MARKING BR SOT23 Search Results

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

sot-23 marking 7z

Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Contextual Info: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1

marking BS sot23

Abstract: marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

marking BS SOT23

Abstract: marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf
Contextual Info: 2SC2412 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

Contextual Info: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features — Low Cob ,Cob = 2.0 pF (Typ). — Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

tn2460

Abstract: TN2460T
Contextual Info: HSffSi TN2460 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS TN2460L 240 TN2460T 240 "W1 >D (mA) PACKAGE 60 76 TO-92 60 51 SOT-23 Performance Curves: VNDN24 J¥ PRODUCT MARKING TN2460T TQ3 TO-92 (TO-226AA) BOTTOM VIEW

2SC2412K

Abstract: 2SA1037AK
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC2412K SOT-23-3L TRANSISTOR NPN FEATURES z Low Cob ,Cob = 2.0 pF (Typ). z Complements the 2SA1037AK 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

itt 2222a

Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Contextual Info: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

marking D76

Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D

r31a

Contextual Info: REF3112 REF3120 REF3125 REF3130 REF3133 REF3140 SBVS046C – DECEMBER 2003 – REVISED FEBRUARY 2006 15ppm/°C Max, 100µA, SOT23-3 SERIES VOLTAGE REFERENCE FEATURES DESCRIPTION ● MicroSIZE PACKAGE: SOT23-3 The REF31xx is a family of precision, low power, low dropout,

Contextual Info: REF3212, REF3220 REF3225, REF3230 REF3233, REF3240 SBVS058C – JUNE 2005 – REVISED AUGUST 2011 www.ti.com 4ppm/°C, 100 A, SOT23-6 SERIES VOLTAGE REFERENCE Check for Samples: REF3212, REF3220, REF3225, REF3230, REF3233, REF3240 FEATURES DESCRIPTION •

smd transistor t6

Abstract: SMD TRANSISTOR MARKING BR BSS63R t6 marking sot23
Contextual Info: Transistors SMD Type High Voltage Transistor BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: SMD Type SMD Type Product specification BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: TLV62565 TLV62566 www.ti.com SLVSCB7 – OCTOBER 2013 1.5-A High Efficiency Step-Down Converter in SOT23-5 Package Check for Samples: TLV62565, TLV62566 FEATURES DESCRIPTION • • • • • • • • • • • • • • • The TLV62565/6 devices are synchronous step-down

FMMT417

Abstract: 417 TRANSISTOR SMD TRANSISTOR MARKING BR
Contextual Info: Transistors SMD Type Avalanche Transistor FMMT417 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

marking 415 sot23

Abstract: FMMT415
Contextual Info: Transistors SMD Type Avalanche Transistor FMMT415 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

FMMT415

Contextual Info: Transistors IC SMD Type Product specification FMMT415 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: Transistors IC SMD Type Product specification FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1