MARKING CODE E4 NPN Search Results

LDTD113EWT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD113EWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features Mechanical Data • • BVCEO > 50V IC = 4A Continuous Collector Current • Case: U-DFN2020-3 Type B • • • Low Saturation Voltage 100mV max @1A RSAT = 68 mΩ for a Low Equivalent On-Resistance

2561a

Abstract: NEC 2561A 2561A NEC NEC 2561A w PS2561A-1 PS2561AL-1 PC 2561A E4 mark NEC 2561A circuit PS2561AL1-1
Contextual Info: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES FEATURES • HIGH ISOLATION VOLTAGE: BV = 5 000 Vr.m.s. PS2561A-1 PS2561AL-1 PS2561AL1-1 PS2561AL2-1 DESCRIPTION NEC’s PS2561A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

ZXTN618MATA

Abstract: DFN2020B-3 ZXTN618MA
Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 20V RSAT = 47 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance

ZXTN

Abstract: DFN2020B-3 ZXTN620MA ZXTN620MATA
Contextual Info: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 80V RSAT = 68 mΩ IC = 3.5A Continuous Collector Current Low Equivalent On Resistance

ZXTN617MATA

Abstract: DFN2020B-3 ZXTN617MA
Contextual Info: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 15V RSAT = 45 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance

ZXTN619MATA

Abstract: ZXTN619MA DFN2020B-3 marking code E4 NPN
Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 50V RSAT = 68 mΩ IC = 4A Continuous Collector Current Low Equivalent On Resistance

SUT041C

Contextual Info: SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8M Package TESOP-8M Ordering Information

Contextual Info: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability

2N3700 Equivalent transistor

Abstract: 2n3019 transistor 23/1N647-1 JANTXV
Contextual Info: 2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications.

Contextual Info: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A

DFN2020B-3

Abstract: ZXTN617MA ZXTN617MATA sot23 transistor marking y2
Contextual Info: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 15V IC = 4.5A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 15V IC = 4.5A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A

ZXTN618MATA

Abstract: DFN2020B-3 ZXTN618MA ZXTN
Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A

Contextual Info: SPICE MODEL: BC847CDLP BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

Contextual Info: BC847CDLP N EW PRODU CT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

DFN1310H4-6

Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

BC847CDLP-7

Abstract: DFN1310H4-6 BC847CDLP
Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

PS2503-2

Abstract: PS2503-4 PS2503L-1 PS2503L-1-E3 PS2503L-2 PS2503L-2-E3 PS2503-1 PS2503-2-A
Contextual Info: PHOTOCOUPLER PS2503-1,-2,-4,PS2503L-1,-2,-4 LOW INPUT CURRENT, HIGH SPEED SWITCHING −NEPOC MULTI PHOTOCOUPLER SERIES Series− DESCRIPTION The PS2503-1, -2, -4 and PS2503L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

Contextual Info: SIEMENS PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 NPN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration