MARKING CODE "S3" DIODE Search Results

Marking Code "s3" diode

Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

MARKING ta y sod-323

Abstract: 1N914BWS 1N4148WS
Contextual Info: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted

S3 DIODE schottky

Abstract: S3 marking DIODE Marking s3 Schottky barrier SDB110Q Marking Code s3 diode
Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1

b631 transistor

Abstract: S3 marking DIODE b631 Q62702-B631
Contextual Info: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23

A2 DIODE SMD CODE MARKING

Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Contextual Info: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSER4148 RoHS Device High Speed Features 0503(1308) Designed for mounting on small surface. 0.053(1.35) 0.045(1.15) Extremely thin/leadless package. High mounting capability, strong surge withstand, high reliability.

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSQR4148-HF RoHS Device High Speed Features 0402(1005) Halogen free. 0.041(1.05) 0.037(0.95) Designed for mounting on small surface. Extremely thin/leadless package. 0.026(0.65) 0.022(0.55) High mounting capability, strong surge

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSQR4148 RoHS Device High Speed Features 0402(1005) Designed for mounting on small surface. 0.041(1.05) 0.037(0.95) Extremely thin/leadless package. High mounting capability, strong surge withstand, high reliability.

1N9148

Abstract: S3 marking DIODE marking code s1 SMD diode SOD-323F D10 SMD CODE MARKING smd diode S2 smd diode sod-323 marking code 500 1N4148WS Marking Code s3 diode smd diode code s3
Contextual Info: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate

schottky diode sod-123 marking code 120

Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Marking Code s3 diode

Contextual Info: PRELIMINARY SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance

"MARKING CODE S1"

Contextual Info: ADVANCE INFORMATION SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance

Contextual Info: ADVANCE INFORMATION SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-small Surface Mount Package

S3A-13-F

Abstract: S3AB-13-F marking S3MB
Contextual Info: SPICE MODELS: S3A S3B S3D S3G S3K S3M S3AB S3BB S3DB S3GB S3KB S3MB S3A/B - S3M/B 3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 100A Peak

S3 marking DIODE

Abstract: diode marking code 7 marking code Sk transistors J-STD-020A SD101AW SD101AW-7 SD101BW SD101CW
Contextual Info: SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance SOD-123 Mechanical Data · · · · · · · ·

MBR130T1G

Abstract: MBR130T3G
Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

DS1101

Abstract: marking code Sk transistors SD101AW SD101BW SD101CW marking code sk DIODE
Contextual Info: SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance Lead Free/RoHS Compliant Note 3 SOD-123

S3 marking DIODE

Abstract: marking code Sk transistors J-STD-020A SD101AWS SD101AWS-7 SD101BWS SD101BWS-7 SD101CWS sod-323 diode MARKING CODE 4
Contextual Info: SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODELS: SD101AWS SD101BWS SD101CWS Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package

DS1101

Abstract: S3 marking DIODE J-STD-020A SD101AW SD101BW SD101CW SD101CW-7-F marking code sk DIODE
Contextual Info: SPICE MODELS: SD101AW SD101BW SD101CW SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance SOD-123 Mechanical Data

marking code s5 SOT23-6

Abstract: BAS70WT marking S5 sot363 KL8 SOT-23
Contextual Info: TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Peak Reverse Voltage Maximum Reverse Current PRV VR IR V V mA Maximum Forward Voltage Drop VF @ IF mV VF @ IF mA Surge Current Capacitance IFSM CTOT Marking Code Package Pin Identity

Diode SOd-123 marking cu

Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time E D SOD-123 Mechanical Data • • • • • • A B Case: SOD-123, Plastic