MARKING CODE 56M Search Results

Contextual Info: POWER TYPE RESISTORS Metal Glaze ANTI SURGE RCR POWER TYPE RESISTORS STRUCTURE 1 2 3 4 5 6 7 Identification produCt code Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking marking* coating color

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M

C2592

Abstract: Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 marking code AES
Contextual Info: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Ordering Code Pin Configuration

Q62702-C2606

Abstract: c2595 Q62702-C2607 Q62702-C2595 SCT-595 MARKING CODE 56m
Contextual Info: BCP 54M . BCP 56M NPN Silicon AF Transistors 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 51M.BCP 53M PNP 2 1 VPW05980 Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package

Contextual Info: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 1= B 2=C 3= E Package 4 n.c. 5 = C

Contextual Info: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP II LD CO Q62702-A3473 II s1G o SMBTA 06M Pin Configuration CM Ordering Code II Marking 0Û Type Package

Contextual Info: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type

RcR RESISTORS

Contextual Info: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW METAL GLAZE STRUCTURE 1 2 3 4 5 6 7 Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking POWER TYPE RESISTORS ANTI SURGE RCR IDENTIFICATION PRODUCT CODE

RcR RESISTORS

Contextual Info: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW METAL GLAZE STRUCTURE 1 2 3 4 5 6 7 Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking POWER TYPE RESISTORS ANTI SURGE RCR IDENTIFICATION PRODUCT CODE

RcR RESISTORS

Abstract: RCR Resistor vde-reg-nr E159326 CSA-C22 RCR50 RCR60 UL1676
Contextual Info: POWER TYPE RESISTORS Metal Glaze ANTI SURGE RCR STRUCTURE Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking POWER TYPE RESISTORS 1 2 3 4 5 6 7 Identification produCt code coating color RCR16

Q62702-A3474

Abstract: SCT-595
Contextual Info: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 Package 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595

marking code 43a

Contextual Info: DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS ON : • 36mΩ @VGS = -10V • 56mΩ @VGS = -4.5V Low Input/Output Leakage

Contextual Info: DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS ON : • 36mΩ @VGS = -10V • 56mΩ @VGS = -4.5V Low Input/Output Leakage

Contextual Info: DMP2038USS 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT -20V Features and Benefits RDS(ON) max ID max TA = +25°C • Low On-Resistance • Low Gate Threshold Voltage 38mΩ @ VGS = -4.5V -6.5A • Low Input Capacitance 56mΩ @ VGS = -2.5V

Contextual Info: DMP2038USS 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT -20V Features and Benefits RDS(ON) max ID max TA = +25°C • Low On-Resistance • Low Gate Threshold Voltage 38mΩ @ VGS = -4.5V -6.5A • Low Input Capacitance 56mΩ @ VGS = -2.5V

Contextual Info: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package -6.2A 36mΩ @ VGS = -4.5V -20V 56mΩ @ VGS = -2.5V • • • • • • • ID TA = +25°C U-DFN2020-6 Type E -5.0A -4.2A 75mΩ @ VGS = -1.8V 0.6mm profile – ideal for low profile applications

DMP2066UFDE

Contextual Info: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits -20V • • • • • • • ID RDS(on) max TA = 25°C 36mΩ @ VGS = -4.5V -6.2A 56mΩ @ VGS = -2.5V -5.0A 75mΩ @ VGS = -1.8V -4.2A 0.6mm profile – ideal for low profile applications

Contextual Info: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits -20V • • • • • • ID RDS(on) max TA = 25°C 36mΩ @ VGS = -4.5V -6.2A 56mΩ @ VGS = -2.5V -5.0A 75mΩ @ VGS = -1.8V -4.2A Low On-Resistance Low Input Capacitance Fast Switching Speed

Contextual Info: DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package -6.2A 36mΩ @ VGS = -4.5V -20V 56mΩ @ VGS = -2.5V • • • • • • • ID TA = +25°C U-DFN2020-6 Type E -5.0A -4.2A 75mΩ @ VGS = -1.8V 0.6mm profile – ideal for low profile applications