MARKING BL SC59 Search Results

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

Shipping Tray

Abstract: EPAK TRAY MSA-3032 ePAK tray drawing BG3535 tray 10 x 24 BD132 B200
Contextual Info: REVISIONS REV 00 M anufacturlng S ite Marking "T ext p ro tru sio n 0,15max 322.6±0.5<L>-315,0±0,5 A>^- DESCRIPTION INITIAL RELEASE DATE APPROVED KK Thee 0 3 /0 8 /1 0 4-ND HEILES (VACUUM PICKUP CELL HL Ç— ) •C — )

Contextual Info: RN1410,RN1411 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1410, RN1411 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5 — 0.3 + 0.25 1 . 5 - 0.15 With Built-in Bias Resistors Simplify Circuit Design

2SA1163

Contextual Info: 2SA1163 SILICON PNP EPITAXIAL TYPE Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : VQgQ = —120V Excellent hjrg Linearity : hpE Ic= —0.1mA /hFE (IC = —2mA) = 0.95 (Typ.) High hp~E ; hFE = 200~700 Low Noise : NF = ldB (Typ.), lOdB (Max.)

Contextual Info: 2SC3324 S ILIC O N NPN E P IT A X IA L T Y P E AU D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. U nit in mm High Voltage : V c e o = 120V + 0.5 2 3 - 0.3 Excellent hpE Linearity : hyE le = 0.1mA / hpE (Iç = 2mA) = 0.95 (Typ.) High hpE Low Noise + 0.25

1223N

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2712 U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0 .5 8.5 - a i • High Voltage and High Current • Excellent hpE Linearity • High hj"E : hj'E = 70~700 • Low Noise : NF = ldB Typ. , lOdB (Max.)

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

2SK711

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.)

marking CJD

Contextual Info: 2SC2712 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 7 12 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • + 0.5 2 .5 - t t 3 High Voltage and High Current : V0 EO = 5OV, 1(3 = 150mA (Max.) Excellent hpg Linearity

2SC2712

Abstract: 2SA1162
Contextual Info: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

Cbg MARKING TRANSISTOR

Abstract: TRANSISTOR CBG 2SA1312 2SC3324
Contextual Info: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V ç e O = 120V Excellent hpE Linearity hFE dC = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.) High hpE

BL1020

Abstract: 2SK711
Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)

2SA1163

Abstract: 2Sc2713
Contextual Info: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.) ·

2sc3324

Abstract: marking CB
Contextual Info: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS W ÊF mm mm Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V c e O = 120V Excellent hp^ Linearity : hFE dC = 0,1mA) / hFE (IC = 2mA) = 0,95 (Typ.) High hjrg

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

2SA1312

Abstract: 2SC3324
Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) · High hFE: hFE = 200~700

2SC2712

Abstract: 2SA1162
Contextual Info: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS W ÊF Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V c e O = 50V, Ic = 150mA (Max.) Excellent hpE Linearity ; hFE dC = 0.1m A )/hrE (IC = 2mA) =0.95 (Typ.)

2SA1163

Abstract: 2SC2713 A1163 XL05
Contextual Info: TOSHIBA 2SA1163 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 163 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : + 0.5 2 .5 - 0 .3 V^EO = - 120V Excellent Linearity : hFE (le = -0.1mA) / hFE (ÏC = -2mA) = 0.95 (Typ.)

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)

2SA1163

Contextual Info: 2SA1163 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 1 6 3 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o —_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.)

2SA1162

Abstract: 2SC2712 transistor toshiba marking hf Marking BL SC59
Contextual Info: 2SC2712 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • • • High Voltage and High Current : V ç;e O - 50V, 1(2 —150mA (Max.) Excellent hjpg Linearity