MARKING CODE 21E SOT23 Search Results

MARKING CODE 21E SOT23

Contextual Info: BF775 NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF775 Marking LOs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter

MARKING CODE 21E SOT23

Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF770A Marking LSs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings

MARKING CODE 21E SOT23

Contextual Info: BF771 NPN Silicon RF Transistor • For modulators and amplifiers 2 3 in TV and VCR tuners 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF771 Marking RBs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter

BCW66

Abstract: BFS17P E6327 marking code MCs
Contextual Info: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFR183

Abstract: BCW66
Contextual Info: BFR183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFT91

Abstract: BFR92p application note marking GFs BCW66 BFR92P E 94733
Contextual Info: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 2 3 from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

transistor marking R2s

Abstract: marking code R2S sot23 equivalent transistor of bfr93a marking R2s MARKING CODE 21E SOT23 marking code R2s BFR93A Infineon Technologies transistor 4 ghz R2S sot23 BCW66
Contextual Info: BFR93A NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

SOT23 NE

Abstract: BCW66 BFR181W BFR181W foot print
Contextual Info: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

MARKING CODE 21E SOT23

Abstract: bcw60 bcx70
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 2 3 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP Type Marking

BFR181

Abstract: 87757 BCW66
Contextual Info: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

1 R 4254

Abstract: BFR182 BCW66 infineon marking code L2
Contextual Info: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

bfr106

Abstract: BCW66 marking code FA sot23 12652
Contextual Info: BFR106 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers • For linear broadband amplifiers 2 3 • Special application: antenna amplifiers 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

DEVICE MARKING CODE AAs

Abstract: MARKING CODE 21E SOT23 marking code AJs
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration

MARKING CODE 21E SOT23

Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP 2 1 Type Marking

BCW60

Abstract: BCW61 BCW61A BCW61B BCW61C BCW61D BCX70 BCX71 BCX71G BCX71H
Contextual Info: BCW61., BCX71. PNP Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free (RoHS compliant) package 1)

BCW66

Abstract: BFR35AP MARKING CODE 21E SOT23
Contextual Info: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking GEs Pin Configuration

marking ABs

Abstract: marking AGs sot23 bcw60
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP • Pb-free (RoHS compliant) package

BF771 Infineon

Abstract: BCW66 BF771 RBS INFINEON
Contextual Info: BF771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF771 Marking

BCW66

Abstract: BF775
Contextual Info: BF775 NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners • Pb-free RoHS compliant package 1) 2 3 • Qualified according AEC Q101 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF775 Marking

BCW60

Abstract: BCW 90 BCW60B BCW60C BCW60D BCW60FF BCW61 BCX70 BCX70G BCX70H
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP • Pb-free (RoHS compliant) package 1)

Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type

BCW66

Abstract: BFR35AP
Contextual Info: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!