BC 849, BC 850 NPN

Contextual Info: NX3L2T384 Dual low-ohmic single-pole single-throw analog switch Rev. 4 — 21 June 2012 Product data sheet 1. General description The NX3L2T384 is a dual low-ohmic single-pole single-throw analog switch. Each switch has two input/output terminals nY and nZ and an active LOW enable input (nE). When

Contextual Info: NX3L2G384 Dual low-ohmic single-pole single-throw analog switch Rev. 6 — 17 June 2012 Product data sheet 1. General description The NX3L2G384 is a dual low-ohmic single-pole single throw analog switch. Each switch has two input/output terminals nY and nZ and an active LOW enable input (nE). When

Contextual Info: NX3L2G66 Dual low-ohmic single-pole single-throw analog switch Rev. 7 — 13 June 2012 Product data sheet 1. General description The NX3L2G66 is a dual low-ohmic single-pole single-throw analog switch. Each switch has two input/output terminals nY and nZ and an active HIGH enable input (nE). When

Contextual Info: NX3L2G66 Dual low-ohmic single-pole single-throw analog switch Rev. 7 — 13 June 2012 Product data sheet 1. General description The NX3L2G66 is a dual low-ohmic single-pole single-throw analog switch. Each switch has two input/output terminals nY and nZ and an active HIGH enable input (nE). When