MARKING CODE DIODE R1 Search Results

erc06

Abstract: A537 A536
Contextual Info: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7- 3 —K : S : Blue High voltage by mesa design. Color code High reliability Abridged type name : Applications <T3 - C">

SCHOTTKY DIODE SOT-143

Abstract: diode marking 74 schottky marking code PD
Contextual Info: Central Sem iconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CMFSH-3i type is a Silicon Dual Isolated Schottky diode designed for surface mount fast switching appIications requ iring a low forward vo Itage drop. Marking Code is C3l. MAXIMUM RATINGS TA=25°C

ERB83-006

Abstract: marking JSs s1nl R20 marking JE55
Contextual Info: ERB83-006 2A : Outline Drawings S C H O TTK Y BARRIER DIODE 1 Features • <svF : Marking Low Vi S 7 - 3 - K : It Super high speed switching. Color code : >iu<- High reliability by planer design. Abridged type name * v-Kt - î C a th o d e m o rk • £ ! & : Applications

Contextual Info: ERB06HA : Outline Drawings FAST RECOVERY DIODE Mft-Bk •Features • t ) ? —TV£* |fg?jv : Marking M ost suitable fo r co lo r T .V . dam per • w r t m z V M E . ir 'f a ' * 7- 3- K : ft High voltage by mesa design. Color code : Blue • B it CD High reliability

Contextual Info: LMN400B01 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR Product Summary Features Reference Device Type R1 NOM R2 (NOM) R3 (NOM) Q1 PNP Transistor 10K 220 Q2 N-MOSFET ⎯ ⎯ ⎯ 37K • • • • • Figure 2 2 Description

GDFP1-G10

Abstract: E418 qml38535 qml-38535 Defense/GDFP1-G10
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device types 02 through 06. Add vendor CAGE 64155. Change CAGE code to 67268. 88-06-28 M. A. FRYE B Changes in accordance with N.O.R. 5962-R104-94. 94-02-24 M. A. FRYE C Add case outline Y. Make changes to 1.2.2, 1.3, 3.2.1, figure 1, and figure 2.

smd diode 1016

Abstract: diode T31 Marking marking code B0 SMD diode smd diode bd N-Channel MOSFET 200v smd diode marking code jl an
Contextual Info: PD-9.1090 International Ie?r1Rectifier IRL640S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V Fast Switching

C705A

Abstract: marking codes pd C705C CMPD7005 CMPD7005A CMPD7005C CMPD7005S marking code diode R1
Contextual Info: Y RCMPD7005 A IN IM EL Central CMPD7005A CMPD7005C CMPD7005S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7005, CMPD7005A, CMPD7005C and CMPD7005S are silicon switching diodes with various diode configurations, manufactured by the epitaxial

Schottky Diode Marking C3

Abstract: diode ring mixer phase detector "Schottky Barrier Diodes" c5 marking code sot-323 marking code C9 MARKING SOT-143 C5 c5 mark sot HSMS-2822 marking code tc sot 363 HSMS-2827 HSMS-2827-TR1 C7
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Unique Configurations in

variable power divider

Abstract: circuit and working lcr meter 282P diode ring mixer phase detector HSMS-282K small signal low leakage fast epitaxial diode 282R SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Unique Configurations in

282P

Abstract: variable power divider HSMS-282K HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Unique Configurations in

5962-8983002

Abstract: 5962-R119-92 QML-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R119-92. 92-02-12 M. A. Frye B Add device types 02, 03, and 04. Changes in table I and figure 1. Editorial changes throughout. 93-05-26 M. A. Frye C Changes in accordance with NOR 5962-R010-94.

6c1 diode

Abstract: marking code diode R1 CMSD6001 CMSD6001A CMSD6001S diode Marking Code 65 marking pd PA marking code CMSD6001C marking Ja diode
Contextual Info: CMSD6001 CMSD6001A CMSD6001C CMSD6001S SURFACE MOUNT LOW LEAKAGE SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD6001 SERIES are silicon switching diodes manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: Wha% HEW LETT* WlltM PA CKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

Contextual Info: IRLR9343 IRLU9343 IRLU9343-701 D-Pak IRLR9343 Features I-Pak IRLU9343 D Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

282P

Abstract: HSMS-282K common base mixer circuit analysis Agilent Marking I0 variable power divider
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Unique Configurations in

Contextual Info: IRLR2908 IRLU2908 I-Pak IRLU2908 D-Pak IRLR2908 Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l Description The D-Pak is designed for surface mounting

DIODE S45

Abstract: BAS40ADW BAS40CDW BAS40SDW BAS40TW SC70-6L DIODE S43 S44 MARKING marking s43 marking S45
Contextual Info: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA

S45 marking

Abstract: marking S45 DIODE S45 MARKING CODE R7 marking code S44 BAS40SDW BAS40RDW MARKING CODE R7 DIODE marking ADW BAS40CDW
Contextual Info: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA

IRLR9343

Abstract: IRLU9343 IRLU9343-701
Contextual Info: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

irlru9343

Abstract: IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B
Contextual Info: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

Contextual Info: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

IRLR4343

Abstract: IRLU4343 IRLU4343-701
Contextual Info: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency