MARKING CODE BV 66 Search Results

R1Q2A7236

Contextual Info: R1Q2A7236 / R1Q2A7218 / R1Q2A7209 Series R1Q2A7236ABG Series R1Q2A7218ABG Series R1Q2A7209ABG Series 72-Mbit QDR II SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

Contextual Info: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG / R1QAA7209ABG R1QDA7236ABG / R1QDA7218ABG / R1QDA7209ABG R1QGA7236ABG / R1QGA7218ABG / R1QGA7209ABG R1QKA7236ABG / R1QKA7218ABG / R1QKA7209ABG

Contextual Info: R1Q4A7236 / R1Q4A7218 / R1Q4A7209 Series R1Q4A7236ABG Series R1Q4A7218ABG Series R1Q4A7209ABG Series 72-Mbit DDRII SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q4A7236 is a 2,097,152-word by 36-bit, the R1Q4A7218 is a 4,194,304-word by 18-bit, and the

Contextual Info: 72QM2 R1Q3A7236 / R1Q3A7218 / R1Q3A7209 Series R1Q3A7236ABG Series R1Q3A7218ABG Series R1Q3A7209ABG Series 72-Mbit QDR II SRAM 4-word Burst Rev. 0.08a 2011.05.23 Description The R1Q3A7236 is a 2,097,152-word by 36-bit, the R1Q3A7218 is a 4,194,304-word by 18-bit, and the

Contextual Info: R1QHA72 / R1QLA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description

Contextual Info: R1QBA72 / R1QEA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description

Contextual Info: R1QAA36*CB* / R1QDA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG

Contextual Info: R1QCA36*CB* / R1QFA36*CB* Series R1QCA3636CBG / R1QCA3618CBG / R1QCA3609CBG R1QFA3636CBG / R1QFA3618CBG / R1QFA3609CBG R1QJA3636CBG / R1QJA3618CBG / R1QJA3609CBG R1QMA3636CBG / R1QMA3618CBG / R1QMA3609CBG

Contextual Info: - 00000.0000.0000.0000.0000-QDRII+_RL20 R1QGA36*CB* / R1QKA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

Contextual Info: R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6A7236ABG R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0179EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous

LM 805 CV

Contextual Info: SMBJ5.0 - SMBJ170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCORPORATED Features • • • • • • 600 W atts Peak Pulse Power Dissipation 5.0 - 1 7 0 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability

Contextual Info: R1QCA72 / R1QFA72 Series R1QCA7236ABB / R1QCA7218ABB R1QFA7236ABB / R1QFA7218ABB 72-Mbit DDRII+ SRAM 4-word Burst R10DS0171EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: R1QCA72 / R1QFA72 Series R1QCA7236ABG / R1QCA7218ABG R1QFA7236ABG / R1QFA7218ABG 72-Mbit DDRII+ SRAM 4-word Burst R10DS0182EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: R1Q6A7236ABB / R1Q6A7218ABB Series R1Q6A7236ABB R1Q6A7218ABB 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0168EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous

Contextual Info: 72DM4 R1Q5A7236ABB / R1Q5A7218ABB Series R1Q5A7236ABB R1Q5A7218ABB 72-Mbit DDRII SRAM 4-word Burst R10DS0167EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

KA7218

Contextual Info: R1Q2A7236ABG / R1Q2A7218ABG / R1Q2A7209ABG Series R1Q2A7236ABG R1Q2A7218ABG R1Q2A7209ABG 72-Mbit QDR II SRAM 2-word Burst R10DS0175EJ0011 Rev. 0.11 2013.01.15 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the

Contextual Info: 72DM4 R1Q5A7236ABG / R1Q5A7218ABG Series R1Q5A7236ABG R1Q5A7218ABG 72-Mbit DDRII SRAM 4-word Burst R10DS0178EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: R1QJA72 / R1QMA72 Series R1QJA7236ABB / R1QJA7218ABB R1QMA7236ABB / R1QMA7218ABB 72-Mbit DDRII+ SRAM 4-word Burst R10DS0174EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

R1Q2A7236ABB

Contextual Info: R1Q2A7236ABB / R1Q2A7218ABB / R1Q2A7209ABB Series R1Q2A7236ABB R1Q2A7218ABB R1Q2A7209ABB 72-Mbit QDR II SRAM 2-word Burst R10DS0164EJ0011 Rev. 0.11 2013.01.15 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the

marking code HFr

Abstract: HEP 311
Contextual Info: 3.0SMCJ SERIES LITE-ON SEMICONDUCTOR Bi-Directional device is under development SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 3000 WATTS FEATURES For surface mounted applications

marking code HFr

Contextual Info: 3.0SMCJ SERIES LITE-ON SEMICONDUCTOR Bi-Directional device is under development SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 3000 WATTS FEATURES For surface mounted applications

Contextual Info: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory