MARKING CODE 3C DIODE SM Search Results

Si1912EDH

Contextual Info: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated

SM305

Contextual Info: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)

IRF5800

Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Contextual Info: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V

gblc

Abstract: Ethernet Control
Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY DESCRIPTION The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY DESCRIPTION The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

zener smd marking 2x

Abstract: 3H DIODE smd smd diode marking 2J smd 27 3e diode sod323 diode marking code 2E 1Z 116 MM3Z10 MM3Z11 MM3Z12 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

GBLC03C

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

diode marking r14

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

smd diode marking 2J

Abstract: 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

3H DIODE smd

Abstract: 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

smd zener diode code 2J

Abstract: Zener diode smd marking code 2A sod323 diode marking code 2E 3H DIODE smd smd diode marking 2J smd diode sod-323 marking code 2j ZENER 2V7 diode smd 3H DIODE SMD CODE MARKING 1e diode zener 8v2
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

STMicroelectronics supressor

Abstract: SMTY18AM
Contextual Info: SMTY18AM LOW FORWARD VOLTAGE TVS: Transky FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High peak pulse power: 400W 8/20µs Stand-off voltage 16V Low forward voltage: 0.48V @ 0.85A @ 25°C Low clamping factor VCL/VBR A K Fast response time Very thin package (1.0mm overall component

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FK8V0303 Silicon N-channel MOS FET For DC-DC Converter circuits • Overview  Package FK8V0303 is N-channel single type small signal MOS FET adopted small size surface mounting package. 

SII907

Abstract: 223S
Contextual Info: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8

Contextual Info: In te rn a tio n a l p d - s i 265h lO R R e c tifi Gf PRELIMINARY IR F 7 5 0 1 HEXFET Power MOSFET • • • • • • • G eneration V Technology Ulrtra Low O n-Resistance Dual N-Channel M O SFET Very Small SO IC Package Low Profile < 1 .1 mm A vailable in Tape & Reel

sot363 marking qs

Contextual Info: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

LD 25 V

Abstract: SM410
Contextual Info: SÌ1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) Id (A) * D S (o n ) ( ^ ) 20 • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.070 @ V GS = 4.5 V

CDSOD323-T05C

Contextual Info: NT IA PL CO M Ro HS * Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones

UC17133

Abstract: UC17131
Contextual Info: UC17131/2/3 UC27131/2/3 UC37131/2/3 Smart Power Switch FEATURES DESCRIPTION • 300mA Continuous Output Current The UC37131, UC37132 and UC37133 are a family of smart power switches which can drive resistive or inductive loads from the high side or low side.

CDSOD323-T05C

Abstract: T18C CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C CDSOD323-T03 CDSOD323-T03C CDSOD323-T05 CDSOD323-TXXC
Contextual Info: T PL IA N M CO * Ro HS Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones

STTH1L06

Abstract: AN1471 STTH1L06A STTH1L06RL STTH1L06U HL6 marking C28D marking code 3c diode smb
Contextual Info: STTH1L06/U/A TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600 V IR (max) 75 µA Tj (max) 175 °C VF (max) 1.05 V trr (max) 80 ns SMB STTH1L06U DO-41 STTH1L06 FEATURES AND BENEFITS • ■ ■ ■ Ultrafast switching