MARKING BQ SC59 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel

2PD601A

Contextual Info: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

sc59

Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q
Contextual Info: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59

2PB601A

Abstract: 2PB601 Marking BQ SC59
Contextual Info: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081XT1G FEATURE ƽLow Cob,Cob=2pF Typ. . ƽEpitaxial planar type. 3 ƽPNP complement:L2SA1576A ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking

transistor 2SA1037K

Abstract: transistor 2sc2412k 2SA1037K 2SC2412K
Contextual Info: 2SC2412K NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES SC-59 A n Low Cob. n Cob=2.0pF n Compements the 2SA1037K n RoHS Compliant Product L S 2 3 Top View B 1 D STRUCTURE G n n Expitaxial planar type

T346

Abstract: 2P transistor
Contextual Info: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification.

2PB709R

Abstract: 2PB709AQ 2PD601A 2PB709 2PB709A 2PB709AR 2PB709AS 2PB709Q 2PB709S 2PD601
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors 2PB709; 2PB709A FEATURES • High DC current gain • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general purpose switching and amplification.

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

2SC2411KR

Abstract: MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124
Contextual Info: SC-59 BIPOLAR TRANSISTORS NPN TRANSISTORS The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Type Function 2SC2411KP amplifier 2SC2411KQ amplifier 2SC2411KR amplifier 2SC2412KQ general purpose

2PD601A

Contextual Info: bbsa^ai oosbGMT Philips Semiconductors » apx PNP general purpose transistor 2PB709; 2PB709A N ANER PHILIPS/DISCRETE FEATURES Objective specification b?E ]> PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. c DESCRIPTION

sd241 equivalent

Abstract: marking 3178 SO-8 amp
Contextual Info: MOTOROLA MBR3045CT SD241 • SEMICONDUCTOR TECHNICAL DATA MBR3045CT and SD241 are Motorola Preferred Devices SCHOTTKY BARRIER RECTIFIERS Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art

marking u3j

Abstract: SOT223 6 pin smb marking U3j marking 0f sot143 244 u3d ae SMC MARKING motorola dpak top marking 360 u3j
Contextual Info: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MURS320T3 MURS360T3 Su rface M ou n t U ltrafast Pow er Rectifiers Motorola Pi«ferrad DevtcM . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes,

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistors 2SB0709A 2SB709A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25

1N5831

Abstract: E5 sot223 1N5829
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

2pb601a

Abstract: 2PB601 2PB709A 2PB709AQ 2PB709AR 2PB709AS Marking BQ SC59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PB709A PNP general purpose transistor Product data sheet Supersedes data of 1997 Jun 19 1999 Apr 23 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709A FEATURES PINNING • Low current max. 100 mA

1N6095

Contextual Info: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

3148b

Contextual Info: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.