MARKING CODE 8C Search Results

M3-12H

Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
Contextual Info: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.

marking 6a2 smd

Abstract: zener Z11B
Contextual Info: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C

TMPZ5231

Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
Contextual Info: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B

2N3904

Abstract: MMBA812M7 2N3906 TMPT4403 BC818-25 BC818-40 BC848A BC848B BC848C KST06
Contextual Info: Surface Mount General Purpose Transistors hFE Part No., Marking Code and Polarity VC E O NPN BC848A BC848B BC848C BC818-16 BC818-25 BC818-40 MMBTA06 TMPTA06 KST06 MMBTA05 KST05 MMBT100 MMBT2222A TMPT2222A KST2222A MMBT4401 TMPT4401 KST4401 MMBT3903 KST3903

marking 81E

Abstract: TMPZ5231 Zener diode 81A marking 8C marking 8G mmbz52 MMBZ5227B 8B MMBZ5226B MMBZ5227B MMBZ5228B
Contextual Info: SURFACE MOUNT ZENER DIODES MMBZ52-SERIES 350mW Part No. Nominal Dynamic Test Dynamic Test Reverse Test Current Imped. Current Current Voltage Package Ir µA Vr(V) Reel Cross- Marking Zen.Vltg. Imped. Reference Code @ Izt @ Izt Vz(V) Zzt(Ω) @ Izk Izt(mA)

Contextual Info: SIEMENS NPN Silicon AF Transistors • • • • • BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code PinC lonfigur ation

c33725

Abstract: c33740 Bc337
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1

transistor EKs

Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Contextual Info: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

SA SOT-23

Abstract: diode sv 03
Contextual Info: SIPMOS N Channel MOSFET BSS 123 • SIPMOS - enhancement mode • Drain-source voltage Vfci = 100V • Corrtinuous drain current l D = 0.17A • Drain-source on-resistance • Total power dissipation /%* «• = 6.00 PD - 0.36W Type Marking Ordering code for

MMBZ5228B

Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
Contextual Info: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)

BCX12

Abstract: Q62702-C25 AS35b05
Contextual Info: S IE M E N S NPN Silicon A F Switching Transistor • • • • BCX 12 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX 13 PNP Type Marking Ordering Code Pin Configuration 1 2 3 Package1)

zener diode 4.7V

Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Contextual Info: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134

Contextual Info: SIEM EN S PNP Silicon Darlington Transistors • • For general AF applications High collector current • High current gain BCV 28 BCV 48 • Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering Code (tape and reel) Pir Coni igurallion 1 2 3 4

SOT23 marking 828

Abstract: 46 marking
Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3

c81-004

Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Contextual Info: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class

Contextual Info: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks

Contextual Info: 76706 10 0 = - 1 .9 0 (1.3) *U ( ( SIGNAL 2 .2 ) _L 767060X08 YYDDD JJ ._ t ) PART NUMBER & DATE CODE MARKING CIRCUIT BOARD LAYOUT CONNECTOR SIDE NOTES: 1. MATERIALS: CONTACTS - COPPER ALLOY; HOUSING - LIQUID CRYSTAL POLYMER (LCP), UL 94V-0, BLACK. 2. FINISHES: SELECTIVE GOLD (Au) IN CONTACT AREA, SELECTIVE MATTE TIN (Sn) OR TIN/LEAD (Sn/Pb) IN

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

B0947

Abstract: b027 b0914 1225M B0902 LFA30-15B LFJ30-03 marking code ax LFJ30
Contextual Info: LC FILTER-BANDPASS CHIP MONOLITHIC LFA, LFL 8c LFJ Series FEATURES • ■ ■ ■ ■ ■ ■ Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging Reflow solderable Frequency request flexibility Frequency range from 600MHz to 2.5GHz

SOP20

Abstract: SOP20 Package DIP18 DIP-18 8ch DARLINGTON TRANSISTOR ARRAY SOP20 30 pin Package dip18 package diode marking code I5 cmos 40 DARLINGTON TRANSISTOR ARRAY
Contextual Info: S378x 8CH Darlington TR Source Driver Semiconductor http:// www.auk.co.kr Description The S378x Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers.

DIP-18

Abstract: S37703 10 35 SOP DIODE diode marking OX DIP18
Contextual Info: S3770x/P 8CH Darlington TR Sink Driver Semiconductor http:// www.auk.co.kr Description The S3770x Series are high-voltage, high-current Darlington transistor arrays. Each consists of eight NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes

NRF51422

Contextual Info: BAL-NRF01D3 50 ohm balun transformer for 2G45 ISM matched Nordic Semiconductor chips with ultralow power transceivers Datasheet  production data Features • 50  nominal input / conjugate match to Nordic Semiconductor chips nRF24LE1 QFN32, nRF24AP2-1CH, nRF24AP2-8CH, nRF51422

g1va8c

Contextual Info: SIDAC G1V A 8C Absolute Maximum Ratings M 4k U& M M Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage Repetitive Peak On-state Current Critical Rate of Rise of On-state Current ÜÄSlJ • T s tg - 4 0 ~ 125 °C Tj 125 °c