MARKING CODE 5A SOP8 Search Results

Contextual Info: RRH050P03 Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

RRH050

Abstract: RRH050P03
Contextual Info: RRH050P03 Datasheet Pch -30V -5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W (5) (6) SOP8 (7) lFeatures (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Contextual Info: RRH050P03 Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W lFeatures SOP8 (7) (5) (6) (8) (4) (3) (1) (2) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

STN9926

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet
Contextual Info: STN9926 Dual N Channel Enhancement Mode MOSFET 5A DESCRIPTION The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

APE1809

Abstract: APE1809X B540
Contextual Info: Advanced Power Electronics Corp. APE1809 PWM Control 5A Step-Down Converter ™ GENERAL DESCRIPTION APE1809 consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal

4953ss

Abstract: MTDP4953Q8 sop8 Package dimension sop-8 582
Contextual Info: CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953Q8 Description The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

MIC38HC4X

Abstract: specification of TL 2N 2222 A APW power supply
Contextual Info: APW38HC42A/3A/4A/5A CMOS Current-Mode PWM Voltage Controller Features • • • General Description Ultralow start-up current 25µA typical The APW38HC4XA family are fixed frequency, high performance, current-mode PWM controller with 1.2 A drive current capability. Undervoltage lockout circuitry allows the APW38HC42A and APW38HC44A

UL94V0

Contextual Info: CYStech Electronics Corp. Spec. No. : C421Q8 Issued Date : 2007.10.12 Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4955Q8 Description The MTDP4955Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

9971

Abstract: MTDN9971Q8
Contextual Info: CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device

APW384XA

Abstract: MIC38HC4X
Contextual Info: APW38HC42A/3A/4A/5A CMOS Current-Mode PWM Voltage Controller Features • • • General Description Ultralow start-up current 25µA typical The APW38HC4XA family are fixed frequency, high performance, current-mode PWM controller with 1.2 A drive current capability. Undervoltage lockout circuitry allows the APW38HC42A and APW38HC44A

Contextual Info: MA4002S10000000 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4002S100 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

apm9946

Abstract: apm*9946 APM9946K 27BSC STD-020C
Contextual Info: APM9946K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 60V/5A, RDS ON =38mΩ(typ.) @ VGS = 10V RDS(ON) =55mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)

4953BDYSS

Abstract: 4953b TF23 MTDP4953BDYQ8
Contextual Info: CYStech Electronics Corp. Spec. No. : C401Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

AO4604

Abstract: 4604 inverter AO4604 SO8 4604 ALPHA SEMICONDUCTOR 4604
Contextual Info: Nov 2002 AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.

B45A06

Abstract: MOSFET 30v sop-8 MTB45A06Q8 MOSFET dual SOP-8
Contextual Info: CYStech Electronics Corp. Spec. No. : C713Q8 Issued Date : 2009.06.02 Revised Date : Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB45A06Q8 BVDSS 60V ID 6A RDSON MAX. 45mΩ Description The MTB45A06Q8 provides the designer with the best combination of fast switching, ruggedized device

AF6930N

Contextual Info: AF6930N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - DC-DC Application - Surface Mount Package - Dual N-channel Device The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

apm9946

Abstract: apm*9946 APM9946K C38M A102 A108 B102 JESD-22
Contextual Info: APM9946K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • D1 D1 D2 D2 60V/5A, RDS ON =38mΩ(Typ.) @ VGS = 10V RDS(ON) =55mΩ(Typ.) @ VGS = 4.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8

JESD22JESD22

Contextual Info: APM6010K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 60V/5A, D D RDS ON =65mΩ (max.) @ VGS=10V RDS(ON)=90mΩ (max.) @ VGS=4.5V • • • S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available

8958C

Abstract: AF8958C N and P MOSFET
Contextual Info: AF8958C P & N-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter

Contextual Info: RRH100P03 Pch -30V -10A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 12.6mW ID -10A PD 2.0W lFeatures SOP8 (7) (5) (6) (8) (4) (3) (1) (2) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

APM4552

Abstract: APM45 apm455
Contextual Info: APM4552K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • D1 D1 N-Channel 30V/7A, D2 D2 RDS(ON) = 23mΩ(typ.) @ VGS = 10V RDS(ON) = 34mΩ(typ.) @ VGS = 4.5V • S1 G1 P-Channel -30V/-5A, S2 G2 RDS(ON) = 46mΩ(typ.) @ VGS =-10V

Contextual Info: RRH100P03 Datasheet Pch -30V -10A Power MOSFET lOutline VDSS -30V RDS on (Max.) 12.6mW ID -10A PD 2.0W (5) (6) SOP8 (7) lFeatures (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

apm4550

Abstract: APM4550K STD-020C
Contextual Info: APM4550K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/7A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -30V/-5A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V

Contextual Info: RRH100P03 Pch -30V -10A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 12.6mW ID -10A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).