MARKING CODE CGB Search Results

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q68000-A8370

Abstract: CGY MW
Contextual Info: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215

P-SOT-143

Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Contextual Info: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1

4456-P

Contextual Info: In fineon ♦s*î hno!09 CGB 91 GaAs MMIC Target Data Sheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit • Power down control • CMOS- switchable high/low-power mode

mmic h2

Abstract: Marking code CGB
Contextual Info: In fineon tec hn c ! o g ies GaAs MMIC CGB 191 Target Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDM A and WCDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode

smd code marking book

Abstract: smd code book marking code H2 SMD GPS09230 Marking code CGB
Contextual Info: GaAs HBT CGB 90 Preliminary Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Simple input and output match on PCB

smd code book

Abstract: GPS09230 tdma block diagram Q62702-G0113
Contextual Info: GaAs HBT CGB 190 Preliminary Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones. Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Simple input and output match on PCB

murata COG capacitor

Abstract: CGB241 capacitor 22 pf MARKING pg SMA
Contextual Info: CGB 241 Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency

50 ZL 220

Contextual Info: GaAs MMIC CGB 240 Preliminary Data Sheet • 2 stages Bluetooth InGaP HBT-Power Amplifier • Single Voltage Supply • Operating voltage range: 2.0 to 6 V • POUT = 23 dBm at VD = 3.2 V • Overall power added efficiency up to 50% • 4 Power Steps Analog Power Control

VQFN24

Abstract: rf channel trap circuit CGB191 marking gain stage GaAs MMIC AMPLIFIER VQFN-24
Contextual Info: GaAs MMIC CGB191 Target Datasheet • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones • Integrated temperature compensated bias circuit

29dBm

Abstract: CGB191 Q62702-G0131 VQFN24 rf channel trap circuit
Contextual Info: GaAs MMIC CGB191 Target Datasheet • • • • • ESD: HBT power amplifier for 1900 MHz CDMA, TDMA portable cellular phones Integrated temperature compensated bias circuit

marking code C3 SMD ic

Abstract: GVQ09253 Q62702-G0131 smd power amplifier H2 MARKING CODE
Contextual Info: GaAs MMIC CGB 191 Target Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match

MMIC marking CODE c4

Contextual Info: GaAs MMIC CGB 241 Target Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V

Contextual Info: GaAs MMIC CGB 241 Target Datasheet • • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

JUMPER-0603

Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
Contextual Info: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V

Contextual Info: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match

VQFN24

Abstract: CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73
Contextual Info: GaAs MMIC CGB91 Target Datasheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit

GVQ09253

Contextual Info: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match

TriQuint PACKING

Abstract: AVX CGB marking code murata label CGB241 AVX COG Capacitor schematic diagram of bluetooth device
Contextual Info: CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency (typically 50%) and single positive supply operation makes

Contextual Info: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

mira

Abstract: INFINEON package PART MARKING CC 0603 COG
Contextual Info: Infineon ♦s í h « c l o n i e s CGB 240 GaAs MM 1C Preliminary Data Sheet • 2 stages Bluetooth InGaP HBT-Power Amplifier • Single Voltage Supply • • Operating voltage range: 2.0 to 6 V p QUT = 23 dBm at VD = 3.2 V • Overall power added efficiency up to 50%

Contextual Info: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V