MARKING C73 Search Results

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

transistor a564

Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

106 16k

Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

DEA161990LT-1182

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 PCS/Tx & Rx喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA161990LT-1182 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min.

DEA165725LT-1196A2

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 5GHz W-LAN喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA165725LT-1196A2 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min.

DEA160915LT-1169

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 AGSM-EGSM/Tx喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA160915LT-1169 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min. Dimensions in mm

DEA161910LT-1170

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 DCS/PCS喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA161910LT-1170 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min. Dimensions in mm

DEA160770LT-5018A1

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 DVB-H/ISDB-T喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA160770LT-5018A1 侘彜・樫雁 Marking 0.5max. 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min. Dimensions in mm

DEA160770LT-5008B1

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 DVB-H/ISDB-T喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA160770LT-5008B1 侘彜・樫雁 Marking 0.5±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min. Dimensions in mm

DEA160915LT-1156

Abstract: GSM900
Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 GSM900喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA160915LT-1156 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 1.6±0.15 0.5±0.1 0.2±0.1 0.8±0.1 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.2min. Dimensions in mm

2640MHz

Abstract: DEA160915LT-1160 GSM900 DEA160915LT
Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 GSM900喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA160915LT-1160 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 1.6±0.15 0.5±0.1 0.2±0.1 0.8±0.1 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.2min. Dimensions in mm

DEA165850LT-1197B2

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 5GHz W-LAN喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA165850LT-1197B2 侘彜・樫雁 Marking 1 3 0.15min. 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.8±0.1 0.8±0.1 2 0.2min. Dimensions in mm

DEA161785LT-1158

Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 DCS喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA161785LT-1158 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.8±0.1 1.6±0.15 0.5±0.1 0.2±0.1 0.2min. Dimensions in mm

DEA161990LT-1180A1

Abstract: 321-DB
Contextual Info: 1/2 持蚊薮頭詰宥陀襖匂 GSM， DCS， PCS/Tx & Rx喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA161990LT-1180A1 侘彜・樫雁 Marking 0.8±0.1 1 0.8±0.1 2 3 0.15min. 4 Terminal functions 1 IN(OUT) 2 GND 3 OUT(IN) 4 GND 0.8±0.1 1.6±0.15 0.5±0.1

BB0P10

Abstract: MTBB0P10J3
Contextual Info: Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -10A RDSON MAX 205mΩ Features • Low Gate Charge • Simple Drive Requirement

BA5N10

Abstract: MTBA5N10J3 TO-252 MOSFET p channel C731J3
Contextual Info: Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10J3 BVDSS 100V ID 10A RDSON MAX 150mΩ Features • Low Gate Charge • Simple Drive Requirement

C734

Abstract: IR 2638
Contextual Info: Spec. No. : C734J3 Issued Date : 2009.07.09 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB12P04J3 BVDSS -40V ID -25A RDSON MAX 12.6mΩ Features • Low Gate Charge • Simple Drive Requirement

B12N03

Abstract: MTB12N03Q8
Contextual Info: CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB12N03Q8 BVDSS ID RDSON max 30V 12A 11.5mΩ Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

go c73

Abstract: DIMD10A-7
Contextual Info: DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free By Design/RoHS Compliant Note 1

marking C73

Contextual Info: DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN SC-74R A CXX YM Mechanical Data · · · · · Case: SC-74R, Molded Plastic

marking code c73

Abstract: go c73
Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic

Contextual Info: DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN SC-74R A CXX YM Mechanical Data · · · · · Case: SC-74R, Molded Plastic

DIMD10A-7

Abstract: DIMD10A
Contextual Info: SPICE MODEL: DIMD10A DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00

go c73

Contextual Info: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic