MARKING CODE 1AY Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

marking 1af

Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

marking CODE 1BS

Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

marking code 1BL Diode

Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

marking code 1BL Diode

Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

smb8j28

Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking code 1BL Diode

Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking code 1AW

Abstract: marking code 1ay
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9101, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge.     These devices are particularly suited for low voltage power management, such as smart

mosfet 1ak

Abstract: SMB8J17CA SMB8J14C marking 1AD JESD22-B102 J-STD-002 SMB10 SMB10J15 SMB8J40CA SMB10J16A
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

SPP2301A

Abstract: SPP2301AS23RG P-CHANNEL
Contextual Info: SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

mosfet sot353

Abstract: p-channel mosfet sot-353 he Inverter P-Channel 1.8V MOSFET SPP1413A SPP1413AS35RG marking nc sot-353 sot-353 marking code
Contextual Info: SPP1413A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP1413A

Abstract: SPP1413AS35RG marking nc sot-353 mosfet sot353
Contextual Info: SPP1413A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SOD-353

Abstract: mosfet sot353 ST1413AC 130m-ohm P channel MOSFET 1A
Contextual Info: P Channel Enhancement Mode MOSFET ST1413AC -3.4A DESCRIPTION The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

marking code 1AW

Abstract: SMB10J6.0 marking code 1ay marking code 1bx marking code 1AM SMB-10 SMB8J11C
Contextual Info: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional polarity only

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: Tantalum Electrolytic Capacitors Surface Mount Type Series TEH Series TEH Features • ■ ■ ■ Highly reliable surface mount type Moisture resistance: 1000 hours at 9 0 -9 5 %RH, +60 °C Excellent frequency & temperature characteristics High solderability: new solder coverage ^95 %

i6091

Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTIO N A Change Vj^. Change propagation delay times. limits from propagation delays. format. APPRO VED 1986 JUL 01 Delete minimum Convert to military drawing 1986 OCT 01 B Change power dissipation. C Add vendor CAGE 27014. Change code identification

1AX475R

Abstract: MARKING 1ED
Contextual Info: Panasonic Tantalim S o M E fe c to ]ytic Capacitors/ÏEH Surface Mount Type Tantalum Solid Electrolytic Capacitors S eries: T yp e : TEH T H igh reliab ility Surface mount type • Features • • • H ig h m o is tu re re s is ta n c e a t + 6 0 °C, 9 0 to 95 % R.H

mp0p07

Abstract: QPL-M38510 0P07AZ 07933 0p07J 0P07AJ OP-07 0P-07A "Micro Power Systems" - 1983 MP0P
Contextual Info: REVISIONS DESCRIPTION B Change to military drawing format. Add case outline 2. Inactivate G and P case outlines for device types 01 and 02 for new design. Delete vendor CAGE 34371. Editorial changes throughout. 1987 JULY 24 Add three vendors, CAGE 07933, CAGE 64155, and CAGE 54186.