MARKING CODE L3 MONOLITHIC AMPLIFIER Search Results

Amplifier Micro-X "marking code" D

Abstract: MMIC Amplifier Micro-X marking D micro-X Package MARKING CODE C Amplifier Micro-X c5 marking code marking d "micro x" CGY41 MMIC marking CODE c4 Micro-X marking D d marking "Micro-X"
Contextual Info: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz

Amplifier Micro-X "marking code" D

Abstract: MARKING CODE l3 monolithic amplifier Amplifier Micro-X CGY41 MMIC Amplifier Micro-X marking 4 pin MMIC marking CODE c4 micro-X Package MARKING CODE C CGY41 H S-Band Power Amplifier intercept point MMIC Amplifier Micro-X marking g
Contextual Info: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz

Contextual Info: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor  Single-stage monolithic microwave IC MMIC-amplifier  Application range: 100 MHz to 3 GHz 4 3 1 2  Gain: 9.5 dB typ. @ 1.8 GHz  Low noise figure: 2.7 dB typ. @ 1.8 GHz

Amplifier Micro-X "marking code" D

Abstract: MMIC Amplifier Micro-X marking 11 MMIC marking CODE c4 Micro-X Marking D GaAs Amplifier Micro-X
Contextual Info: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor  Single-stage monolithic microwave IC MMIC-amplifier  Application range: 100 MHz to 3 GHz 4 3 1 2  Gain: 9.5 dB typ. @ 1.8 GHz  Low noise figure: 2.7 dB typ. @ 1.8 GHz

diode MARKING CODE 917

Abstract: 1SV70 BIC703M L1103 21l4 sot143rmod DSA003645
Contextual Info: BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

diode MARKING CODE 917

Abstract: 1SV70 BIC703C DSA003645
Contextual Info: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

Hitachi DSA00174

Contextual Info: BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

Hitachi DSA00174

Contextual Info: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

BIC702M

Abstract: 1SV70 air capacitor L1103 DSA003644
Contextual Info: BIC702M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-813D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

diode MARKING CODE 917

Abstract: 1SV70 BIC702C DSA003644
Contextual Info: BIC702C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-814D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

Contextual Info: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •

Contextual Info: TQP3M9039 500−1500 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •

MARKING CODE 106 QFN

Abstract: 04023J0R5BBSTR 3M9040
Contextual Info: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •

3M9039

Abstract: Thin Quad flat package mo-220 68 ECJ0EC1H470J
Contextual Info: TQP3M9039 700−1000 MHz Dual LNA Applications •     Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features     

MJD6039T4

Abstract: MJD6039T4G MSD6100 1N5825 MJD6039 6039G
Contextual Info: MJD6039 Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

J128G

Abstract: MARKING CODE l3 monolithic amplifier
Contextual Info: MJD128T4G, NJVMJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features •      Monolithic Construction With Built−in Base−Emitter Shunt Resistors

Contextual Info: MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features

J128G

Abstract: transistor J128 MJD128T4G 1N5825 J128 MSD6100 d marking code dpak transistor
Contextual Info: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors

6039G

Abstract: 1N5825 MJD6039 MJD6039T4 MJD6039T4G MSD6100 j603
Contextual Info: MJD6039 Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: MJD128T4G, NJVMJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features •     Monolithic Construction With Built−in Base−Emitter Shunt Resistors

MJD128T4G

Abstract: J128G
Contextual Info: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors

Contextual Info: MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features

Contextual Info: MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. Features

Contextual Info: MJD128T4G, NJVMJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features •     Monolithic Construction With Built−in Base−Emitter Shunt Resistors