MARKING ALF Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

MMBT5551A

Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION

MMBT5401

Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L

2SC3647

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES „ * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs

TA4008F

Abstract: s22p
Contextual Info: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current l x =9mA (Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND E VCC = 2.7~3.3V MARKING

2SC3647

Abstract: 2SC3647-AB3-R 2SC3647L-AB3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density,

Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

QW-R206-081

Abstract: marking C5 2SA1774 2SC4617 2SC4617L-AE3-R 2SC4617-AE3-R hFE is transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES 2 * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 3 MARKING C5 SOT-23 *Pb-free plating product number: 2SC4617L PIN CONFIGURATION PIN NO. PIN NAME

B340C

Abstract: Diode IR 1254 B340 B340T-02
Contextual Info: SCS-1254 SPECIAL CUSTOMER PARTS SPECIFICATION SHEET 1. Part information Part Number: Description: Outline: Marking: Package: B340T-02 Special PD, RθJL, RθJA , Mechanical Dimensions SMC B340+Cathode Band+DII Logo+Date Code Tape/Reel Issue date: Series No.:

JR MARKING

Contextual Info: IMBD4448 Silicon Epitaxial Planar Diode Fast switching diode in case SOT-23, especially suited for automatic insertion. Top View Marking A3 Top View m SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in mm oo" Absolute M aximum Ratings Symbol Value

he 8050s

Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
Contextual Info: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL

Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

C8550S

Abstract: 8550S 8550SL transistor marking B9
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 3 SOT-23 MARKING *Pb-free plating product number: 8550SL

Contextual Info: S IE M E N S BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=10k£2, R2=47K£i Marking Ordering Code Pin Configuration BCR 135W WJs Q62702-C2287 1 =B Package LU II OJ Type

USB cable AWM 2725 vw-1

Abstract: awm 2725 vw-1 USB cable AWM 2725 awm style 2725 VW-1 AWM VW-1 30V awm 2725 VW 2725 AWM VW- 30V awm 2725 30v awm style 2725 80 maxxtro usb cable
Contextual Info: IT 7 L O P1 3 w m . £ P2 D D PIN OUT NOTES: MATERIALS 1.1 CABLE: [ 7/0.12 BC * 1PAIR + (7/0.2 BC) * 2C], AL-FOIL AND BRAID (48/0.12 ALM) SHIELDED, GREY PVC JACKET. CABLE MARKING: Maxxtro AWM STYLE 2725 80*0 30V VW-1 USB2.0 CABLE 1.2 CONNECTOR: P1: USB A TYPE MALE: GOLD FLASH

Contextual Info: SCHOTTKY BARRIER DIODE 0.5A/30V EP05Q03L FEATURES OJEDEC SOD-123 Package OVery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ ^ M onth of Mfg. A = Jan . B = F e b .-L = D e c . Y e a r of Mfg. 7=1997

Contextual Info: TOSHIBA TA4101F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T 4 A 1 1 SILICON MONOLITHIC F UHF VHF M IX APPLICATION FEATURES • Double Balance circuit PIN ASSIGNMENT TOP VIEW MARKING 8 7 6 5 n n n n 8 7 6 5 n n n n TYPE N A M E I/ " LOT No. 4101F / / •

S3V 05

Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3

MDL2416

Contextual Info: MDL2416C MDL2416TXVB SIEMENS .15" Red, 4-Digit, 16 Segment Plus Decimal HI-REL Alphanumeric Intelligent Display With Memory/Decoder/Driver P a c k a g e D im e n sio n s in In ch e s m m a « r . - - r 1 Marking 2? 1 150 (3 81) * 19(4 03) 1 295 ± 003

tz 1034 210

Abstract: 02CZ27 02CZ12 zener diode 1282 tz 1034
Contextual Info: TOSHIBA 02CZ2.0-02CZ47 TOSHIBA ZENZER DIODE SILICON EPITAXIAL PLANAR TYPE Q2CZ2.Q~Q2CZ47 CONSTANT VOLTAGE REGULATION APPLICATIONS. U nit in mm Weight : 0.012g MARKING in 0071 # # # T O S H IB A is co n tin u ally w o rk in g to im prove the q u a lity and th e re lia b ility o f its products. N evertheless, se m icon d u ctor devices in ge n e ral can

smd marking code PH

Abstract: SMD MARKING CODE M 4 Diode smd diode marking code t3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB158 VHF variable capacitance diode Product specification Supersedes data of May 1996 1999 Jun 10 Philips Semiconductors Product specification VHF variable capacitance diode BB158 FEATURES • Excellent linearity

smd diode code pj

Abstract: Diode smd code PJ smd diode code pj 50 smd diode code pj 29 smd diode pj 55 smd marking code pJ smd diode code PJ 27 smd diode code pj 21 Diode type SMD marking PJ smd diode code pj 5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB159 UHF variable capacitance diode Product specification Supersedes data of 1996 May 03 1996 Oct 03 Philips Semiconductors Product specification UHF variable capacitance diode BB159 FEATURES • Excellent linearity

DIODE smd marking 821

Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology

smd diode PE

Abstract: "MARKING CODE PE" BB155
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB155 Low-voltage variable capacitance diode Product specification 1996 Sep 20 Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread