MARKING CODE 21E SOT23 Search Results

MARKING CODE 21E SOT23

Contextual Info: BF775 NPN Silicon RF Transistor • Especially suitable for TV-Sat and UHF tuners 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF775 Marking LOs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter

MARKING CODE 21E SOT23

Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF770A Marking LSs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings

BCW66

Abstract: BFS17P E6327 marking code MCs
Contextual Info: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFR183

Abstract: BCW66
Contextual Info: BFR183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFT91

Abstract: BFR92p application note marking GFs BCW66 BFR92P E 94733
Contextual Info: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 2 3 from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

BFR181

Abstract: 87757 BCW66
Contextual Info: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

1 R 4254

Abstract: BFR182 BCW66 infineon marking code L2
Contextual Info: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

BCW60

Abstract: BCW 90 BCW60B BCW60C BCW60D BCW60FF BCW61 BCX70 BCX70G BCX70H
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP • Pb-free (RoHS compliant) package 1)

Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type

BCW66

Abstract: BFR35AP
Contextual Info: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Infineon Technologies transistor 4 ghz

Abstract: BCW66 BF770A
Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type

Contextual Info: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 2 3 amplifiers in antenna and telecommunications systems up to 1.5 GHz 1 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFT91

Abstract: BCW66 BFR92P BFR92P equivalent E 94733
Contextual Info: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and 2 3 fast non-saturated switches at collector currents from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B

E 94733

Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFR181W

Abstract: BCW66
Contextual Info: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

87757

Abstract: BFR181 BCW66
Contextual Info: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

S1A MARKING CODE

Abstract: marking code S1A sot23 H12E
Contextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or