MARKING CODE B1 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

panasonic resistors marking code

Contextual Info: Fixed Resistors Appendix Standard for Resistance Value, Resistance Tolerance and Color Code • Basis Standard IEC Publication 60062: Marking codes for resistors and capacitors. IEC Publication 60063: Preferred number series for resistors and capacitors. JIS C 5062: Marking codes for resistors and capacitors.

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

KSB1121

Abstract: KSD1621
Contextual Info: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code

Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

Contextual Info: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

A 798 transistor

Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

Transistor 1308

Abstract: FJC1308 FJC1963
Contextual Info: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

transistor b1 y 016

Abstract: KSB798
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

FJC1308

Abstract: FJC1963
Contextual Info: FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

Contextual Info: DRC4143X Tentative Total pages page DRC4143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : NS-B1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DRC4124e

Contextual Info: DRC4124E Tentative Total pages page DRC4124E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NE Package Code : NS-B1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: DRA4144W Tentative Total pages page DRA4144W Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LK Package Code : NS-B1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

SDB310D

Abstract: 02 05 000 2501
Contextual Info: SDB310D Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB310D Marking Package Code B1 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

Contextual Info: 2/7 TAI-SAW TECHNOLOGY CO., LTD. SMD 2.0x1.6 26.0MHz Crystal Unit MODEL NO.: TZ1187A REV. NO.: 4 Revise: Rev. Rev. Page Rev. Account Date 3 4 4 4 Change marking code to new form Specify the traceable code 5/1/08’ ECN-2008118 Kelly Huang 3/20/09’ ECN-200900115 Kelly Huang

c2415

Abstract: Q62702-C2415
Contextual Info: BCR 119S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built bias resistor (R1=4.7kΩ) Type Marking Ordering Code Pin Configuration

Q62702-C2377

Abstract: vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
Contextual Info: SIEMENS BCR 183S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, 4 driver circuit 5 6 • Built in resistor R1 = 10kii, R2 = 10k£2 » ^ 3 2 1 Marking Ordering Code Pin Configuration BCR183S WMs CM II CO Q62702-C2377 1=E1 2=B1

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

Contextual Info: BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kΩ) Type Marking Ordering Code Pin Configuration

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

C541U

Abstract: C541U-1E P-SDIP-52
Contextual Info: Microcontrollers Errata Sheet 10 July 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence