MARKING BSO 8 PIN Search Results

BSO 612 CV

Contextual Info: Rev. 2.1 BSO 612 CV G SIPMOS  Small-Signal-Transistor Product Summary Features • Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS on N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current

smd diode 615

Abstract: 615C
Contextual Info: Rev. 2.0 BSO 615 C G SIPMOS  Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS · Drain-Source on-state Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V

Contextual Info: Rev. 2.1 BSO 612 CV G SIPMOS  Small-Signal-Transistor Product Summary Features • Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS on N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current

612CV

Abstract: CV 625 K 20 marking bso 8 pin
Contextual Info: Rev. 2.0 BSO 612 CV G SIPMOS  Small-Signal-Transistor Product Summary Features • Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS on N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current

Contextual Info: Rev. 2.1 BSO 615 C G SIPMOS  Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS · Drain-Source on-state Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V

615c

Contextual Info: Rev. 2.1 BSO 615 C G SIPMOS  Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS · Drain-Source on-state Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V

marking code SJ

Abstract: 536751-5 MARKING "SJ 29" T2T MARKING marking sj marking code SJ 00779 SJ 96 AMP D-3
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 REVISIONS LTR M 53.34[2.1 00] HOUSING MAX POST — 44. 65 [ 1 .758]0.94+0.05 TYP [.037+.002] - .095 0 .1 + .0 0 3

DB1-822

Abstract: BF1012
Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627

3d plus

Abstract: CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking
Contextual Info: PRELIMINARY 1.28 Gbit SDRAM ELECTRONICS 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package Features General Description Organized as 40M x 32-bit. Single +3.3V ±0.3V power supply Two stacks of ten 64 MBit SDRAM mounted on ceramic hermetic package

C3521

Contextual Info: DO NOT SCALE DIMENSIONS - -2 2 . 0 M A X . - - M M El R C IN m m - -PROJECTION NCp/ NOTES: SECTION -5 x 4 ,0 = 20,0• 0 ,9 5 MAX. A A -A CONTACT AREA: 0,76/^m Au MIN. OVER 1,27/zm ACTION — PIN AREA 4 ,0 -

Contextual Info: n r COPYRIGHT BT TRP CONNECTOR ALL RIGHTS RESERVED. E A MECHANICAL: A & 23APR2013 LOGO CHANGE JC KZ M ATERIALS: HOUSING - THERM OPLASTIC PET P O LY E ST E R FLAM M ABILITY RATING UL 9 4 V -0 . SHIELD - .010" THICK, C26800 B R A S S P R EPLA T ED WITH 30jxlnch MIN SEMI-BRIGHT

Contextual Info: Filter connectors Solder pin straight high density with threaded insert Socket connector Plug connector Kai 1 i P2A Kat 1 i P3A A -0,76 B+0,25 15 31,19 16.79 25,00 33,30 26 39,52 25,12 33,30 '.%•$ 6,12 38,50 47,04 1013 44 53,42 38,84 47,04 - °'13 5,99

10L42

Abstract: 1605 B iw16
Contextual Info: * SY10L422-5/7 SY100L422-5/7 SY101 L422-5/7 LOW-POWER 256 x 4 EC L RAM SYNERGY SEMICONDUCTOR FEA TU RES D ESC RIPT IO N The Synergy SY10LV100L/101L422 are 1024-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized

avasem

Contextual Info: AV9140 Integrated Circuit Systems, Inc. R4000 Frequency Generator Features Pin Configuration Ideally suited for R4000 family clock source Meets high and low time specifications Uses inexpensive 14.318 MHz reference crystal Selectable 50, 75 or 100 MHz output frequency

Contextual Info: * SY10L422-4/5/7 SY100L422-4/5/7 SY101L422-4/5/7 LOW POWER 256 x 4 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The Synergy SY10L/100L/101L422 are low-power versions of Synergy's ultra-high-speed 1,024-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: PART NUMBER SELECTION TABLES IDU 1.5 N IDU 1.5 N/3AN I DU 1.5 N/4AN IDK 1.5 N/V Single Level Branch Branch Branch Feed Through Terminals Top Entry Available Options Version Beige/Beige Wemid ATEX certified -tt ^ Blue/Beige Wemid (ATEX certified)^ Type

marking G2s

Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S

marking code g2s

Contextual Info: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking jls

Abstract: marking code g1s
Contextual Info: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: r n THIS bftAiwt IS UWWJ&USHKT- RELEASED FM WSUtAWN / COPYiaOHT - _ BY TYCO ELECTROMCS COgPORATIOH. WST ~ALL RIGHTS RESERVED. M R E V IS IO N S 22 B MECHANICAL: A \ A - . 1 0 0 TYP \ / 4. A ELECTRICAL: 426 SERIES MAGNETIC CIRCUIT Q OH MATERIALS: MOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0 .

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

Contextual Info: PRODUCT NU M BER SEE TABLE REVISIONS SH EET IN D E X EC N / D D R # 7 /1 9 /9 1 8 /3 /9 4 2 /1 /9 5 2 /2 2 /9 5 1 0 /1 /9 6 TOLERANCES UNLESS OTHERWISE SPECIFIED NO PART E L E CTR O N I CS TOT MÄT 2 /1 8 /9 1 riNISH •QOi .01 /.0 ± .3 PRODUCT FAMILY ■0QQÌ.0Q5/.Q01.13

1N4001

Abstract: LT1030 LT1030C LT1030CS BM 109
Contextual Info: r j i infad TECHNOLOGY Quad Low Power Line Driver F€ATUR€S DCSCftlPTIOn • ■ ■ ■ ■ ■ ■ ■ The LT1030 is an RS232 line driver that operates over a ± 5V to ± 15V range on low supply current and can be shut down to zero supply current. Outputs are fully protected

Contextual Info: L T L i n ü t LT1004CS8-1.2/ _ LT1004CS8-2.5 ë TECHNOLOGY Micropower Voltage References DCSCRIPTIOn F€flTUR€S • Guaranteed ±4mV initial accuracy LT1004-1.2 ■ Guaranteed ± 20mV accuracy LT1004-2.5 ■ Guaranteed 10/uA operating current