MARKING CODE C2 AMPLIFIER Search Results

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

Contextual Info: BC857BS 45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Ultra-Small Surface Mount Package • • Ideally Suited for Automated Insertion • • For switching and AF Amplifier Application • Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

pnp k3w

Abstract: BC857BSQ-7-F
Contextual Info: BC857BS DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Ideally Suited for Automated Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package “Lead-Free”, RoHS Compliant Note 1

SOT363 6 BC847BS

Contextual Info: BC847BS DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Ultra-Small Surface Mount Package   Ideally Suited for Automated Insertion   For switching and AF Amplifier Application  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

SMD INDUCTOR marking code C4

Abstract: national marking code national semiconductor part marking NATIONAL SEMICONDUCTOR MARKING TYPE national marking date code 1505 marking NR3015 C1005X5R1A104KT an-1505 national LM3207TL
Contextual Info: National Semiconductor Application Note 1505 Jeffrey Colwell July 2007 Introduction tegrated LDO with a nominal has a maximum Iref of 10 mA. See Ordering Information table on page 2 for Voltage Options. The LM3207 offers superior performance for powering WCMDA / CDMA RF power amplifiers and similar applications.

S6419

Contextual Info: Low Power Audio Amplifier Semiconductor S6419/P Description http:// www.auk.co.kr The S6419/P is a low power audio amplifier integrated circuit, intended for the communication applications, such as in speakerphones. It provides differential speaker outputs to

MLX90242LUA-GAA-000

Abstract: smd hall effect sensor 175 hall sensor MLX90242 smd code 24 hall effect smd marking CODE WB 12 SMD 6 PIN IC MARKING CODE SE marking code WW SMD
Contextual Info: MLX90242 Linear Hall Effect Sensor Features and Benefits Quad Switched Hall Plate / Chopper Stabilized Amplifier Ratiometric Output for A/D Interface Low Quiescent Voltage Thermal Drift Small Plastic Packages TSOT, TO-92 RoHS compliant TSOT package Applications

Contextual Info: Low Power Audio Amplifier Semiconductor S6419/P Description http:// www.auk.co.kr The S6419/P is a low power audio amplifier integrated circuit, intended for the communication applications, such as in speakerphones. It provides differential speaker outputs to

Contextual Info: TS34119 Low Power Audio Amplifier SOP-8 DIP-8 Pin assignment: 1. CD 8. VO2 2. FC2 7. Gnd 3. FC1 6. Vcc 4. Vin 5. VO1 General Description The TS34119 is a low power audio amplifier, it integrated circuit intended primarily for telephone applications such

A07 RF Amplifier

Abstract: audio amplifier SOP RF AMPLIFIER marking A07 TS34119CS 27BSC TS34119 TS34119CD power audio amplifier design
Contextual Info: TS34119 Low Power Audio Amplifier SOP-8 DIP-8 Pin assignment: 1. CD 8. VO2 2. FC2 7. Gnd 3. FC1 6. Vcc 4. Vin 5. VO1 General Description The TS34119 is a low power audio amplifier, it integrated circuit intended primarily for telephone applications， such

Contextual Info: BFR193L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz 3
For linear broadband amplifiers
fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

marking FA

Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

K1F transistor

Abstract: marking k1f
Contextual Info: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic

K1F transistor

Abstract: BC847BS BC847BS-7 J-STD-020A
Contextual Info: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic

SOT363 6 BC847BS

Abstract: K1F transistor
Contextual Info: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic

Circuit diagram of 12v 1W LED driver

Abstract: led 3w 12v 4148 diode 3W LED
Contextual Info: Advanced Power Electronics Corp. Preliminary APE1831/A 1A, 0.25V FEEDBACK VOLTAGE STEP-DOWN SWITCHING REGULATORS FOR LED DRIVER GENERAL DESCRIPTION APE1831/A consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS

K1F transistor

Contextual Info: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic

marking FB

Contextual Info: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

marking FA

Abstract: BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BGA825L6S Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.1, 2012-10-17 RF & Protection Devices Edition 2012-10-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

BGA915

Contextual Info: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer