MARKING BG3 Search Results

Contextual Info: SIEMENS BAS 28 Silicon Switching Diode Array • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * o Package1) SOT-143 NJ - È H- «1 3 2 0- N - 0

Shipping Tray

Abstract: EPAK TRAY MSA-3032 ePAK tray drawing BG3535 tray 10 x 24 BD132 B200
Contextual Info: REVISIONS REV 00 M anufacturlng S ite Marking "T ext p ro tru sio n 0,15max 322.6±0.5<L>-315,0±0,5 A>^- DESCRIPTION INITIAL RELEASE DATE APPROVED KK Thee 0 3 /0 8 /1 0 4-ND HEILES (VACUUM PICKUP CELL HL Ç— ) •C — )

BCR108S

Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Contextual Info: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

marking K1 sot363

Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

G2 marking

Abstract: BG3140R
Contextual Info: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance

BCR108S

Abstract: BG3230 mosfet 2g2
Contextual Info: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

Contextual Info: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

BCR108S

Abstract: BG3130 BG3130R 3D SOT363 marking K1 sot363
Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes

KDS DATE CODE

Contextual Info: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance

Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

BCR108S

Abstract: BG3130 BG3130R
Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

Marking G2

Abstract: BCR108S BG3430R
Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes

BG3430R

Abstract: Marking G2 BCR108S
Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range

marking code g1s

Abstract: BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp
Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

AGC-10

Abstract: BCR108S BG3123 BG3123R
Contextual Info: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

Contextual Info: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes

Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain

22100K

Contextual Info: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance

Contextual Info: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain

BG3230

Abstract: BG3230R VPS05604
Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

BG3140

Abstract: BG3140R VPS05604
Contextual Info: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance

BG3130

Abstract: BG3130R VPS05604 3D SOT363
Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain