MARKING CODE 8FF Search Results

STAC2942F

Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Contextual Info: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

DAC8550

Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

DAC8550

Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

25q80

Abstract: W25Q80B W25Q80BWSNIG W25Q80BWZPIG 0FC000 4x256 A22 MARKING soic8 w25q W25Q80BW
Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: January 26, 2011 Preliminary - Revision A W25Q80BW Table of Contents 1. GENERAL DESCRIPTION . 5

25Q16CVSIG

Abstract: W25Q16C W25Q16CVSSIG 25q16 25Q16CVIG W25Q16CV W25Q16CVSNIG 25q16cvs DSA00916 A1512
Contextual Info: W25Q16CV 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: January 4, 2010 Preliminary - Revision A W25Q16CV Table of Contents 1. GENERAL DESCRIPTION . 5

Contextual Info: MBM29LV800TA-70/-90 MBM29LV800BA-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

MBM29LV800BA-70PFTN

Abstract: MBM29LV800TA-70PFTN MBM29LV800TA-90PFTN WLP 35 SAFETY MBM29LV800BA-90PFTN
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: April 24, 2014 Revision K W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS . 5

SUPER CHIP

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

MBM29LV800TA-70PF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: July 30, 2013 Revision J W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS. 5

W25Q80BWBYIG

Abstract: 896KB W25Q80BW 6X5 TUBE winbond w25q
Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: November 19, 2012 Revision I W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS . 5

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

28F008SA

Abstract: LH28F008SCT-L12 LHF08CH3
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCT-L12 Flash Memory 8M 1M x8 (Model No.: LHF08CH3) Spec No.: EL104164B Issue Date: May 7, 1999 SHARP LHF08CH3 l Handle this document carefully for it contains material protected by international

MBM29LV800TA-70

Abstract: MBM29LV800BA-90PFTN
Contextual Info: MBM29LV800TA -70/-90/ MBM29LV800BA -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV800TA -70/- /MBM29LV800BA Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

FY220

Abstract: FW221 EM28C1602C3FL
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

Contextual Info: F L m A S H M E M O 1 M x R Y 8 /5 1 2 K x 1 6 yMDbA M A O¿ yQ lL V n n Tl i. .0,1.^/AADlJIOO V /Q oUU 2/ M d » LV 80 BIT Wife, , ,., . • FEA TU RES • Single 3.0 V read, program, and erase

Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: September 01, 2014 Revision L W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS . 5

ES651

Abstract: EM28C1604C3FL
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

W25Q80BW

Abstract: 25q80 W25Q80BWSSIG W25Q80BWBYIG W25Q80BWSNIG W25Q80B
Contextual Info: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: June 21, 2012 Preliminary - Revision F W25Q80BW Table of Contents 1. GENERAL DESCRIPTION . 5

AM29F040B date code marking information

Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Contextual Info: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _

Contextual Info: MBM29SL800TD-10/12 MBM29SL800BD-10/12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.