MARKING CODE C73 Search Results

B90P06

Abstract: MTB9
Contextual Info: Spec. No. : C733J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB90P06J3 BVDSS -60V ID -10A RDSON MAX 90.8mΩ Features • Low Gate Charge • Simple Drive Requirement

BB0P10

Abstract: MTBB0P10J3
Contextual Info: Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -10A RDSON MAX 205mΩ Features • Low Gate Charge • Simple Drive Requirement

C734

Abstract: IR 2638
Contextual Info: Spec. No. : C734J3 Issued Date : 2009.07.09 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB12P04J3 BVDSS -40V ID -25A RDSON MAX 12.6mΩ Features • Low Gate Charge • Simple Drive Requirement

BA5N10

Abstract: MTBA5N10J3 TO-252 MOSFET p channel C731J3
Contextual Info: Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10J3 BVDSS 100V ID 10A RDSON MAX 150mΩ Features • Low Gate Charge • Simple Drive Requirement

B12N03

Abstract: MTB12N03Q8
Contextual Info: CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB12N03Q8 BVDSS ID RDSON max 30V 12A 11.5mΩ Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

DIMD10A-7

Abstract: DIMD10A
Contextual Info: SPICE MODEL: DIMD10A DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00

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Abstract: DIMD10A-7
Contextual Info: DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free By Design/RoHS Compliant Note 1

marking code c73

Abstract: go c73
Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic

Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW P ROD RODUCT UC T Features • • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free/RoHS Compliant Note 1 "Green" Device (Note 3 and 4)

Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Also Available in Lead Free Version A C2 · · · · · E1 B C Mechanical Data

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Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic

C2 marking code

Abstract: J-STD-020A MIMD10A MIMD10A-7
Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT SPICE MODELS: MIMD10A NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free Product A C2 · · · · E1 B C Mechanical Data

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Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT SPICE MODELS: MIMD10A NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Also Available in Lead Free Version A C2 · · · ·

dimd10a

Abstract: DIMD10A-7 go c73 75C13
Contextual Info: SPICE MODEL: DIMD10A DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free By Design/RoHS Compliant Note 1

MIMD10A

Abstract: MIMD10A-7 k m marking
Contextual Info: SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A Built-In Biasing Resistors C2 One 500mA PNP and One 100mA NPN E1 Available in Lead Free/RoHS Compliant Version Note 2

Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic

CMLDM7003E

Abstract: CMLDM7003J CMLDM7003 CMLDM7003JE marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73
Contextual Info: Central CMLDM7003E CMLDM7003JE Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel

J-STD-020A

Abstract: MIMD10A MIMD10A-7-F
Contextual Info: SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A Built-In Biasing Resistors C2 SOT-363 B1 E1 One 500mA PNP and One 100mA NPN B C Lead Free/RoHS Compliant Note 1

Contextual Info: DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN SC-74R A CXX YM Mechanical Data · · · · · Case: SC-74R, Molded Plastic

marking C73

Contextual Info: DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN SC-74R A CXX YM Mechanical Data · · · · · Case: SC-74R, Molded Plastic

CMLDM7003E

Abstract: CMLDM7003JE CMLDM7003J
Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel

sot transistor pinout

Abstract: CMLDM7003E CMLDM7003JE C73 MARKING CODE 10 marking code dual transistor
Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

CMLDM7003E

Contextual Info: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current