MARKING C2D Search Results

Contextual Info: Data Sheet Rev. 1.1 30.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: 200Pin SO-DIMM • SEN02G64T1BJ2WI-25R 2GB PC2-6400 in COB Technology RoHS compliant •     Options: DataRate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 Marking -25 -30 Module density

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

C2D05120

Abstract: High Voltage Multipliers TO-252-2 C2D05120E
Contextual Info: C2D05120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior

C2D20120

Abstract: D20120 C2D20120D
Contextual Info: C2D20120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

D 16027 G

Abstract: C2D10120 C2D10120D CSD10120
Contextual Info: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D05120E

Abstract: C2D05120 cree marking information
Contextual Info: C2D05120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior

C2D10120D

Abstract: C2D10120 BB 313 TO247-3
Contextual Info: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D05120

Abstract: C2D05120A
Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D10120A

Abstract: C2D10120
Contextual Info: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D05120E

Contextual Info: C2D05120E VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 8.5 A Rectifier Features 1200 V Qc = 28 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

C2D10120

Abstract: C2D10120A IN223
Contextual Info: C2D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

C2D10120D

Contextual Info: C2D10120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 18 A* Rectifier Features 1200 V Qc = 56 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

C2D05120A

Contextual Info: C2D05120A VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 8.5 A Rectifier Features 1200 V Qc = 28 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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