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    MARKING CODE ER TRANSISTOR Search Results

    MARKING CODE ER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    MARKING CODE ER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


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    2pa1576q2pa1576r2pa1576s2pa17+162pa1774r2pa1774s2pb709aq2pb709ar2pb709as2pb710aqmarking code p07 sot89marking code 3fpp1m marking code sot 223pdtc* marking codep04 sot223ftz marking codet07 markingp2f sot23marking t04 sot23marking code p1f PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846ALT1 Series MARKING DIAGRAM 3 COLLECT OR xx M 1 B ASE xx 2 EMIT T ER M • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V 3 1 = Device Code = See Table = Date Code 2


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    lbc846alt1lbc846lbc847lbc850+4lbc848lbc849ot-23lbc846alt1-4/5 PDF

    Contextual Info: STD1408PI NPN Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= 80V Min. Com plem ent t o STB1017PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


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    std1408pistb1017pio-220f-3lstd1408+2sdb20d45ksd-t0o111-000 PDF

    Contextual Info: STC403 NPN Silicon Transistor Features • Power Transist or General Purpose applicat ion • Low sat urat ion volt age : VCE SAT = 0.4V Typ. • High Volt age : VCEO= 60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k ing Pa ck a ge Code


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    stc403o-220f-3lsdb20d45ksd-t0o017-003 PDF

    Stc405

    Contextual Info: STC405 NPN Silicon Transistor Features PIN Connection • Low sat urat ion swit ching applicat ion • Volt age regulat or applicat ion • High Volt age : VCEO= 60V Min. 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code STC405 STC405


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    stc405o-220f-3lsdb20d45ksd-t0o064-001 PDF

    Contextual Info: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


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    stb1017pistd1408pio-220f-3lstb1017+2sdb20d45ksd-t0o110-000 PDF

    Contextual Info: STC603PI NPN Silicon Transistor Features • Power Transist or General Purpose applicat ion • Low sat urat ion volt age : VCE SAT = 0.4V Typ. • High Volt age : VCEO= 60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k ing


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    stc603pio-220f-3lstc603sdb20d45+1ksd-t0o114-000 PDF

    OPTOCOUPLER tl 521

    Abstract: P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6
    Contextual Info: 5 . Supplem entary Inform ations 5-1 C urrent Transfer Ratio CTR and Trigger LED C urrent (IFT) Ranking and M arking Stan d ard rank classifications are applied for the C T R on transistor-type photocouplers and for IFT on S C R , Triac-type photocouplers. Product indications corresponding to rank names are as show n below.


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    tlp121optocoupler tl 521p621 optocoupleroptocoupler p621+7all transistor p621p626 transistortransistor p621optocoupler p 521tlp639p621 toshibatransistor marking p6 PDF

    Contextual Info: STA3360PI PNP Silicon Transistor Applications PIN Connection • Power am plifier applicat ion • High current swit ching applicat ion Features • Low sat urat ion volt age : VCE sat = - 0.15V Typ. @ I C= - 1A, I B= - 50m A • Large collect or current capacit y: I C= - 3A


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    sta3360pio-220f-3lsta3360sdb20d45+1ksd-t0o109-000 PDF

    Contextual Info: 2SA1980E PNP Silicon Transistor PIN Connection Description • General sm all signal am plifier Features 3 • Low collect or sat urat ion volt age : VCE sat = - 0.3V( Max.) • Low out put capacit ance : Cob = 4pF( Typ.) • Com plem ent ary pair wit h 2SC5343E


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    2sa1980e2sc5343eot-523ksd-t5e007-000 PDF

    Contextual Info: STC2073D NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) TO-252


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    stc2073do-252stc2073ksd-t6o038-001 PDF

    SDB20D

    Contextual Info: STD13005F NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed swit ching • VCEO sus = 400V • Suit able for Swit ching Regulat or and Mot or Cont rol PIN Connection C B Ordering Information Type N O. M a r k ing Pa ck a ge Code


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    std13005fstd13005sdb20d45ksd-t0o020-005+1sdb20d PDF

    Contextual Info: STD13005IS NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed swit ching  VCEO sus = 400V  Suit able for Swit ching Regulat or and Mot or Cont rol PIN Connection C B Ordering Information Type N O. M a r k ing Pa ck a ge Code


