MARKING CODE DIODE D6 Search Results

MIXA151W1200EH

Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Contextual Info: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

MIXA61H1200ED

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

D6SB 80 5

Abstract: D6SB80 marking diode 6a 20/D6SB 80
Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D6SB80 Unit : mm Weight : 6.3g （typ.） Package：5S 800V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

101W1200EH

Abstract: D434
Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

MIEB101W1200EH

Abstract: 101W1200EH
Contextual Info: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology

D6SBN20

Abstract: a3120 3120A
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

VUI72-16NOXT

Abstract: vui72-16 VUI72 215 dc brake rectifier motor VUI72-1 72-16NOXT vui three phase bridge ixys vui72-16no 9V bridge rectifier ic VUI72-16N
Contextual Info: VUI 72-16NOXT Three Phase Rectifier Bridge VRRM = 1600 V IdAVM = 110 A with Brake IGBT Part name Marking on product VUI72-16NOXT 6 11 D1 12 5 1 ˙NTC D3 D5 4 2 11 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 E72873 10 Features: Application: Package: • Three phase mains rectifier

D6SB 80 5

Abstract: 600V-6A D6SB60L d6sb 60l
Contextual Info: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 管理番号（例） Control No. 品名 Type No. 特長 D6SB 60L 0264

Contextual Info: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4

VUB72-12NOXT

Abstract: VUB72-16NOXT ixys vub 70 215 dc brake rectifier motor VUB72-12 vub 70 -16
Contextual Info: VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM = 1200/1600 V IdAVM = 110 A with Brake Chopper Part name Marking on product VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package:

DMA90U1800LB

Contextual Info: DMA 90U1800LB VRRM = 1800 V Id AV M = 99 A IFSM = 320 A Three Phase Rectiier Bridge ISOPLUS Surface Mount Power Device L3 DC+ E72873 L2 D1 D2 D3 L1 L1 L2 L3 D4 D5 D6 DC+ DC- DC- Features Rectiier Bridge Conditions Maximum Ratings VRRM TC = 80°C, sinde 180° (per diode)

M99A

Abstract: DMA90U1800LB
Contextual Info: DMA 90U1800LB Three Phase Rectifier Bridge VRRM = 1800 V Id AV M = 99 A IFSM = 320 A ISOPLUS Surface Mount Power Device DC+ L1 L2 L3 D1 D2 D3 L1 L2 L3 E72873 D4 D5 D6 DC+ DC- DC- Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 1800 V 38

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

A96V

Abstract: Si2326DS
Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

diode D83

Abstract: D83 - 004 d83 004 diode D83 004 D22 diode marking code r63400 D51X d95-3000 D93G D75-1100
Contextual Info: T W L À M I N A S J EN ISO 9001:2000 v^Z ertifik a t: 75 .1 0 0 .6 7 3 TUV Rheinland InterCert SEMICONDUCTOR POWER DEVICES DIODES , €UROPRODUKT 2004 Marking D61D - 250 - 22 - N O -Œ D -D special requirements and selections code external leads code base code for stud types letter sign

Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

ZENER A24

Abstract: transistor a110 LR35144 A220 zener diode a24 relay 240v 10a pcb RU coil DC 12v latching RELAY 4PDT 12V A110 EN61810-1
Contextual Info: Relays & Sockets RU Series Full featured universal miniature relays Designed with environment taken into consideration • • • • • • • • • Display Lights Switches & Pilot Lights RU Series Universal Relays Two terminal styles: plug-in and PCB mount

d6sb 60l

Contextual Info: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 管理番号（例） Control No. 品名 Type No. 特長 D6SB 60L 0264

diode SOD-323

Abstract: marking Ja diode CMDD6263 marking r2 diode marking D63
Contextual Info: Central CMDD6263 TM Semiconductor Corp. SUPERminiTM HIGH VOLTAGE SCHOTTKY DIODE FEATURES: • HIGH VOLTAGE 70V • LOW FORWARD VOLTAGE • PART OF CENTRAL'S SPACE SAVING SUPERmini SURFACE MOUNT PACKAGE FAMILY SOD-323 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6263 is a High Voltage, low VF, Silicon Schottky diode in a

A102

Abstract: APM4220 APM4220KA
Contextual Info: APM4220KA N-Channel Enhancement Mode MOSFET Features • Pin Description D8 D7 D6 D5 25V/16A, RDS ON =7.5mΩ(typ.) @ VGS=10V • • • • S1 S2 S3 G4 RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated SOP−8 Exposed Reliable and Rugged

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents