MARKING CODE DIODE D6 Search Results

MIXA151W1200EH

Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Contextual Info: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

MIXA61H1200ED

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

D6SB 80 5

Abstract: D6SB80 marking diode 6a 20/D6SB 80
Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D6SB80 Unit : mm Weight : 6.3g （typ.） Package：5S 800V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

101W1200EH

Abstract: D434
Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

D6 TRANSISTOR MARKING

Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: + • SPT IGBT technology • low saturation voltage

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

D6SBN20

Abstract: a3120 3120A
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

VUI72-16NOXT

Abstract: vui72-16 VUI72 215 dc brake rectifier motor VUI72-1 72-16NOXT vui three phase bridge ixys vui72-16no 9V bridge rectifier ic VUI72-16N
Contextual Info: VUI 72-16NOXT Three Phase Rectifier Bridge VRRM = 1600 V IdAVM = 110 A with Brake IGBT Part name Marking on product VUI72-16NOXT 6 11 D1 12 5 1 ˙NTC D3 D5 4 2 11 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 E72873 10 Features: Application: Package: • Three phase mains rectifier

D6SB 80 5

Abstract: 600V-6A D6SB60L d6sb 60l
Contextual Info: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 管理番号（例） Control No. 品名 Type No. 特長 D6SB 60L 0264

Contextual Info: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4

VUB72-12NOXT

Abstract: VUB72-16NOXT ixys vub 70 215 dc brake rectifier motor VUB72-12 vub 70 -16
Contextual Info: VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM = 1200/1600 V IdAVM = 110 A with Brake Chopper Part name Marking on product VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package:

Contextual Info: MWI 75-12T7T IC25 = 110 A VCES = 1200 V VCE sat typ. = 1.7 V Six-Pack Trench IGBT Part name (Marking on product) MWI 75-12T7T 15, 16 25, 26 D1 T1 17 D3 1 5 2 6 T3 D5 9 T5 10 23, 24 21, 22 19, 20 NTC E72873 Pin coniguration see outlines. D2 18 3 D4 T2 4 D6

M99A

Abstract: DMA90U1800LB
Contextual Info: DMA 90U1800LB Three Phase Rectifier Bridge VRRM = 1800 V Id AV M = 99 A IFSM = 320 A ISOPLUS Surface Mount Power Device DC+ L1 L2 L3 D1 D2 D3 L1 L2 L3 E72873 D4 D5 D6 DC+ DC- DC- Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 1800 V 38

Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:

G4EU

Abstract: ic MARKING QG E72873 DIODE T6 marking
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

Contextual Info: D6XBA40 . D6XBA100 6.0 Amp. Glass Passivated Single Phase In Line Bridge Rectifier IN LINE BIG ~ ~ Current 6.0 A Voltage 400 V to 1000 V FEATURES • UL recognition file number E320541 • Ideal for printed circuit board • High case dielectric strength of 2000 Vrms

Contextual Info: D6XBA40 . D6XBA100 6.0 Amp. Glass Passivated Single Phase In Line Bridge Rectifier IN LINE BIG ~ ~ Current 6.0 A Voltage 400 V to 1000 V FEATURES • UL recognition file number E320541 • Ideal for printed circuit board • High case dielectric strength of 2000 Vrms

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

A96V

Abstract: Si2326DS
Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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