MARKING C65 Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

n60c

Abstract: NA60 NA60 resistor Rn65d resistor na65 10 resistor NE55 RN60D N55D Resistors NC55 dale rn60c
Contextual Info: MODELS NE, NC, CT, NA Metal Film Resistors Military, MIL-R-10509, Qualified, Type RN, Precision FEATURES • Low noise and low inductance characteristics • Blue epoxy encapsulation over moisture resistant polyimide varnish undercoat • Special marking available

fultec

Abstract: C650-180-WH C650-100-WH month marking TBU C650 P40-G240-WH P850-G120-WH P850-U260-WH P850-G200-WH
Contextual Info: TRANSIENT BLOCKING UNITS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March, 2009 Change in Marking and Packaging Effective immediately, the Bourns TBU™ product families cited below are offered in tape-and-reel

fultec

Abstract: C650-180-WH P40-G240-WH P850-G120-WH
Contextual Info: TRANSIENT BLOCKING UNITS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March, 2009 Change in Marking and Packaging Effective immediately, the Bourns TBU™ product families cited below are offered in tape-and-reel

BTD2195M3

Contextual Info: CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2006.08.28 Page No. : 1/5 NPN Epitaxial Planar Transistor BTD2195M3 Description The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application.

A1210

Contextual Info: Spec. No. : C656F3 Issued Date : 2007.02.02 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

BTB1580M3

Abstract: sot89 bn sot-89 MARKING CODE BN
Contextual Info: CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2006.08.28 Page No. : 1/5 PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low

sot-223 code marking

Abstract: transistor npn 2A sot 23 BTD2195
Contextual Info: Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted.

C5103

Abstract: transistor C5103 semiconductor C5103 e semiconductor C5103 k c5103 C5103 e C5103 Transistor BTA1952I3 BTC5103 BTC5103I3
Contextual Info: CYStech Electronics Corp. High Speed Switching Transistor BVCEO IC RCESAT BTC5103I3 Features Spec. No. : C651I3 Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 60V 5A 110mΩ • Low VCE sat , VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A

CYStech Electronics

Abstract: sot-223 code marking BTP953L3
Contextual Info: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

D2195

Abstract: D219
Contextual Info: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2195J3 Description Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2009.02.04 Page No. : 1/6 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low

transistor c1510

Abstract: c1510 transistor c1510 C-1510 BTC1510I3 C652I3
Contextual Info: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510I3 Spec. No. : C652I3 Issued Date : 2005.06.23 Revised Date :2009.02.04 Page No. : 1/6 150V 10A 220mΩ Description The BTC1510I3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

A1640

Abstract: A1640 pnp transistor a1640 BTA1640I3
Contextual Info: Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640I3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A

to252 footprint wave soldering

Abstract: B1580
Contextual Info: Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTB1580J3 BVCEO IC RCESAT -120V -4A 600mΩ Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low

transistor c1510

Abstract: C1510 c1510 transistor C-1510 BTC1510J3
Contextual Info: CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTC1510J3 Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 150V 10A 220mΩ Description The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

A1640 pnp

Abstract: transistor a1640 A1640 bta1640j3
Contextual Info: Spec. No. : C657J3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640J3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A

MIL-STD-202f Method 103b

Abstract: NBK290502-E10480 NBK260202-E10480 SU05001-2015 F 10A H 250V fuse Thermal Fuse 125V 5A C6575 101D NBK010702-E10480 T 10A H 250V fuse
Contextual Info: Axial Lead and Cartridge Fuses Designed to METI Standard 5 x 20 mm Medium-Acting Fuse 232 Series • Designed to Japanese Standard JIS C6575. • Available in Cartridge, Axial and Radial Lead Format. • Available in ratings of 1A to 10A. • Improved I2 t

PT10m

Abstract: A1210 BTA1210J3
Contextual Info: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low

C650

Contextual Info: PL IA NT Features CO M • Formerly The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible

C650

Abstract: C650-180-WH C850 GR-1089 GR-974 c650-100
Contextual Info: PL IA NT Features CO M • Formerly The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible

C650-180-WH

Abstract: G5200AS Cx50-100-WH c650 diode fultec C650 C850 GR-1089 GR-974 TBU C650
Contextual Info: PL IA NT Features CO M • Formerly The C650 & C850 Series are currently available, but not recommended for new designs. Bourns TBU-CA Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible

Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 Overcurrent Protection Device PRODUCT: microSMD075F DOCUMENT: SCD 25267 PCN: C65102, RF0404 REV LETTER: D

RF0404

Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 Overcurrent Protection Device PRODUCT: microSMD075F DOCUMENT: SCD 25267 PCN: C65102, RF0404 REV LETTER: C

T63-C650X

Abstract: 900VV
Contextual Info: Surge Arrester 3-Electrode-Arrester T63-C650X Ordering code: B88069X6990B102 DC spark-over voltage 1 2) 4) 550 … 800 V Impulse spark-over voltage 4) at 100 V/µs - for 99 % of measured values - typical values of distribution < 900 < 800 V V < 1000 < 900