MARKING CODE D1 CR Search Results
MARKING CODE D1 CR Result Highlights (3)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TC4511BP | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet | ||
| 68305-001LF | Amphenol Communications Solutions | Din Accessory Coding | |||
| 65197-001LF | Amphenol Communications Solutions | Din Accessory Coding Part |
MARKING CODE D1 CR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si5902DC
Abstract: Si5902DC-T1 marking code ca
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si5902dcsi5902dc-t1s-21251--rev05-aug-02+1 | |
Si5902DC
Abstract: Si5902DC-T1
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Original |
si5902dcsi5902dc-t118-jul-08 | |
Si5902DCContextual Info: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code |
Original |
si5902dcs-62424--rev04-oct-99 | |
ChipFET
Abstract: Si5904DC Si5904DC-T1
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Original |
si5904dcsi5904dc-t1s-21251--rev05-aug-02+1 | |
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Contextual Info: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code |
Original |
si5902dcs-62424--rev04-oct-99 | |
vishay MOSFET code markingContextual Info: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code |
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si5902dcsi5902dc-t108-apr-05vishay mosfet code marking | |
f 0472 N-Channel MOSFET
Abstract: si5980
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si5980du2002/95/ecsi5980du-t1-ge318-jul-08+2 | |
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Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1 |
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si5980du2002/95/ecsi5980duelectronic2011/65/eu+2 | |
Si5904DCContextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability |
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si5904dcs-61855--rev04-oct-99 | |
Vishay DaTE CODE 1206-8Contextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability |
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si5904dcs-61855--rev04-oct-99vishay date code 1206-8 | |
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Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 S1 S2 1206-8 ChipFETr 1 S1 D1 G1 G1 D1 G2 S2 D2 Marking Code |
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si5933dcsi5933dc-t1si5933dc-t1--e3s-40932--rev+1 | |
Si5905DC
Abstract: Si5905DC-T1 MARKING CODE DB
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Original |
si5905dcsi5905dc-t1s-21251--rev05-aug-02+1 | |
ChipFET
Abstract: Si5933DC Si5933DC-T1
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si5933dcsi5933dc-t1s-21251--rev05-aug-02+1 | |
Si5975DC
Abstract: Si5975DC-T1
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si5975dcsi5975dc-t1s-21251--rev05-aug-02 | |
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Si5903DC
Abstract: Si5903DC-T1
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si5903dcsi5903dc-t108-apr-05 | |
Si5905DC
Abstract: Si5905DC-T1
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Original |
si5905dcsi5905dc-t118-jul-08 | |
Si5975DC
Abstract: Si5975DC-T1
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Original |
si5975dcsi5975dc-t118-jul-08 | |
Si5903DC
Abstract: Si5903DC-T1
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Original |
si5903dcsi5903dc-t118-jul-08 | |
71054
Abstract: Si5903DC Si5903DC-T1
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Original |
si5903dcsi5903dc-t1s-21251--rev05-aug-02+1 | |
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Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code |
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si5905dcsi5905dc-t108-apr-05 | |
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Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code |
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si5980du2002/95/ecsi5980dullectual18-jul-08 | |
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Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code |
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si1902dlot-363sc-70s-03969--rev+1 | |
Si1902DL SOT-363
Abstract: marking code pa Si1902DL "marking code PA"
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Original |
si1902dlot-363sc-70s-21374--rev+3 | |
71080
Abstract: Si1902DL
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si1902dlot-363sc-70s-20880--rev+2 | |