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    std13005isstd13005istd13005ksd-t6q012-001 PDF

    Contextual Info: SUT390J Epitaxial planar NPN silicon transistor Description • Com plex t ype bipolar t ransist or Feature • Sm all package save PCB area • Reduce quant it y of part s and m ount ing cost • Two SBT3904 chips in SOT- 363 package Package : SOT-363 Ordering Information


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    sut390jsbt3904ot-363ksd-t5s009-002 PDF

    a5 TRANSISTOR

    Abstract: transistor T2S MARKING CODE ARF A5A marking transistor A5 MG11A marking code ER transistor
    Contextual Info: UM A5 N / FM A5A Transistors U M G 11N / F M G 11A I Digital Transistor Dual Digital Transistors for Inverter Driver UMA5N / FMA5A I Absolute maximum ratings (Ta=25'C) •Features 1 ) Tw o D T A 123J transistors are housed in a U M T o r S M T package. Parameter


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    taab25100mhz94s-813-c123jumg11n+7a5 transistortransistor t2smarking code arfa5a markingtransistor a5mg11amarking code er transistor PDF

    PPC5001T

    Abstract: PQC5001T
    Contextual Info: 7 - 3 3 'Q 5 PPC5001T PQC5001T P H ILIP S in t e r n a t io n a l •SbE D ■ 711002b D04bl+2E ISO IPHIN MICROWAVE POWER TRANSISTORS NPN silicon p ow er tra n sisto r fo r use in a co m m o n -co lle cto r o s c illa to r c ircu its in m ilita ry and professional applications.


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    7-33-q5ppc5001tpqc5001t711dfl2b+3004bit-33-05711002b PDF

    Contextual Info: DN500 Semiconductor NPN Silicon Transistor Description • Ext rem ely low collect or- t o - em it t er sat urat ion volt age VC E( S A T = 0.2V Typ. @I C / I B = 3A/ 150m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP500


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    dn500dp500kst-9086-002 PDF

    Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code


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    dp500dn500kst-9091-003-500m+1-150m PDF

    Contextual Info: STD129 Semiconductor NPN Silicon Transistor Description • Ext rem ely low collect or- t o - em it t er sat urat ion volt age VC E( S A T = 0.2V Typ. @I C / I B = 3A/ 150m A) • Suit able for low volt age large current drivers • Switching Application


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    std129kst-9060-001 PDF

    C3906K

    Abstract: C4102
    Contextual Info: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.


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    2sa15792sa1514k2sc41022sc3906k+5--120v--50mac4102/2sc3906kc4102 PDF

    144T

    Contextual Info: IMD8A IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive IMD8A •F eatures 1 ) DTA144T and DTC144T transistors are housed in a SMT package. •A b s o lu te maximum ratings (Ta=25°C) Param eter •C irc u it schematic Symbol


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    dta144tdtc144t200mwta--25+294s-904-ac144t PDF

    marking 31A sot-23

    Abstract: marking 31A BFQ31 marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH
    Contextual Info: FERRANTI * semiconductors BFQ31 BFQ31A NPN Silicon Planar V H F /U H F Transistors DESCRIPTION These devices are intended fo r lo w noise, high frequency am plifier and o scillator applications. Encapsulated in the popular SOT-23 package these devices are designed sp ecifically fo r use in thin and thick film


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    bfq31bfq31aot-23bfq31/bfq31a+14fmmt-a13fmmt-a14bcw67afmmt-a20bcw67bmarking 31a sot-23marking 31amarking 31a sotbfq31arbfq31rbf031ac5 marking codedevice marking code s4sot23 marking bh PDF

    C5053

    Contextual Info: 2SA1900 2SC5053 Transistors I Medium Power Transistor -5 0 V , — 1A 2SA1900 • Features ^Absolute maximum ratings (Ta=25"C ) 1 ) Low VcEisat). (Typ. —0.15V at 1c/! b = — 5 0 0 /—50m A) 2 ) Pc = 2W (CM 40 X 40 X 0.7 mm ceramic board.) 3 ) C om plem ents the 2S C5053.


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    2sa19002sc5053/--50mc5053 PDF

    PUMT1

    Contextual Info: Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES PUMT1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.


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    sc-88ot363pumt1 PDF