MARKING BV4 Search Results

BV45

Abstract: FLUORESCENT LAMPS CFLS marking 131-6 to92 STBV45 STBV45-AP 131-6 to92
Contextual Info: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code Marking Package / Shipment STBV45 BV45 TO-92 / Bulk STBV45-AP BV45 TO-92 • ■ ■ ■ / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

BV45

Abstract: marking 131-6 to92 STBV45 STBV45-AP FLUORESCENT LAMPS CFLS
Contextual Info: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Table 1: Order Codes Ordering Code Marking Package / Shipment STBV45 BV45 TO-92 / Bulk STBV45-AP BV45 TO-92 • ■ ■ ■ / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

dg1u

Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
Contextual Info: Control and signalling units Ø 22 mm fixing Type XB2-B, with chromium plated metal bezel Characteristics Environment Conforming to standards EN 947-5-1 Ambient air temperature Operation : - 25…+ 70 °C Degree of protection IP 65 : Double-headed pushbuttons : IP 40 (IP 65 with sealing boot ZB2-BW008)

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

sot-23 bv4

Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

Contextual Info: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1

telemecanique zb4

Abstract: Telemecanique zbv telemecanique pushbutton catalogue telemecanique pilot light catalogue xd2 joystick telemecanique telemecanique pushbutton zb2 zbe 101 telemecanique pushbutton telemecanique contactor catalogue telemecanique xb4 telemecanique ZBE 101
Contextual Info: Control and signalling units Ø 22 Harmony XB4, metal Harmony® XB5, plastic Catalogue june 06 Flexibility Ingenuity Simplicity b b b Interchangeable modular functions, to better meet the requirements for extensions b Software and accessories common to multiple product families

2SB624

Abstract: 2SD596
Contextual Info: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2

telemecanique cam switch XBC-D

Abstract: push button switch 4 pin telemecanique XACA rotary switch xbc-d telemecanique cam switch XBC telemecanique xb2 telemecanique 22mm XB4 / ZB4 TELEMECANIQUE xbcd telemecanique pushbutton emergency stop telemecanique pushbutton
Contextual Info: Push Buttons and Operator Interface Specifier’s Guide Catalog File 9001 2005 CONTENTS Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Page Type XB6 16 mm Push Buttons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

100uF 25V Electrolytic Capacitor

Abstract: electrical home wiring hb ax aerospace Capacitor 0.01 uF ax 2008 capacitor 1000 uf 25v CE CAPACITOR PANASONIC ups circuit 25V Electrolytic capacitor datasheet ammeter
Contextual Info: To: DIGI-KEY Issue No. : CE-VHBA4-CE-0 Date of Issue : August 20, 2007 Classification : New , Changed PRODUCT SPECIFICATION FOR APPROVAL Product Description Customer Part Number : Aluminum Electrolytic Capacitor : Product Part Number : V type HB series High. temp. Pb free reflow type

2SB624

Abstract: BV4 transistor marking BV4 transistor bv5
Contextual Info: 2SB624 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35

2SB624

Abstract: TRANSISTOR BV3 BV4 transistor
Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage

BV4 pnp

Abstract: BV4 transistor 2SB624 2SD596
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB624

Abstract: 2SD596 BV4 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

hFE-200 transistor PNP

Abstract: 2SB624
Contextual Info: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

hFE-200 transistor PNP

Abstract: TRANSISTOR BV3
Contextual Info: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

xb4bvb

Abstract: XB4-BS542 XB4BD XB4BL945 XB4BC21 ZB4-BVB XB4-BL945 ZB4-BV003 xB4-BV6 XB4-BA3311
Contextual Info: Control and signalling units Ø 22 Characteristics : pages 1/10 to 1/13 References : pages 1/14 to 1/53 Dimensions : pages 1/54 to 1/61 1 Description Harmony style 4 Pushbuttons, switches and pilot lights, with chromium plated metal bezel General The Ø 22, style 4 range of control and signalling units comprises :

Contextual Info: SILIC O N EPICAP DIODES MMBV409LT1* MV409* . . . designed fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. • High Q w ith Guaranteed M inim um Values at VHF Frequencies

MV409

Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MMBV409L MV409 Silicon Epicap Diodes . . . designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

Contextual Info: 2SB624 PNP Epitaxial Planar Transistors COLLECTOR SOT-23 3 3 P b Lead Pb -Free 1 BASE 1 2 2 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V