MARKING CODE 3C DIODE SM Search Results

top marking 3c sot23

Abstract: smd code marking sot23 sot-23 pinout diode smd marking code 631 diode SOD-323 Dual Diodes In SOT Package smd transistor marking PA smd diode marking sot-23 sot-23 marking PA marking CODE R SMD DIODE
Contextual Info: PRODUCT announcement Low Leakage Diodes in SOT-23, SOD-323, SOD-523 and SOT-563 packages SOT-23 SOD-323 SOD-523 SOT-563 features • Low Leakage: 1.0nA max. • VRRM: 200 Volts • Available in four space saving SMD packages Sample devices are available description

Si1912EDH

Contextual Info: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated

SM305

Contextual Info: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)

IRF5800

Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Contextual Info: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRF5802

Contextual Info: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V

gblc

Abstract: Ethernet Control
Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY DESCRIPTION The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY DESCRIPTION The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

zener smd marking 2x

Abstract: 3H DIODE smd smd diode marking 2J smd 27 3e diode sod323 diode marking code 2E 1Z 116 MM3Z10 MM3Z11 MM3Z12 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

GBLC03C

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

GBLC12C

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

diode marking r14

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

GBLC03

Abstract: GBLC03C GBLC05 GBLC05C GBLC08 GBLC08C GBLC12 GBLC12C GBLC24C
Contextual Info: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.

smd diode marking 2J

Abstract: 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

3H DIODE smd

Abstract: 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

smd zener diode code 2J

Abstract: Zener diode smd marking code 2A sod323 diode marking code 2E 3H DIODE smd smd diode marking 2J smd diode sod-323 marking code 2j ZENER 2V7 diode smd 3H DIODE SMD CODE MARKING 1e diode zener 8v2
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

STMicroelectronics supressor

Abstract: SMTY18AM
Contextual Info: SMTY18AM LOW FORWARD VOLTAGE TVS: Transky FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High peak pulse power: 400W 8/20µs Stand-off voltage 16V Low forward voltage: 0.48V @ 0.85A @ 25°C Low clamping factor VCL/VBR A K Fast response time Very thin package (1.0mm overall component

STMicroelectronics supressor

Abstract: DO216AA
Contextual Info: SMTY18AM LOW FORWARD VOLTAGE TVS: Transky FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High peak pulse power: 400W 8/20µs Stand-off voltage 16V Low forward voltage: 0.48V @ 0.85A @ 25°C Low clamping factor VCL/VBR A K Fast response time Very thin package (1.0mm overall component

Contextual Info: SMTY18AM LOW FORWARD VOLTAGE TVS: Transky FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High peak pulse power: 400W 8/20µs Stand-off voltage 16V Low forward voltage: 0.48V @ 0.85A @ 25°C Low clamping factor VCL/VBR A K Fast response time Very thin package (1.0mm overall component

ir3c

Abstract: 30BQ015 30BQ015TR AN-994 SMC MARKING mj
Contextual Info: Bulletin PD-2.490 rev. E 02/02 30BQ015 3 Amp SCHOTTKY RECTIFIER SMC Description/Features Major Ratings and Characteristics Characteristics 30BQ015 Units IF AV Rectangular waveform 3.0 A VRRM 15 V IFSM @ t p= 5 µs sine 650 A VF @ 1.0Apk, TJ = 75°C 0.30 V

Contextual Info: PD-91902 International IO R Rectifier SMPS MosFET IR F 7 3 0 A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SM PS Uninterruptable Power Supply High speed pow er switching V dss 400V Rds(on) max Id 1.0i2 5.5A Benefits • Low Gate Charge Qg results in Simple

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FK8V0303 Silicon N-channel MOS FET For DC-DC Converter circuits • Overview  Package FK8V0303 is N-channel single type small signal MOS FET adopted small size surface mounting package. 

marking 2U 58 diode

Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Contextual Info: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz