MARKING CODE 76A Search Results

TFK diode 361

Abstract: MARKING ael ERC84-009
Contextual Info: E R C 8 4 - 0 0 9 3 A S ' 3 'y h + — '<i) 7r# ' U i ± 'i 'w m - K '— K • : Outline Drawings SCHOTTKY BARRIER DIODE ■ f t « : Features ■ ^ T js : Marking Low V F 3 - K : ff Color code : Blue Super high speed sw itching. Abridged type n o m e ^

Contextual Info: Chip Resistor Series 712 Package Dimensions Dimensions mm/inch Case Size L W T A 0.85 ± 0.10 0.45 ± 0.05 0603 1.60 ± 0.10 0.063 ± 0.004 0.033 ± 0.004 0.018 ± 0.002 1.30 ± 0.10 0.50 ± 0.05 0805 2.10 ± 0.10 0.083 ± 0.004 0.051 ± .004 0.020 ± 0.002

CTS 750 series

Abstract: 3570 1301 051 94v0 1052 schematic amplify CV 203 TMC 3162 3570 1301 PSA 88C Delco Electronics 3570 1301 151 Delco Electronics 185
Contextual Info: R E S I S T O R P R O D U C T S The CTS Resistor Products Catalog is also on the World Wide Web at www.ctscorp.com. The Web Catalog is updated regularly to provide all customers with the latest information on new products and improvements. You can also contact us at

Contextual Info: V ishay I n t e rt e ch n o l o g y, I n c . Capacitors - High Power Aluminum, Long Life I INNOVAT AND TEC O L OGY 104 PHL-ST N HN VISHAY BCcomponents O 19 62-2012 104 PHL-ST High Power, High Ripple Current, Long Life Aluminum Capacitors with Screw Terminals

130300

Abstract: 15000F
Contextual Info: V i sh ay I n tertech n o l o g y, I n c . Capacitors - Aluminum Electrolytic in Insulated Case I INNOVAT AND TEC O L OGY 500 PGP-ST Series N HN VISHAY BCcomponents O 19 62-2012 500 PGP-ST Series General-Purpose Power Aluminum Capacitors with Screw Terminals

Contextual Info: StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

IRLML6302 marking

Abstract: irlml2402 marking code IRLML2502 IRLML6302 IRLML6401 SOT-23 marking code IRLML6401
Contextual Info: PD - 91259E IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

qtc 2630

Abstract: WEIDMULLER WDU2.5 WAGO 236 404 qtc 2730 W60 065 wago 280-681 entrelec diode WEIDMULLER WAP2.5 WAGO terminal block 281-901 WEIDMULLER SAK2.5
Contextual Info: 1453 Technical portal and online community for Design Engineers - www.element-14.com Connectors - DIN Rail Terminals DIN Rail Enclosures . . . . . . . . . . . . . . . . . . . . . . . . DIN Rail Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . DIN Rail Terminals - Entrelec. . . . . . . . . . . . . . . .

Contextual Info: R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6076ENZ1 Nch 600V 76A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.042W ID 76A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: IRLML6302PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = -20V 3 D

MARKING CODE 76a

Contextual Info: IRF3703PbF TO-220AB Package Outline 10.54 .415 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 4- COLLECTOR

DIODE 76A

Abstract: 035H IRFPE30
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

IR 1838

Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

Contextual Info: PD - 91259G IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -20V G 1 3 D S RDS(on) = 0.60Ω 2 Description

Contextual Info: PD - 91259G IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -20V G 1 3 D S RDS(on) = 0.60Ω 2 Description

IRLML2402

Abstract: IRLML2803 diode code yw
Contextual Info: PD - 96159 IRLML6302GPbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free HEXFET Power MOSFET *  VDSS = -20V  ' 6 

Contextual Info: MA3022M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3022M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

IR 1838 T

Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

MLX90809 PTC04 Software

Contextual Info: MLX90809 Relative Pressure Sensor Features and Benefits Application Examples 1 High accuracy relative pressure sensor +/1.5%FSO 1 Ratiometric Analog Output or digital SENT output 1 Fully integrated IC: MEMS, analog front end circuitry, 16 bit microcontroller, analog back

Contextual Info: International PDS,66! 3X3R Rectifier IR F B F 2 0 S / L p r e l im in a r y HEXFET Power MOSFET • • • • • • • Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature

RE8RB31BU

Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
Contextual Info: global specialist in energy management The architects of efficiency Singapore Mongolia Price List Catalogue 2013 Electrical Distribution, Automation & Control  !
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smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits